• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.444-445
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• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.21-21
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• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.

• Transactions on Electrical and Electronic Materials
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• 제16권4호
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• pp.201-205
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• 2015

This paper dealt with the condensing technology of an LED light source that uses a parabolic reflector to replace a searchlight equipped with a xenon lamp. A ray-tracing simulation was conducted to analyze the influence of the diameter of the reflector and the size of the light source on light condensing. The combination of a parabolic reflector with a diameter of 620 mm and a focal distance of 220 mm, and a 9 mm multi-chip package (MCP) with a luminous flux of 7,000 lm showed the narrowest beam angle. The luminous intensity at the center was measured at 7.7×10⁶ cd. The distance between the light source and the point where the illuminance was 1 lx was calculated to be 2.8 km. The power consumption of the system was 95 W, which is only 9.5% of that of the 1 kW xenon searchlight, and the beam angle was 1.03°. In a site experiment, it was confirmed that the light ray reflected from the LED searchlight proceeds forward without any diffusion because of the narrow beam angle.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• 한국가시화정보학회지
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• 제10권1호
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• pp.34-39
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• 2012

In the present study, oxygen transfer process across gas-liquid interface in a Y-shape micro-channel is quantitatively visualized using the micro laser induced fluorescence (${\mu}$-LIF) technique. Diffusion coefficient of Oxygen ($D_L$) is estimated based on the experimental results and compared to its theoretical value. Tris ruthenium (II) chloride hexahydrate was used as the oxygen quenchable fluorescent dye. A light-emitting diode (LED) with wavelength of 450 nm was used as the light source and phosphorescence images of fluorescent dye were captured by a CMOS high speed camera installed on the microscope system. Water having dissolved oxygen (DO) value of 0% and pure oxygen gas were injected into the Y-shaped microchannel by using a double loading syringe pump. In-situ pixel-by-pixel calibration was carried out to obtain Stern-Volmer plots over whole flow field. Instantaneous DO concentration fields were successfully mapped according to Stern-Volmer plots and DL was calculated as $2.0675{\times}10^{-9}\;m^2/s$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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• pp.18-20
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• 2010

수조구조의 InGaN LED 소자에 적용이 가능하며 높은 열적안정성을 갖는 저저항 고반사율 p형 오믹 전극을 개발하였다. Ag에 Mg을 첨가하여 p형 전극을 이용하여 $400^{\circ}C$, 공기중에서 1분간 열처리 후 $2.2\;{\times}\;10^{-5}\;{\Omega}cm^2$의 낮은 접촉 저항을 얻을 수 있었고, 460 nm 파장에서 82.6%의 높은 반사율을 획득할 수 있었다. 이는 Mg가 첨가됨에 따라 Ag가 고온에서 집괴되는 원인인 산소-공공 결합을 줄여줌으로써 높은 열적 안정성을 얻게 되었다. Ag를 열처리 할 경우, 외부에 존재하는 산소가 공공 자리에 들어간 후, 산소와 공공의 강한 인력에 의해 산소가 침입형 자리에 들어가서면서 두개의 공공과 강하게 bonding을 갖는 diffusion center가 많이 존재하게 된다. 하지만 Mg가 첨가되었을 경우, Oxygen affinity가 강한 Mg에 산소가 먼저 결합을 이루면서 산소-공공결합을 줄여주게 되어 높은 온도에서도 diffusion이 이루어지지 않고 높은 열적 안정성을 갖게 된다.

• 정보보호학회논문지
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• 제16권6호
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• pp.15-24
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• 2006

최근 휴대용 기기의 중요성이 증가하면서 이에 적합한 암호 구현이 요구되고 있으나, 기존의 암호 구현 방식이 속도에 중점을 두고 있어 휴대용 기기에서 요구하는 전력 소모나 면적을 만족하지 못하고 있다. 따라서 휴대용 기기에 적합한 암호 알고리즘의 경량 구현이 매우 중요한 과제로 떠오르고 있다. 이 논문에서는 국내 KS 표준 알고리즘인 ARIA 알고리즘을 32-비트 구조를 이용하여 경량화하는 방법을 제안한다. 확산 계층의 새로운 설계를 이용하여 구현된 결과는 아남 0.25um공정에서 11301 게이트를 차지하며, 128-비트 키를 이용할 때 87/278/256 클락 (초기화/암호화/복호화)을 소모한다. 그리고 128-비트 키만을 지원하는 기존의 구현과 달리, 256-비트 키까지 지원하도록 구성하여 ARIA 알고리즘의 표준을 완벽히 구현하였다. 이를 통해 지금까지 알려진 가장 경량화된 구현 결과와 비교하면 면적은 7% 감소, 속도는 13% 향상된 결과이다.

• 한국광학회지
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• 제10권1호
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• pp.32-39
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• 1999

본연구에서는 연속적으로 세기 분포를 갖는 CGH 패턴을 두 가지 서로 다른 방법으로 이진화를 하고 그 패턴을 LCSLM(liquid crystal spatial light modulator)에 적용하여 재생 특성을 비교해 보았다. 이진화 방법으로는 에러확산 알고리즘과 직접 얀자화 방법을 사용하였다. 재생 특성 비교에 사용한 인자들은 전체 밝기 평균, 평균 제곱 에러, 그리고 회절 효율이다. 실험에 사용한 LCSLM은 256$\times$256 점들을 가지고 87% fill factor와 15$\mu$m pixel pitch를 가지는 이진의 전기적으로 어드레스되는 반사형 강유전성 액정 공간 광 변조기이다.

• 한국인쇄학회지
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• 제26권1호
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• pp.73-85
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• 2008

We have manufactured a photoresist which has excellent dispersity and good applying property due to 330cps of viscosity for environment-friendly and economical maskless screen plate making. And the photoresist applied on the screen stretched was exposed without mask by beam projector with CRT light source. Then it was developed by air spray with $1.7kgf/cm^2$ of injection pressure. The pencil hardness and solvent resistance of curing photoresist film were worse than those of conventional photoresist film and the maximum resolution of line image formed by maskless screen plate making was 0.5 mm since the exposure system for maskless plate making has weak light intensity and the diffusion of light. But we could obtain maskless screen plate which has sharp edges of line image and confirm a possibility of dry development process by air spray method.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1989년도 추계학술발표회논문집
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• pp.9-12
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• 1989

ABSTRACT -- Recently, a method of magnetically-enhanced discharge columns is considered to increase the luminous efficacy of discharge lamps, which is based upon the face that the diffusion motion of charged particles in the discharge column strongly depends on the applied magnetic fields. This study investigates the effect of applied transverse magnetic fields on the light output of low-pressure Hg-Ar discharge. As a result, it is found that the electric field in the positive column increases according to the applied megnetic field, which causes an increase in the total light output. And this effect is much more pronounced upon the spectral line originating form the higher levels.