• 한국결정성장학회지
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• 제16권6호
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• pp.267-272
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• 2006

일련의 $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$ 형광체를 고상법으로 합성하였다. $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$의 구조와 발광 특성을 조사하였다. $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$은 보라색 발광 다이오드의 발광 파장인 400 nm에서 강한 흡수가 있다. $SrGa_2S_4:Ce,Na$의 발광 봉우리는 448 nm와 485 nm에 있다. $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$에서 Sr이 Ca으로 부분 치환되면 발광 파장이 장파장으로 이동된다. 다파장 백색 LED를 제작할 때 $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$은 보라색 LED로 여기하여 청색 발광 형광체로 사용 될 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.76-76
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• 2008

The resonance properties due to the surface plasmon(SP) excitation of metal nanoparticles make the nanocomposite films promising for various applications such as optical switching devices. In spite of the well-known ultra-sensitive operation of optical switches based on a guided wave, the application of nanocomposite film(NC) has inherent limitation originating from the excessive optical loss related with the surface plasmon resonance(SPR). In this study, we addressed this problem and present the experimental and theoretical analysis on the pump-probe optical switching in prism-coupled Au(1 vol.%):$SiO_2$ nanocomposite waveguide film. The guided mode was successfully generated using a near infrared probe beam of 1550 nm and modulated with an external pump beam of 532 nm close to the SPR wavelength. We extend our approach to ultra-fast operation using a pulsed laser with 5 ns pulse width. To improve the switching speed through the reduction in thermal loading effect accompanied by the resonant absorption of pump beam light, we adopted a metallic film as a coupling layer instead of low-index dielectric layer between the high-index SF10 prism and NC slab waveguide. We observed great enhancement in switching speed for the case of using metallic coupling layer, and founded a distinct difference in origin of optical nonlinearities induced during switching operation using cw and ns laser.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권10호
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• pp.461-466
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• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권4호
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.164-168
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• 2011

Nanocrystalline cadmium sulphide (CdS) thin films were prepared using chemical bath deposition (CBD), and the structural, optical and photoconductive properties were investigated. The crystal structure of CdS thin film was studied by X-ray diffraction. The crystallite size, dislocation density and lattice constant of CBD CdS thin films were investigated. The dislocation density of CdS thin films initially decreases with increasing film thickness, and it is nearly constant over the thickness of 2,500 ${\AA}$. The dislocation density decreases with increasing the crystallite size. The Urbach energies of CdS thin films are obtained by fitting the optical absorption coefficient. The optical band gap of CdS thin films increases and finally saturates with increasing the lattice constant. The Urbach energy and optical band gap of the 2,900 A-thick CdS thin film prepared for 60 minutes are 0.24 eV and 2.83 eV, respectively. The activation energies of the 2,900 ${\AA}$-thick CdS thin film at low and high temperature regions were 14 meV and 31 meV, respectively. It is considered that these activation energies correspond to donor levels associated with shallow traps or surface states of CdS thin film. Also, the value of ${\gamma}$ was obtained from the light transfer characteristic of CdS thin film. The value of ${\gamma}$ for the 2,900 A-thick CdS thin film was 1 at 10 V, and it saturates with increasing the applied voltage.

• Smart Structures and Systems
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• 제17권6호
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• pp.957-980
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• 2016

Structural damage detection (SDD) is a challenging task in the field of structural health monitoring (SHM). As an exploring attempt to the SDD problem, a hybrid self-adaptive Firefly-Nelder-Mead (SA-FNM) algorithm is proposed for the SDD problem in this study. First of all, the basic principle of firefly algorithm (FA) is introduced. The Nelder-Mead (NM) algorithm is incorporated into FA for improving the local searching ability. A new strategy for exchanging the information in the firefly group is introduced into the SA-FNM for reducing the computation cost. A random walk strategy for the best firefly and a self-adaptive control strategy of three key parameters, such as light absorption, randomization parameter and critical distance, are proposed for preferably balancing the exploitation and exploration ability of the SA-FNM. The computing performance of the SA-FNM is evaluated and compared with the basic FA by three benchmark functions. Secondly, the SDD problem is mathematically converted into a constrained optimization problem, which is then hopefully solved by the SA-FNM algorithm. A multi-step method is proposed for finding the minimum fitness with a big probability. In order to assess the accuracy and the feasibility of the proposed method, a two-storey rigid frame structure without considering the finite element model (FEM) error and a steel beam with considering the model error are taken examples for numerical simulations. Finally, a series of experimental studies on damage detection of a steel beam with four damage patterns are performed in laboratory. The illustrated results show that the proposed method can accurately identify the structural damage. Some valuable conclusions are made and related issues are discussed as well.

