• Title/Summary/Keyword: Lee O-Young

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PTCR Properties of $BaTiO_3$ Ceramic Variation of Dopant. ($BaTiO_3$ 세라믹스의 PTCR 특성)

  • Kang, Jeong-Min;Cho, Hyun-Moo;Lee, Jong-Deok;Park, Sang-Man;Lee, Young-Hie;Lee, Sung-Gap
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.61-63
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    • 2004
  • PTC Thermistors specimens were fabricated by added $MnO_2$ as donors, and $Nb_2O_5$ as acceptors and sintered $1250^{\circ}C$/2hrs. Average grain size decreased with increased in added $MnO_2$, and increased with added in $Nb_2O_5$. But, appeared liquid phase as $Bi_2O_3$ and $TiO_2$, affect to grain growth. XRD result, peak strength was lowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about $40M{\Omega}$ over, couldn't measured to those resistance and doesn't appear PTCR effect.

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The Dielectric Properties of $BaTiO_3/SrTiO_3$ Heterolayered Thick Films ($BaTiO_3/SrTiO_3$ 이종층 후막의 유전특성)

  • Nam, Sung-Pill;Lee, Sang-Chul;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.58-60
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    • 2004
  • The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated on alumina substrate by screening printing method. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The structural and electrical properties of $BaTiO_3/SrTiO_3$ heterolayered thick films were compared with pure $BaTiO_3$ and $SrTiO_3$ films. The (Ba,Sr)$TiO_3$ phase was appeared at the $BaTiO_3/SrTiO_3$ heterolayered thick films. The thickness of $BaTiO_3/SrTiO_3$ heterolayered thick film, obtained by one printing, was about $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ heterolayered thick films were about 1964, 5.5% at 1KHz, respectively.

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Dielectric Properties of the $BaTiO_3/SrTiO_3$ mutilayered thick tilms by Screen-Printing Method (스크린 프린팅법을 이용한 $BaTiO_3/SrTiO_3$ 이종층 후막의 유전특성)

  • Kwon, Hyun-Yul;Lee, Sang-Chul;Kim, Ji-Heon;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.400-403
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    • 2004
  • The dielectric properties of $BaTiO_3/SrTiO_3$ multilayered thick films with printing times were investigated. $BaTiO_3/SrTiO_3$ thick films were deposited by Screen-printing method on alumina substrates. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode(Pt) for 2hours. The structural and the dielectric properties were investigated for various printing times. The BST phase appeared in all of the $BaTiO_3/SrTiO_3$ mutilayered thick films. The $BaTiO_3/SrTiO_3$ multilayered thick film thickness, obtained by one printings, was $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ multilayered thick film, obtained by five printings, were about 266, 0.8% at 1Mhz, respectively.

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The stuctural and dielectric properties of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics ($BaTiO_{3}+xNb_{2}O_{5}$ 세라믹스의 구조 및 유전특성)

  • Lee, Sang-Chul;Ryu, Ki-Won;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.426-429
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    • 2001
  • The $BaTiO_{3}+xNb_{2}O_{5}$[x=6, 8, 10wt%] ceramics were prepared by conventional mixed oxide method. The structural properties of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics with the sintering temperature and addition of $Nb_{2}O_{5}$ were investigated by XRD and SEM. Increasing the sintering temperature, the $2{\Theta}$ value of BT (110) peak was shifted to the lower degree and intensity of the BN (310) peak was increased. Increasing the addition of $Nb_{2}O_{5}$, the intensity of BN (100) peak was decreased and BN (310), (110) peaks were increased. The grain size of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$ were almost uniform. In the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.

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A Study of Efficient Removal of 2-Methylisoborneol and Geosmin by Pulsed Ultraviolet and Ultrasound (효율적인 2-Methylisoborneol, Geosmin의 제거를 위한 Pulsed UV 공정과 Ultrasound 공정의 비교 연구)

