• 제목/요약/키워드: Light emitting diodes (LEDs)

검색결과 363건 처리시간 0.032초

Backlight for Large-area LCD-TVs using Light Emitting Diodes

  • Choi, Jong-Hyun;Chu, Haang-Rhym;Bang, Ju-Young;Park, Hee-Jeong;Hong, Hee-Jung;Lim, Moo-Jong;Oh, Eui-Yeol;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1153-1156
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    • 2005
  • A backlight for large-area LCD (Liquid Crystal Display)-TVs has been developed using Light Emitting Diodes (LEDs). Performances of the backlight and the methods driving the LEDs are introduced in this research. A spectral relationship between the LEDs and the color filters of a panel were investigated as well. In order to realize a CRT like dynamic effect, the area-focused luminance control (AFLC) technology was adopted in developing the backlight. Thus, a possibility of applying the LEDs to the backlight for large-area LCD-TVs was systematically proved.

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Differences in Design Considerations between InGaN and Conventional High-Brightness Light-Emitting Diodes

  • Lee, Song-Jae
    • Journal of the Optical Society of Korea
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    • 제2권1호
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    • pp.13-21
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    • 1998
  • Based on the escape cone concepts, high-brightness light-emitting diodes (LEDs) have been analyzed. In AlGaAs or InGaAlP LEDs, photon absorption in the ohmic region under the electrode is known to be significant. Thus, ins general, a thick window layer (WL) and a transparent substrate (TS) would minimize photon shielding by the electrodes and considerably improve photon output coupling efficiency. However, the schemes do not seem to be necessary in InGaN system. Photon absorption in ohmic contact to a wide bandgap semiconductor such as GaN may be negligible and, as a result, the significant photon shielding by the electrodes will not degrade the photon output coupling efficiency so much. The photon output coupling efficiency estimated in InGaN LEDs is about 2.5 - 2.8 times that of the conventional high-brightness LED structures based on both WL and TS schemes. As a result, the extenal quantum efficiency in InGaN LEDs is as high as 9% despite the presumably very low internal quantum efficiency.

Eucalyptus pellita의 기내(器內) 줄기생장에 미치는 LEDs (Light-emitting diodes) 및 환기처리(換氣處理) 효과 (Effect of Light-emitting Diodes (LEDs) and Ventilation on the in vitro Shoot Growth of Eucalyptus pellita)

  • 김지아;문흥규
    • 한국산림과학회지
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    • 제95권6호
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    • pp.716-722
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    • 2006
  • Eucalyptus pellita 기내줄기를 재료로 광질에 따른 생육 특성을 조사하였다. 전반적으로 줄기의 생장은 광질보다는 환기처리가 더 주요한 요인으로 나타났다. 특히 환기처리 한 청색광(blue LED) 하에서 묘고, 잎수, 절간수 및 액아수가 양호하였고, 잎에 캘러스가 형성되지 않았다. 식물체의 충실정도를 나타내는 건물율 역시 환기처리 하에서 높게 나타났으며, 청색광 하에서 가장 높은 건물율을 나타냈다. 광질별 총엽록소 함량은 형광등과 혼합광 R5B5(50% red LED + 50% blue LED)에서 $24.5{\mu}g/g$$20.1{\mu}g/g$으로 가장 높게 나타났다. 광합성에 관여하는 카로티노이드 함량 역시 적색광(red LED)을 제외한 모든 광질에서 환기 처리 시 양호하게 나타났다. 결론적으로 E. pellita의 기내 줄기생장은 환기처리가 중요하고, 총 카로티노이드 함량을 기준으로 볼 때 혼합광 R5B5에서 건전한 줄기생장이 가능한 것으로 나타났다.

질화계 발광다이오드의 측면 형상화를 이용한 광 추출 효율 향상 (Improvement of Light Extraction Efficiency by Side Surface Texturing in Nitride-based Light-Emitting Diodes)

  • 장동현;심종인
    • 한국광학회:학술대회논문집
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    • 한국광학회 2008년도 동계학술발표회 논문집
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    • pp.95-96
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    • 2008
  • We theoretically investigated the influence of side surface texturing on the light extraction efficiency in nitride-based light-emitting diodes (LEDs). The light extraction efficiency was expected as 1.2 times larger in a LED with textured surfaces compared to without ones.

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380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure

  • Bae, Sung-Bum;Kim, Sung-Bok;Kim, Dong-Churl;Nam, Eun Soo;Lim, Sung-Mook;Son, Jeong-Hwan;Jo, Yi-Sang
    • ETRI Journal
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    • 제35권4호
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    • pp.566-570
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    • 2013
  • In this paper, we demonstrate the capabilities of 380-nm ultraviolet (UV) light-emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi-structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al-metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.

