• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.411-414
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• 2009

We report single and two-stacked WOLED. Two-stacked WOLED structure adopts fluorescent blue EML and phosphorescent (red+green) EML. Current efficiency, EQE and color coordinate of two-stacked WOLED are 54.5cd/A, 28.8% and CIExy (0.322, 0.345), respectively. Those of single WOLED are also 20cd/A, 10% and CIExy (0.29, 0.37), respectively. Dual-plate OLED Display (DOD) employing the single WOLED shows high aperture ratio up to 67% in 2-inch panel of which pixel size is equivalent to that of 32 inch Full HD.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.123-126
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• 2008

We report the improved AMOLED with a-Si TFT backplane based on our unique structure. Our new structure is called Dual-plate OLED Display (DOD). It can also achieve not only higher uniformity of luminance in large-sized display due to low electrical resistance of common electrode but also wider viewing angle.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.51-54
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• 2007

Top-emission 3.5 inch qVGA IOD (Inverted AMOLED) was fabricated with inverted EL structure driven by a-Si TFT backplane. In order to get stable driving TFT, we used FCP(Field Control Plate) layer which was connected with the source of the driving TFT. And we developed planarization process to planarize the cathode layer which was the bottom layer of inverted OLED. Our unique IOD structure is “a-Si TFT/ Al(Cathode)/ LiF/ LG-201(ETL)/ EML(RGB)/ HTL/ LG-101(HIL & Buffer layer)/ IZO(Anode)”. LG-201(ETL) layer was studied for more efficient electron injection from cathode to EML, and LG-101(HIL & Buffer layer) covered by IZO anode was also explored for decreasing the EL surface damage.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.100.2-100
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• 1998

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.961-963
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• 2009

a-Si process-based advanced-SPC (a-SPC) TFT has been developed and verified by manufacturing an AMOLED panel having improved cost competitiveness by using the existing a-Si infrastructure. The a-SPC TFT had superior device reliability and current drivability to a-Si TFT to meet the requirements of AMOLED backplane.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.583-586
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• 2009

A 14.1" XGA (1024${\times}$768) LCD panel with Integrated Black Data Insertion (IBDI) has been world first developed successfully based on the integrated amorphous Silicon TFT gate driver which we previously introduced. The notable features compared with the conventional integrated a-Si TFT gate driver circuit are that the circuit consists of Dual buffer, Carry buffer structure, and Q-node cross charging for stable signal scanning characteristic and prevention of coupling between signal lines.

• Proceedings of the Korean Society of Applied Pharmacology
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• 1997.04a
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• pp.6-11
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• 1997

• Proceedings of the Korean Magnetic Resonance Society Conference
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• 2000.01a
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• pp.31-31
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• 2000

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.113-116
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• 2008

The active layer thickness and curing condition dependent performance of an organic thin film transistor (OTFT) with inkjetted organic semiconductor (OSC) layer is studied The best performance of the OTFT was found when the thickness of ose was ~120 nm cured at $60^{\circ}C$. The performance enhancement of the OTFT with inkjetted OSC layer was discussed by comparing the OTFT with spin-coated ose layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1135-1138
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• 2003

A direct light type backlight for large-area LCD-TVs using External Electrode Fluorescent Lamps (EEFLs) has been developed. The brightness was $450cd/m^{2}$(nit) and the luminous uniformity (max/min) was 1.3. The mechanical design of backlight was optimized and the reliability of lamps was secured. As a result, the possibility of backlight with EEFLs for large area LCD-TVs was sufficiently proved.