  • Han, Jonghun;Hur, Jiyong;Kim, Kangwook;Lee, Junyoung;Park, Wonseok;Lee, Jongyeol;Her, Namguk
    • Journal of Soil and Groundwater Environment
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    • v.20 no.4
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    • pp.1-7
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    • 2015
  • The degradation of off-flavors which is 2-Methylisoborneol (2-MIB) and geosmin by means of ultrasound (US) and pulsed ultraviolet (PUV) irradiation and its combination with catalyst (wire mesh, wire mesh coated TiO2, and TiO2) and additive (H2O2) were investigated via water system. A combination treatment of TiO2 and H2O2 heterogeneity with US (24 kHz) and PUV (6000 W) has shown improved results in destroying 2-MIB and geosmin, which may be attributed to chain reactions by the enhanced formation of hydroxyl radicals (·OH) through H2O2 dissociation and reactive oxide ions of TiO2 addition. Rapid degradation of off-flavors occurred within 2 min under PUV process with H2O2 100 mg/L (81.5% for 2- MIB; 79.3% for geosmin) and TiO2 100 mg/L (83.7% for 2-MIB; 79.8% for geosmin), while compared with H2O2 100 mg/L (58.4% for 2-MIB; 58.0% for geosmin) and TiO2 100 mg/L (59.2% for 2-MIB; 38.5% for geosmin) within 5 min under US process. Surprisingly, the emphasis was given on the comparison with the same injected energies between PUV and US on degradation efficiency. Based on the injected energy comparison, the US provided better degradation performance under equal input power of 200 kJ with H2O2 100 mg/L, while compared with H2O2 100 mg/L under PUV process. Our findings suggest that US can be more effective compared to PUV for the degradation of off-flavors in aspect of energy consumptions.

A Study on the Dielectric and Pyroelectric Properties of the $Pb({Sn}_{1/2}Nb_{1/2})O_3-PbTiO_3-PhZrO_3$ Ceramics ($Pb({Sn}_{1/2}Nb_{1/2})O_3-PbTiO_3-PhZrO_3$ 세라믹의 유전 및 초전특성에 관한 연구)

  • Ham, Young-Wook;Lee, Neung-Hun;Kim, Yong-Hyuk;Kim, Jin-Soo;Kim, Young-Il
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1119-1121
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    • 1993
  • The PSN-PT-PZ ceramics doped with the Mn-oxide(0.5wt%) were fabricated by the mixed oxide method at 1250($^{\circ}C$) for 2(hr) and then the dielectric and pyroelectric properties were investigated with the compositions. In the 0.05PSN-0.4PT-0.55PZ specimen with 0.5(wt%) $MnO_2$, the pyroelectric coefficient was $6.6{\times}10^{-8}(C/Cm^2^{\circ}C)$, and the figure of merits for pyroelectric current and voltage were $27{\times}10^{-9},\;45{\times}10^{-12}$(C.Cm/J), respectibly.

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The Structural and Electrochemical Properties of Thermally Aged Li[Co0.1Ni0.15Li0.2Mn0.55]O2 Cathodes

  • Park, Yong-Joon;Lee, Ju-Wook;Lee, Young-Gi;Kim, Kwang-Man;Kang, Man-Gu;Lee, Young-Il
    • Bulletin of the Korean Chemical Society
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    • v.28 no.12
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    • pp.2226-2230
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    • 2007
  • As a cathode material of lithium rechargeable batteries, charged Li[Co0.1Ni0.15Li0.2Mn0.55]O2 electrodes, which were aged thermally at 25 oC and 90 oC respectively, were characterized by means of charge/discharger, impedance spectroscopy, and X-ray diffraction. The discharge capacity diminution of the electrodes aged at 25 oC and 90 oC for 1 week was 4% and 23%, respectively. The cell aged at 25 oC was recovered on cycling. However, the capacity loss after ageing at 90 oC was not recovered in a subsequent cycling test, which demonstrates that the reaction occurring during ageing at 90 oC is irreversible. A significant impedance increase of aged electrode at 90 oC is associated with irreversible capacity loss. The structural changes including phase transformation were not detected by XRD analysis, because it could be due to out of detection limit. After ageing, impedance was slightly decreased during subsequent cycling test. It could be explained the cyclic performance of aged sample is stable. The thermal stability was not deteriorated by ageing even at the high temperature of 90 oC.

Electrical Properties of $V_{1.85}W_{0.15}O_5$ Thin Films with Thickness (두께에 따른 $V_{1.85}W_{0.15}O_5$ 박막의 전기적 특성)

  • Lee, Seung-Hwan;Lee, Sung-Gap;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2008.10a
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    • pp.121-122
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    • 2008
  • The films of the vanadium tungsten oxide, $V_{1.85}W_{0.15}O_5$, were grown on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the thin film thickness. As increasing of $V_{1.85}W_{0.15}O_5$ thickness, the grain size, morphology, and crystallinity increased. The dielectric constants of $V_{1.85}W_{0.15}O_5$ thin films deposited at 150nm were 71.11, with a dielectric loss of 0.015, respectively. Also, The $V_{1.85}W_{0.15}O_5$ thin films showed good TCR values of -3.45%/K.

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