• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.400-406
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• 1998

We investigated the preparation and guided-mode properties of $Ti:LiNbO_3$ waveguides which were fabricated by Ti in-diffusion. The diffusion method to reduce the Li out-diffusion was proposed. The optical guided-mode and propagation loss based on butt-coupling pigtailed with PMF-input were measured. How to improve the polishing grade of waveguide endfaces is newly proposed in this paper. To show the mode propagations, the BPM simulations of channel waveguide are described.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.77-79
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• 1997

A 5Gbps LiNb $O_3$ optical phase modulator was packaged and described. A APE(annealed proton exchange) method was employed for the optical waveguide and the electrode of ACPS (asymmetric coplanar strip) type was formed by electro-plating on LiNb $O_3$ fort applying microwave signal. The resulted phase modulator exhibited a single mode at a 1550nm wavelength and Its modulation bandwidth, Insertion loss and driving voltage showed 7$^{GHz}$, 3. $O^{dB}$ and 6V. respectively.y.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.10-17
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• 1998

The characteristics of the lithium niobate single ($LiNbO_3$) crystals grown doped with $Mg^{2+}$ or $Zn^{2+}$ ions, which are well-known as the ions improving the photorefractive resistance of $LiNbO_3$, have been analysed in comparision with those of undoped $LiNbO_3$ crystal. In particular, $Zn^{2+}$ doping was estimated to increase the photorefractive resistance indirectly from the optical and electrical properties. Therefore, the $LiNbO_3$ crystals doped with ZnO could be used for high intensive laser device application.

• Bulletin of the Korean Chemical Society
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• v.20 no.8
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• pp.893-896
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• 1999

Novel citric acid based Ti, Nb and Ta precursors that are highly stable in the presence of water were developed. No alkoxides of Ti, Nb and Ta were utilized in the preparation, instead much less moisture-sensitive metallic Ti, NbCl5 and TaCl5 were chosen as starting chemicals for Ti, Nb and Ta, respectively. The feasibility of these chemicals as precursors is demonstrated in the powder synthesis of BaTi4O9, Y3NbO7 and LiTaO3. The water-resistant Ti precursor was employed as a new source of water-soluble Ti in the amorphous citrate method, and phase pure BaTi4O9 in powdered form was successfully synthesized at 800 ？. The Pechini-type polymerizable complex method using the water-resistant Nb and Ta precursors was applied to the synthesis of Y3NbO7 and LiTaO3, and both the powder materials in their pure form were successfully synthesized at reduced tempera-tures, viz. 500-700 ？. The remarkable retardation of hydrolysis of these water-resistant precursors is explained in terms of the partial charge model theory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.288-293
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• 2000

BPM simulation was used in order to fabricate the LiNbO$_3$optical waveguide with optical source of He-Ne laser(λ=0.6328[$\mu$m]). we observed electric field E$_{x}$, E$_{y}$ in the x,y-direction are simulated at the LiNbO$_3$substrate (X1 55[$\mu$m]$\times$Z1 5000[$\mu$m]), where the depth, width and buffer layer of waveguide are 0.2[$\mu$m],4[$\mu$m] and 0.02[$\mu$m] respectively. By applying these parameters of single waveguide to simulate a X-switch, we have chosen index change of 0.002, width of 3[$\mu$m] and angle of 0.4$^{\circ}$~0.6$^{\circ}$of optical waveguide and under these conditions, optical beam propagates cross-side at 0.4$^{\circ}$. When applied switching voltage of 25[V], optical beam of X-switch turns cross-side to bar-side at intersection angle 0.4$^{\circ}$, index change of 0.002, waveguide width of 3[$\mu$m], electrode gap 2[$\mu$m]. By the above results, we can obtain design conditions of theoretical analysis of an X-switch optical waveguide.e.e.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.96-110
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• 1995

Traveling-wave electrodes for the high-speed Ti:LiNbO$_{3}$ modulators are designed. For a solution to the problems of 1) phase-velocity mismatching between the optical wave and the Modulating M/W, 2) M/W electrode characteristic impedance mismateching, we assume devices with 1$\mu$m thick SiO$_{2}$ buffer layer between the electrode and the Ti:LiNbO$_{3}$ substrate. The electrode analyses are performed by the FEM using the second-order triangular elements. The optimum design parameters to satisfy the phase-velocity matching and the characteristic impedance matching are sought for. By use of the analyses' results, a Mach-Zehnder optical modulator with a CPW electrode is designed as an example. the band-width estimation is also illustrated.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.8
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• pp.80-86
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• 1997

H:LiNbO$_{3}$ optical modulator buffered by parylene layer, which has a merits in the bandwidth, power consumption and fabrication as compared with conventional SiO$_{2}$ buffered optical modulator, is proposed and analyzed. The dependences of velocity matching condition, charcteristics impedance, and driving voltage on dielectric constants, thickness of buffer layer, and electrode configurations are demonstrated with finite element calculation. And we performed the physical and chemical test of parylene buffer layer deposited on LiNbO$_{3}$ and under Au electrodes.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.109-116
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• 1998

In this work was produced and analyzed a z-cut Ti:LiNbO$_{3}$ optical waveguide which applies for various optical devices.A waveguide channel with a thickness 8 .mu.m and a length 66,000.mu.m and a mach-zehnder interferometer type waveguide were fabricated at a diffusion temperature 1050.deg. C for 6-8hours in a wet $O_{2}$ environment. The resulting Ti:LiNbO$_{3}$ optical waveguide was measured to have a Ti-strip thickness of 950.angs. and low loss. Surfaces and cross-sections of a fabricated waveguide were analysed. The mode pattern anaysis revealed that the waveguide showed a single mode at a 1550nm wavelength. The effective dimension of the waveguide was calculated by measuring a gaussian profile; Wx=10.95.mu. and Wy=9.14.mu.m. a propagation loss, of 0.50dB/cm for a TM mode and 0.45dB/cm for a TE mode, was low enough to be accepatable for optical devices.

• Korean Journal of Optics and Photonics
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• v.12 no.3
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• pp.230-234
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• 2001

We report a simple method for determining photovoltaic constant and conductivities of any photorefractive crytals which have no inversion symmetry by utilizing the electric field dependence of non-phase-matched second harmonic generation. New theoretical expression for the electric field dependence of Maker fringes is derived and space charge field can be determined using this from the observed change of intensity of second harmonic wave. The photovoltaic constant, dark conductivity and photoconductivity are easily deduced from an analysis of the measured relaxation behavior of space-charge field at two different light intensities. We demonstrate this method for $LiNbO_3$ at 514.5 nm.4.5 nm.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.2
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• pp.135-139
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• 2008

MFISFETs with platinum electrode on the $LiNbO_3$/aluminum nitride/Si(100) structures were successfully fabricated and the properties of the FETs have been discussed. $I_D-V_G$ characteristics of MFISFETs for linear region (that is, 0.1 V of the drain voltage) showed hysteresis loop with a counter-clockwise trace due to the ferroelectric nature of $LiNbO_3$ films. A memory window (i.e., threshold voltage shift) of the fabricated device was about 2[V] for a sweep from -4 to +4[V]. The estimated field-effect electron mobility and transconductance on a linear region were 530[$cm^2/V{\cdot}s$] and 0.16[mS/mm], respectively. The drain current of 27[${\mu}A$] on the "on" state was more than 3 orders of magnitude larger than that of 30[nA] on the "off" state at the same "read" gate voltage of l.5[V], which means the memory operation of the MFISFET.