• 해양환경안전학회:학술대회논문집
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• 해양환경안전학회 2007년도 춘계학술발표회
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• pp.109-113
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• 2007

요트에서는 가벼운 선체에 비해 고성능의 엔진을 탑재하게 되므로 엔진에서 발생하는 소음이 승조원 및 여객에 미치는 영향은 매우 크다. 최근에는 국내에서도 크루즈요트의 생산이 시도되고 있지만, 선박의 성능과 함께 기관소음의 차단기술이 구매자의 요구에 부응하지 못하고 있는 실정이다. 이와 같이 선실의 소음이 구매를 결정하는 중요한 척도로 되고 있지만, 메인엔진의 소음을 차단하기 위한 대책 이 부족한 형편이다. 그러나 최근에 발전되고 있는 모니터링설비와 지능제어시스템을 이용하면, 주 엔진의 주변을 고효율의 흡음벽으로 차단하여 기관실의 소음을 개선할 수 있다. 본 연구에서는 소음을 흡수할 수 있는 흡음벽의 성능을 높이기 위해 헬름홀츠 공명기의 원리를 적용에 대하여 연구하였다.

• Bulletin of the Korean Chemical Society
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• 제34권1호
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• pp.167-173
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• 2013

A series of highly efficient red phosphorescent heteroleptic iridium(III) complexes 1-6 containing two cyclometalating 2-(2,4-substitued phenyl)quinoxaline ligands and one chromophoric ancillary ligand were synthesized: (pqx)$_2Ir$(mprz) (1), (dmpqx)$_2Ir$(mprz) (2), (dfpqx)$_2Ir$(mprz) (3), (pqx)$_2Ir$(prz) (4), (dmpqx)$_2Ir$(prz) (5), (dfpqx)$_2Ir$(prz) (6), where pqx = 2-phenylquinoxaline, dfpqx = 2-(2,4-diflourophenyl)quinoxaline, dmpqx = 2-(2,4-dimethoxyphenyl)quinoxaline, prz = 2-pyrazinecarboxylate and mprz = 5-methyl-2-pyrazinecarboxylate. The absorption, emission, electrochemical and thermal properties of the complexes were evaluated for potential applications to organic light-emitting diodes (OLEDs). The structure of complex 2 was also determined by single-crystal X-ray diffraction analysis. Complex 2 exhibited distorted octahedral geometry around the iridium metal ion, for which 2-(2,4-dimethoxyphenyl)quinoxaline N atoms and C atoms of orthometalated phenyl groups are located at the mutual trans and cis-positions, respectively. The emission spectra of the complexes are governed largely by the nature of the cyclometalating ligand, and the phosphorescent peak wavelengths can be tuned from 588 to 630 nm with high quantum efficiencies of 0.64 to 0.86. Cyclic voltammetry revealed irreversible metal-centered oxidation with potentials in the range of 1.16 to 1.89 V as well as two quasi-reversible reduction waves with potentials ranging from -0.94 to -1.54 V due to the sequential addition of two electrons to the more electron-accepting heterocyclic portion of two distinctive cyclometalated C^N ligands.

• 천문학논총
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• 제30권2호
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• pp.585-586
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• 2015

4U 1323-62, a low mass X-ray binary with an orbital period of 2.94 hr, exhibits periodic X-ray dips, which are due to absorption by the bulge of the outer accretion disk. The purpose of this study is to search for orbital period changes using archived X-ray data over a time span of 20 years. We present our preliminary results from analyzing light curves observed by RXTE, BeppoSAX, XMM-Newton and Suzaku. We used the method proposed by Hu et al. (2008) to estimate dip center time and adopted the Observed - Calculated method to measure changes in period. We obtained an orbital period of 2.941917(36) hr and a period derivative of $\dot{P}_{orb}/P_{orb}=(-9.9{\pm}3.5){\times}10^{-7}yr^{-1}$. The F-test result shows that the quadratic ephemeris is describes the evolution of the dip phases better than the linear ephemeris at a greater than 95% confidence level. More X-ray data collected from the early 80s will be included to further refine the orbital ephemeris.

• 천문학회보
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• 제37권2호
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• pp.111.2-111.2
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• 2012

We observed an Ellerman bomb(EB) and its associated surge using the Fast Imaging Solar Spectrograph(FISS) and the broadband TiO filter of the 1.6 meter New Solar Telescope at Big Bear Solar Observatory. As is well-known, the EB appears as a feature that is very bright at the far wings of the H alpha line. The lambdameter method applied to these wings indicates that the EB is blue-shifted up to 6km/s in velocity. In the photospheric level below the EB, we see rapidly growing "granule-like" feature. The transverse velocity of the dark lane at the edge of the "granule" increased with time as reached a peak of 6km/s, at the time of the EB's occurrence. The surge was seen in absorption and varied rapidly both in the H alpha and the Ca II 8542 line. It originated from the Ellerman bomb, and was impulsively accelerated to 20km/s toward us(blueshift). Then the velocity of the surge gradually changed from blueshift of 20km/s to redshift of 40km/s. By adopting the cloud model, we estimated the temperature of the surge material at about 27000K and the non-thermal velocity at about 10km/s. Our results shed light on the conventional idea that an EB results from the magnetic reconnection of an emerging flux tube and pre-existing field line.