• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권5호
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• pp.213-218
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• 2003

We investigated the monolayer behavior at the air-water interface with metal solution, the surface morphologies and the electrical properties such as conductivity, The calculated conductivity values of pure water subphase and its complexes with L $i^{+}$ ions are 5.6$\times$10$^{-l6}$ and 1.9$\times$10$^{-14}$ [S/cm], respectively. And the calculated barrier height D values of pure water subphase and its complexes with Li. ions are 0.70 and 0.66 [eV], respectively. We also attempted to fabricate a crown dendrimer Langmuir-Blodgett (LB) films containing functional end group that could form a complex structure with metal ions. Also, we investigated the surface activity of dendrimer films at air-water interface. In AFM images. the larger domains irregularly shaped structures on the top while the smaller ones were free from such defects. In conclusion, it is demonstrated that the metal ion around dendrimer and polymer included crown function group can contribute to make formation of network structure among crown function group and result in change of electrical properties.s.s.

• Bulletin of the Korean Chemical Society
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• 제31권11호
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• pp.3183-3189
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• 2010

In order to increase the specific capacitance and energy density of supercapacitors, non-aqueous supercapacitors were prepared using lithium transition-metal oxides and activated carbons as active materials. The electrochemical properties were analyzed in terms of the content of lithium transition-metal oxides. The results of cyclic voltammetry and AC-impedance analyses showed that the pseudocapacitance may stem from the synergistic contributions of capacitive and faradic effects; the former is due to the electric double layer which is prepared in the interface of activated carbon and organic electrolyte, and the latter is due to the intercalation of lithium ($Li^+$) ions. The specific capacitance and energy density of a supercapacitor improved as the lithium transition-metal oxides content increased, showing 60% increase compared to those of supercapacitor using a pure activated carbon positive electrode.

• 전기화학회지
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• 제25권2호
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• pp.51-68
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• 2022

리튬금속전지는 높은 에너지 밀도를 구현시킬 수 있음에도 불구하고, 단락, 낮은 쿨롱 효율, 용량 손실, 사이클 성능 감소 등의 문제를 초래하는 덴드라이트 성장을 억제시키는 기술은 아직 학술연구 단계에 머물러 있다. 본 논문에서는 최근까지 발표된 리튬금속전극에서 덴드라이트 성장을 억제시킬 수 있는 방법을 4가지로 분류하여 분석해보았다. 즉, 리튬금속전극의 부피 팽창에 대응할 수 있는 유연한 SEI (solid electrolyte interface) 층, 덴드라이트 성장을 물리적으로 억제시킬 수 있는 SEI 지지층, 균일한 리튬 확산을 유도하여 리튬 성장을 조절하는 SHES (self-healing electrostatic shield) 메커니즘, 그리고 리튬의 균일한 전착을 유도하는 마이크로패터닝 등에 대해 연구된 사례들의 장단점을 분석하여, 리튬금속전극의 실용화 연구에 도움을 주고자 한다.

• 세라미스트
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• 제21권4호
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• pp.349-365
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• 2018

Since the electrification of vehicles has been extended, solid-state batteries have been attracting a lot of interest because of their superior safety. Especially, polymer, sulfide, and oxide based materials are being studied as solid electrolytes, and each type of materials has advantaged and disadvantages over others. Oxide electrolytes has higher chemical and electrochemical stability compared to the other types of electrolytes. However, ionic conductivity isn't high enough as much as that of organic liquid electrolytes. Also, there are many difficulties of fabricating solid-state batteries with oxide based electrolytes because they require a sintering process at very high temperature (above ${\sim}800^{\circ}C$). Herein, we review recent studies of solid-state batteries with oxide based electrolytes about the ionic conductivity, interfacial reactions with Li metal, and preparation of solid-state cell.

• 대한전자공학회논문지SD
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• 제38권11호
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• pp.765-770
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• 2001

고온 급속 열처리시킨 LiNbO₃/AIN/Si(100) 구조를 이용하여 MFIS 소자를 제작하고, 비휘발성 메모리 동작 가능성을 확인하였다. 고유전율 AIN 박막 위에 Pt 전극을 증착시켜 제작한 MIS 구조에서 측정한 1MHz C-V 특성곡선에서는 히스테리시스가 전혀 없고 양호한 계면특성을 보였으며, 축적 영역으로부터 산출한 비유전율 값은 약 8 이었다. Pt/LiNbO₃/AIN/Si(100) 구조에서 측정한 1MHz C-V 특성의 축적영역에서 산출한 LiNbO₃ 박막의 비유전율 값은 약 23 이었으며, ±5 V의 바이어스 범위 내에서의 메모리 윈도우는 약 1.2 V이었다. 이 MFIS 구조에서의 게이트 누설전류밀도는 ±500 kV/cm의 전계 범위 내에서 10/sup -9/ A/㎠ 범위를 유지하였다. 500 kHz의 바이폴러 펄스를 인가하면서 측정한 피로특성은 10/sup 11/ cycle 까지 초기값을 거의 유지하는 우수한 특성을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.723-726
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-$\gamma$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• 한국진공학회지
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• 제11권4호
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• pp.230-234
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• 2002

고온 급속 열처리를 행한 $LiNbO_3Si$/(100) 구조를 가지고 여러 가지 전극을 사용하여 금속/강유전체/반도체 커패시터를 제작하였으며, 제작한 커패시터의 비휘발성 메모리 응용 가능성을 확인하였다. MFS 커패시터의 C-V 특성 곡선에서는 LiNbO$_3$박막의 강유전성으로 인한 히스테리시스 특성이 관측되었으며, 1 MHz C-V 특성 곡선의 축적 영역에서 산출한 비유전율은 약 25 이었다. Pt 전극을 사용하여 제작한 커패시터에서는 인가 전계 500 kV/cm 범위에서 $1\times10^{-8}$ A/cm 이하의 우수한 누설전류 특성이 나타났다. midgap 부근에서의 계면 준위 밀도는 약 $10^{11}\textrm{cm}^2$.eV 이었으며, 잔류분극 값은 약 1.2 $\muC/\textrm{cm}^2$ 였다. Pt 전극과 A1 전극 모두 500 kHz 주파수의 바이폴러 펄스를 인가하면서 측정한 피로 특성에서 $10^{10}$ cycle 까지 측정된 잔류 분극 값이 초기 값과 같았다.

• 한국재료학회지
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• 제33권6호
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.