• Proceedings of the PSK Conference
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• 2003.10b
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• pp.214.2-214.2
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• 2003

Eupatilin (5,7-dihydroxy-3",4",6-trimethoxyflavone) is an active ingredient of an ethanol extract of Artemisia asiatica (DA-9601) that is used in the treatment of gastritis. In vitro and in vivo metabolism of eupatilin in the rats has been studied by LC- electrospray mass spectrometry. Rat liver microsomal incubation of eupatilin in the presence of NADPH and UDPGA resulted in the formation of four metabolites (M1-M4). M1, M2, M3 and M4 were tentatively identified as 3"- or- 4"-O-demethyl-eupatilin glucuronide, eupatilin glucuronide, 6-O-demethyleupatilin and 3"-or 4"-O-demethyl- eupatilin glucuronide, eupatilin glucuronide, 6-O-demethyleupatilin and 3"-or 4"-O- demethyl-eupatilin glucuronide, eupatilin glucuronide, 6-O demethyleupatilin and 3"-or 4"-O-demethyl-eupatilin glucuronide, respectively. (omitted)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.336-337
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• 2005

This study shows the effect of addition of $LiCoO_2$, with different milling time ranging from 0, 30, 200 hours, to the activated carbon electrode. Test cells consisting of activated carbon (100-X%) and $LiCoO_2$ (X%)were made (where X=10, 20, and 40). Test cells with varying concentrations of $LiCoO_2$ which differ in the milling time showed improved specific capacity compare with the cells fabricated using activated carbon alone. The enhanced capacity may be caused due to the addition of $LiCoO_2$ powders at varying concentration. An improved ESR value obtained may be caused by the smaller particle size of $LiCoO_2$. It was concluded that finer the particle size higher will be the efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.141-144
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• 2007

We demonstrated 4 inch QVGA AMOLED display driven by GaInZnO TFT. The structure of GaInZnO TFT is back channel etch (BCE) which is conventional structure for a-Si TFT. The electron mobility of GaInZnO TFT is $2.6\;cm^2/Vs$ and Vt is 3.8V. It is thought that GaInZnO TFT could be backplane for AMOLED TV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.336-336
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• 2008

A positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}K_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The electrical properties and the microstructure of (1-x) $BaTiO_3$ - x $(Bi_{0.5}K_{0.5})TiO_3$ (BBKT) ceramics made using a conventional mixed and have been synthesized by an ordinary sintering technique. The Curie temperature was obviously increased with increasing of $(Bi_{0.5}K_{0.5})TiO_3$ content. The BKT ceramics (x=0.05) sintered at $1400^{\circ}C$ for 4h display low resistivity values of $10^1-10^2$ ohm cm at room temperature, PTCR effect(jump) of 1.05*$10^3$, and the Curie temperature of $T_c=141^{\circ}C$.

• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.256-257
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• 2004

• Proceedings of the Korean Nuclear Society Conference
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• 2005.05a
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• pp.403-404
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• 2005

• Proceedings of the Korean Nuclear Society Conference
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• 2005.10a
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• pp.302-303
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• 2005

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2017.05a
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• pp.104-105
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• 2017

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.173-174
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• 2008

페로브스카이트 구조의 (Ba,Sr,Ca)$TiO_3$ 분말에 $Dy_2O_3$ 불순물을 첨가하여 첨가량에 따른 영향을 연구하였다. 시편의 제작은 Screen-printing을 이용하여 후막으로 제작하였으며, 구조적인 특성과 전기적인 특성을 관찰하였다. XRD 회절 분석을 통하여 $Dy_2O_3$가 첨가된 모든 시편에서 이차상이 없는 전형적인 페로브스카이트 구조를 나타내었다. 시편의 미세구조를 관찰한 결과 grain size는 $Dy_2O_3$ 첨가량이 증가 할수록 감소하였으며, 기공은 증가하는 것을 알 수 있었다. 후막의 두께는 $Dy_2O_3$ 첨가량에 영향을 받지 않았으며 평균 두께는 $69{\mu}m$이었다. 큐리 온도는 $Dy_2O_3$ 첨가량에 따라 감소하였으며, 유전 손실은 상온 이상에서 1%이하로 크게 감소하였다.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1353-1354
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• 2006

The dielectric properties of $Ba_{0.5}Sr_{0.5}TiO_3$(BST) and MgO-doped BST ceramics were investigated for tunable microwave applications by sol-gel method. The effects of MgO mixing with BST. It is observed that Mg substitution into BST causes a shift in the cubic-tetragonal BST Phase transition peak to a lower temperature. MgO-substituted BST and MgO-mixed phases exhibit homogeneous and broadened BST phase transition peaks. Mg substitution into BST has a significant effect on the grain sife reduction. Dielectric constant and loss is inhanced with decrease MgO dopant.