• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.995-1001
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• 1998

As a basic study for cathode materials of {{{{ { {LiMn }_{2 }O }_{4 } }}-based lithium-ion secondary batteries Li({{{{ { { { {Mn }_{1-$\delta$ }Nb }_{$\delta$} )}_{2 }O }_{4 } }} ($\delta$=0.05, 0.1, 0.2) materials which Nb is substituted for Mn were synthesized by the solid state reaction at 80$0^{\circ}C$ and 110$0^{\circ}C$ respectively. The second phase {{{{ { LiNbO}_{3 } }} appeared above $\delta$=0.1 As the result of im-pedance analysis as the amount of substituted Nb increased the resistivity of grain boundary increased greatly. Compared to undoped-{{{{ { {LiMn }_{2 }O }_{4 } }} the electrical conductivity of Li({{{{ { { { {Mn }_{1-$\delta$ }Nb }_{$\delta$} )}_{2 }O }_{4 } }} decreased slightly but is charging capacity and potential plateau increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1051-1057
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• 2000

A traveling-wave CPW(coplanar waveguide) electrode with abruptly broken input/output-taper for LiNbO$_3$optical modulator was designed and fabricated. The electrical characteristics of traveling-wave electrode on z-cut LiNbO$_3$crystal with SiO$_2$buffer layers were measured by network analyzer. To confirm the possibility of the electro-optic modulator electrode, detailed calculations of the impedance, microwave effective index and attenuation constants are presented as a function of the microwave electrode thickness, but the buffer layer thickness is fixed as 1${\mu}{\textrm}{m}$. These characteristics are discussed from the viewpoint of the device optimization and are expected to be design guides for the LiNbO$_3$modulator’s electrodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.517-523
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• 2008

The microwave dielectric properties of $LiNb_3O_8-TiO_2$ based ceramics with low firing agents, CuO, $Bi_2O_3$, $B_2O_3$, $SiO_2$, $TiO_2$, were investigated to improve the sintering condition for the LTCC system. According to the X-ray diffraction and SEM, the ceramics of $LiNb_3O_8-TiO_2$ with low firing agents showed no significant second phases within a range of experiments, and fine microstructures. By adding the low firing agents, the sintering temperature decreased from $1200^{\circ}C$ to $925^{\circ}C$. Based on the results of electrical measurements, the $LiNb_3O_8-TiO_2$ ceramics showed a promising microwave dielectric properties for LTCC applications, those are ${\varepsilon}_r$ (dielectric constant) = 44, Q f (quality factor) = 18000, and ${\tau}_f$ (the temperature coefficient of resonant frequency) = $-1.5\;ppm/^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.2
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• pp.15-18
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• 1979

Deposited film of a transition metal, Ti was diffused into LiNbO3 crystals to form integrated optical waveguides. By suppressing L O out -diffusion, single-mode waveguides could be constructed. Measurements on characteristics were performed by using the prise coupling technique and a He-Ne laser. ( λ = 0.6328 $\mu$m)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.63-66
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• 1998

Prototype MFSFET′s using ferroelectric oxide LiNbO$_3$ as a gate insulator have been successfully fabricated with the help of 2 sheets of metal masks and demonstrated nonvolatile memory operations of the MFSFET′s. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were 600 $\textrm{cm}^2$/V.s and 0.16 mS/mm, respectively. The drain current of the "on" state was more than 4 orders of magnitude larger than the "off" state current at the same "read" gate voltage of 0.5 V, which means the memory operation of the MFSFET. A write voltage as low as $\pm$3 V, which is applicable to low power integrate circuits, was used for polarization reversal.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.111-115
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• 1997

Iron-doped LiNbO$_3$ crystals were grown by floating zone(FZ) method with different [Li]/[Nb] ratio in order to investigate doping effects of transition metal impurity in LiNbO$_3$ crystal. The grown crystals were analyized edge in UV/VIS/IR spectrometry and EPMA(electron probe micro-analysis). The absorption edge in UV-VIS region and OH-absorption peak in IR region were investigated. The change of Fe concentration along the solidification direction was also investigated

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.53-58
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• 2006

When external field was applied to congruent $LiNbO_3$, it was investgated for domain formation and expansion of $LiNbO_3$. The domain wall velocities of 0.5 mm thickness $LiNbO_3$ were 28.70, 16.02 and $5.75{\mu}m/sec$ under poling field of 23.5, 22.0 and 21.0 kV/mm, respectively. As $1 M{\Omega}$ resistor was used in domain inversion system, harmonic domain inversion was not achieved by rapid domain expansion. And 50% duty cycle periodically poled $LiNbO_3$ have been fabricated by charge control using $10 M{\Omega}$ resistor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.11-14
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• 2009

Yb and Zn co-doped $LiNbO_3$ single crystal rods which had a diameter of 2 mm and a length of $15{\sim}25 mm$ were grown by micro-pulling down (${\mu}-PD$) method. The single crystals were successfully grown and had a uniform diameter and a smooth surface without crack. We realized of $LiNbO_3$ single crystals were hexagonal structure to compare with peaks of $LiNbO_3$ powder by Raman spectra. The threshold level of Zn concentration which is effective for optical damage were observed as about 1 mol% with IR transmission spectra.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.222-224
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• 1989

A new fabrication method of proton-diffused LiNbO3 channel waveguides with self-aligned SiO2-Cladding structures are reported, which provides easy control of mode pattern shapes and sizes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.30-36
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• 1992

In order to measure the characteristics of Surface Acousitc Wave(SA W) with compositions of $LiNbO_3$ single crystal, $128^{\circ}$ Y cut wafer was fabricated from $LiNbO_3$ single crystals with the composition range of 47-50 $Li_2O$mol%. Delay lines were formed on the $128^{\circ}$ Y cut wafer using photolithography technique. Delay time was measured by pulse-echo overlap method. The compositional dependence of SAW characteristics, SAW velocity, electro-mechanical coupling coefficient$(K_s^2)$ and temperature coefficient of delay time(TCD), were investigated.