Enhanced Internal Quantum Efficiency and Light Extraction Efficiency of Light-emitting Diodes with Air-gap Photonic Crystal Structure Formed by Tungsten Nano-mask

  • Cho, Chu-Young;Hong, Sang-Hyun;Kim, Ki Seok;Jung, Gun-Young;Park, Seong-Ju
    • Bulletin of the Korean Chemical Society
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    • 제35권3호
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    • pp.705-708
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    • 2014
  • We demonstrate the blue InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) with an embedded air-gap photonic crystal (PC) which was fabricated by the lateral epitaxial overgrowth of GaN layer on the tungsten (W) nano-masks. The periodic air-gap PC was formed by the chemical reaction of hydrogen with GaN on the W nano-mask. The optical output power of LEDs with an air-gap PC was increased by 26% compared to LEDs without an air-gap PC. The enhanced optical output power was attributed to the improvement in internal quantum efficiency and light extraction efficiency by the air-gap PC embedded in GaN layer.

인공광원으로 발광다이오우드를 이용한 묘생산 시스템에서 식물생장 및 형태형성 제어 -발광다이오우드의 광강도 및 분광 특성 (Plant Growth and Morphogenesis Control in Transplant Production System using Light-emitting Diodes(LEDs) as Artificial Light Source- Light Intensity and Spectral Characteristics of LEDs-)

  • 김용현
    • 한국농업기계학회:학술대회논문집
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    • 한국농업기계학회 1999년도 동계 학술대회 논문집
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    • pp.227-233
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    • 1999
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Numerical Study of Polarization-Dependent Emission Properties of Localized-Surface-Plasmon-Coupled Light Emitting Diodes with Ag/SiO2 Na

  • Moon, Seul-Ki;Yang, Jin-Kyu
    • Journal of the Optical Society of Korea
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    • 제18권5호
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    • pp.582-588
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    • 2014
  • We study polarization-dependent spontaneous emission (SE) rate and light extraction efficiency (LEE) in localized-surface-plasmon (LSP)-coupled light emitting diodes (LEDs). The closely packed seven $Ag/SiO_2$ core-shell (CS) nanoparticles (NPs) lie on top of the GaN surface for LSP coupling with a radiated dipole. According to the dipole direction, both the SE rate and the LEE are significantly modified by the LSP effect at the $Ag/SiO_2$ CS NPs when the size of Ag, the thickness of $SiO_2$, and the position of the dipole source are varied. The enhancement of the SE rate is related to an induced dipole effect at the Ag, and the high LEE is caused by light scattering with an LSP mode at $Ag/SiO_2$ CS NPs. We suggest the optimum position of the quantum well (QW) in blue InGaN/GaN LEDs with $Ag/SiO_2$ CS NPs for practical application.

Phototactic behavior 9: phototactic behavioral response of Tribolium castaneum (Herbst) to light-emitting diodes of seven different wavelengths

  • Song, Jaeun;Jeong, Eun-Young;Lee, Hoi-Seon
    • Journal of Applied Biological Chemistry
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    • 제59권2호
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    • pp.99-102
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    • 2016
  • The phototactic behavioral responses of Tribolium castaneum adults to light-emitting diodes (LEDs) of seven different wavelengths were determined under various conditions (light exposure times, light sources, and luminance intensities) and compared with those of a black light bulb (BLB) under laboratory conditions. Based on the attractive rate (%) of T. castaneum adults under optimal conditions (50 lx and an 48 h exposure time) in the dark, red LED ($625{\pm}10nm$) exhibited the highest potential attractive rate (97.8 %), followed by yellow ($590{\pm}5nm$, 68.9 %), green ($520{\pm}5nm$, 55.6 %), infrared (IR) (730 nm, 54.4 %), white (450-620 nm, 41.1 %), blue ($470{\pm}10nm$, 34.4 %), and ultraviolet (UV) (365 nm, 0.06 %) LEDs. In comparison, red LED (97.8 %) was approximately 3.4 times more attractive to T. castaneum adults than the BLB (28.9 %). These results indicate that a red LED trap could be useful to control T. castaneum adults.

질화물계 발광다이오드에서 광 추출 효율의 패턴 기판 의존성 (Dependency of Light Extraction Efficiency on Sapphire Substrate Pattern Shapes in Light Emitting Diodes)

  • 장동현;심종인
    • 한국광학회:학술대회논문집
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    • 한국광학회 2008년도 동계학술발표회 논문집
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    • pp.355-356
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    • 2008
  • The light extraction efficiencies of GaN-based light-emitting diodes (LEDs) grown on differently patterned sapphire substrates were investigated by using the ray tracing method. It was found that angle of the pattern surface against the sapphire surface, the number of pattern per unit area were important structural factors for high extraction efficiency.

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