• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.444-445
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• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.21-21
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• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.201-205
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• 2015

This paper dealt with the condensing technology of an LED light source that uses a parabolic reflector to replace a searchlight equipped with a xenon lamp. A ray-tracing simulation was conducted to analyze the influence of the diameter of the reflector and the size of the light source on light condensing. The combination of a parabolic reflector with a diameter of 620 mm and a focal distance of 220 mm, and a 9 mm multi-chip package (MCP) with a luminous flux of 7,000 lm showed the narrowest beam angle. The luminous intensity at the center was measured at 7.7×10⁶ cd. The distance between the light source and the point where the illuminance was 1 lx was calculated to be 2.8 km. The power consumption of the system was 95 W, which is only 9.5% of that of the 1 kW xenon searchlight, and the beam angle was 1.03°. In a site experiment, it was confirmed that the light ray reflected from the LED searchlight proceeds forward without any diffusion because of the narrow beam angle.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• Journal of the Korean Society of Visualization
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• v.10 no.1
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• pp.34-39
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• 2012

In the present study, oxygen transfer process across gas-liquid interface in a Y-shape micro-channel is quantitatively visualized using the micro laser induced fluorescence (${\mu}$-LIF) technique. Diffusion coefficient of Oxygen ($D_L$) is estimated based on the experimental results and compared to its theoretical value. Tris ruthenium (II) chloride hexahydrate was used as the oxygen quenchable fluorescent dye. A light-emitting diode (LED) with wavelength of 450 nm was used as the light source and phosphorescence images of fluorescent dye were captured by a CMOS high speed camera installed on the microscope system. Water having dissolved oxygen (DO) value of 0% and pure oxygen gas were injected into the Y-shaped microchannel by using a double loading syringe pump. In-situ pixel-by-pixel calibration was carried out to obtain Stern-Volmer plots over whole flow field. Instantaneous DO concentration fields were successfully mapped according to Stern-Volmer plots and DL was calculated as $2.0675{\times}10^{-9}\;m^2/s$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.18-20
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• 2010

The mechanism for suppression of Ag agglomeration in Ag-Mg alloy ohmic contact to p-GaN is investigated. The Ag-Mg alloy ohmic contact shows low contact resistivity of $6.3\;{\times}\;10^{-5}\;{\Omega}cm^2$, high reflectance of 85.5% at 460 nm wavelength after annealing at $400^{\circ}C$ and better thermal stability than Ag contact The formation of Ga vacancies increase the net hole concentration, lowering the contact resistivity. Moreover, the oxidation of Mg atoms in Ag film increase the work function of Ag-Mg alloy contact and prevents Ag oxidation. The inhibition of oxygen diffusion by Mg oxide suppresses the Ag agglomeration, leading to enhance light reflectance and thermal stability.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.16 no.6
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• pp.15-24
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• 2006

Recently, the importance of the area efficient implementation of cryptographic algorithm for the portable device is increasing. Previous ARIA(Academy, Research Institute, Agency) implementation styles that usually concentrate upon speed, we not suitable for mobile devices in area and power aspects. Thus in this paper, we present an area efficient AR processor which use 32-bit architecture. Using new implementation technique of diffusion layer, the proposed processor has 11301 gates chip area. For 128-bit master key, the ARIA processor needs 87 clock cycles to generate initial round keys, n8 clock cycles to encrypt, and 256 clock cycles to decrypt a 128-bit block of data. Also the processor supports 192-bit and 256-bit master keys. These performances are 7% in area and 13% in speed improved results from previous cases.

• Korean Journal of Optics and Photonics
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• v.10 no.1
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• pp.32-39
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• 1999

In this paper, we made CGH patterns that had continuous amplitude distribution binary coded patterns with two different methods, and analyzed those patterns by using LCSLM (liquid crystal spatial light modulator). The error diffusion algorithm and direct quantization method were used as the binarization methods. The parameters of overall average brightness, mean square error, and diffraction efficiency were used in the comparison of reconstruction characteristics. The LCSLM which we used in this experiment was a binary reflective ferroelectric liquid crystal spatial light modulator addressed electrically with 256$\times$256 pixels, 87% fill factor and 15$\mu$m pixel pitch.

• Journal of the Korean Graphic Arts Communication Society
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• v.26 no.1
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• pp.73-85
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• 2008

We have manufactured a photoresist which has excellent dispersity and good applying property due to 330cps of viscosity for environment-friendly and economical maskless screen plate making. And the photoresist applied on the screen stretched was exposed without mask by beam projector with CRT light source. Then it was developed by air spray with $1.7kgf/cm^2$ of injection pressure. The pencil hardness and solvent resistance of curing photoresist film were worse than those of conventional photoresist film and the maximum resolution of line image formed by maskless screen plate making was 0.5 mm since the exposure system for maskless plate making has weak light intensity and the diffusion of light. But we could obtain maskless screen plate which has sharp edges of line image and confirm a possibility of dry development process by air spray method.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1989.10a
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• pp.9-12
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• 1989

ABSTRACT -- Recently, a method of magnetically-enhanced discharge columns is considered to increase the luminous efficacy of discharge lamps, which is based upon the face that the diffusion motion of charged particles in the discharge column strongly depends on the applied magnetic fields. This study investigates the effect of applied transverse magnetic fields on the light output of low-pressure Hg-Ar discharge. As a result, it is found that the electric field in the positive column increases according to the applied megnetic field, which causes an increase in the total light output. And this effect is much more pronounced upon the spectral line originating form the higher levels.