• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.7
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• pp.963-971
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• 2022

Water pipeline network in local and metropolitan area is buried underground, by which it is hard to know the degree of pipe aging and leakage. In this study, assuming various sensor combinations installed in the water pipeline network, the optimal algorithm was derived by predicting the water flow rate and pressure through artificial intelligence algorithms such as linear regression and neuro fuzzy analysis to examine the possibility of detecting pipe leakage according to the data combination. In the case of leakage detection through water supply pressure prediction, Neuro fuzzy algorithm was superior to linear regression analysis. In case of leakage detection through water supply flow prediction, flow rate prediction using neuro fuzzy algorithm should be considered first. If flow meter for prediction don't exists, linear regression algorithm should be considered instead for pressure estimation.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.7
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• pp.3301-3318
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• 2016

Online social networks (OSNs) have changed the way people communicate with each other. An OSN usually encourages the participants to provide personal information such as real names, birthdays and educational background to look for and establish friendships among them. Some users are unwilling to reveal personal information on their personal pages due to potential privacy concerns, but their friends may inadvertently reveal that. In this work, we investigate the possibility of leaking personal information on Facebook in an unintentional and involuntary manner. The revealed information may be useful to malicious users for social engineering and spear phishing. We design the inference methods to find birthdays and educational background of Facebook users based on the interactions among friends on Facebook pages and groups, and also leverage J-measure to find the inference rules. The inference improves the finding rate of birthdays from 71.2% to 87.0% with the accuracy of 92.0%, and that of educational background from 75.2% to 91.7% with the accuracy of 86.3%. We also suggest the sanitization strategies to avoid the private information leakage.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.9
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• pp.1108-1119
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• 2016

This paper presents the spectral analysis and radiation pattern of low-frequency electromagnetic(EM) leakage signals according to the fundamental operations of smartphones. The EM leakage signals generated by the activation of four I/O sensor modules such as a touch-screen, a camera, a microphone and a speaker are captured by the commercial near-field magnetic probe with 1cm spatial resolution. The analysis results show that the leakage of the EM wave occurs strongly around the activated I/O sensor modules, AP(Application Processor) and memory modules. Also, the distinguishable frequency characteristic is shown in each spectrum of EM leakage signals.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.26 no.3
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• pp.735-744
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• 2016

Recently, personal information leakage incidents with increased usage of mobile services are increasing. Personal information leakage incidents can have a significant impact on an individual's mobile banking services. Accordingly, we examine relationships among individual's psychological characteristics, intention and behavior regarding compliance in an individual's perception on personal information leakage incidents in mobile banking contexts. In this study, for explaining our research model and understanding with personal psychology and behavior in mobile banking contexts, we adopted two theories, theory of interpersonal behavior and stimulus-response theory. We collected the 55 data using online surveyor and then analyzed structural equation model in order to find causal relationships among research variables. The results of this study should be useful to the mobile banking services companies in promoting service users to follow the information privacy policies.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.343-346
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• 2004

This paper proposes a leakage-suppressed SRAM with dynamic power saying scheme for the future leakage-dominant sub-70-nm technology. By dynamically controlling the common source-line voltage ($V_{SL}$) of sleep cells, the sub-threshold leakage through these sleep cells can be reduced to be 1/10-1/100 due to the reverse body-bias effect, dram-induced barrier lowering (DIBL) and negative $V_{GS}$ effects. Moreover, the bit-ling leakage which mar introduce a fault during the read operation can be completely eliminated in this new SRAM. The dynamic $V_{SL}$ control can also reduce the bit-line swing during the write so that the dynamic power in write can be reduced. This new SRAM was fabricated in 0.35-${\mu}m$ CMOS process and more than $30\%$ of dynamic power saying is experimentally verified in the measurement. The leakage suppression scheme is expected to be able to reduce more than $90\%$ of total SRAM power in the future leakage-dominant 70-nm process.

• Convergence Security Journal
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• v.8 no.4
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• pp.1-8
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• 2008

Not only the recent hacking techniques are becoming more malicious with the sophisticated technology but also its consequences are bringing more damages as the broadband Internet is growing rapidly. These may include invasion of information leakage, or identity theft over the internet. Its intent is very destructive which can result in invasion of information leakage, hacking, one of the most disturbing problems on the net. This thesis describes the technology of how you can effectively analyze and detect these kind of E-Mail malicious codes. This research explains how we can cope with malicious code more efficiently by detection method.

• Journal of Power Electronics
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• v.17 no.4
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• pp.905-913
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• 2017

To enhance the zero-voltage switching (ZVS) range and power density of the phase-shift full-bridge (PSFB) ZVS converters used in geophysical exploration, an additional resonant inductor is used as a leakage inductance and a blocking capacitor which is equivalent to interlayer capacitance is integrated into a novel integrated inductor-capacitor-transformer (L-C-T). The leakage inductance and equivalent interlayer capacitance of the novel integrated L-C-T are difficult to determine by conventional methods. To address this issue, this paper presents accurate and efficient methods to compute the leakage inductance and equivalent interlayer capacitance. Moreover, the accuracy of this methodology, which is based on electromagnetic energy and Lebedev's method, is verified by an experimental analysis and a finite element analysis (FEA). Taking the problems of the novel integrated L-C-T into consideration, the losses of the integrated L-C-T are analyzed and the temperature rise of the integrated L-C-T is determined by FEA. Finally, a PSFB ZVS converter prototype with the novel integrated L-C-T is designed and tested.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.460-462
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• 2004

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. There are several leakage current mechanisms in which the stored data disappears. The mechanisms of data disappear is as follow, 1 )Junction leakage current between the junction, 2) Junction leakage current from the capacitor node contact, 3)Sub-threshold leakage current if the transfer transistor is affected by gate etch damage etc. In this paper we showed the plasma edge damage effect to find out data retention time effectiveness. First we measured the transistor characteristics of forward and reverse bias. And junction leakage characteristics are measured with/without plasma damage by HP4145. Finally, we showed the comparison TRET with etch damage, damage_cure_RTP and hydrogen_treatment. As a result, hydrogen_treatment is superior than any other method in a curing plasma etch damage side.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.595-600
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• 2016

In this paper, the oxide currents of thin silicon oxides is investigated. The oxide currents associated with the on time of applied voltage were used to measure the distribution of voltage stress induced traps in thin silicon oxide films. The stress induced leakage currents were due to the charging and discharging of traps generated by stress voltage in the silicon oxides. The stress induced leakage current will affect data retention in memory devices. The oxide current for the thickness dependence of stress current and stress induced leakage currents has been measured in oxides with thicknesses between $109{\AA}$, $190{\AA}$, $387{\AA}$, and $818{\AA}$ which have the gate area $10^{-3}cm^2$. The oxide currents will affect data retention and the stress current, stress induced leakage current is used to estimate to fundamental limitations on oxide thicknesses.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.11
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• pp.572-576
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• 2004

Various devices for diagnosing arrester soundness are suggested, and most of them simply measure magnitude of leakage current. However, such kind of devices do not provide detailed information needed for the diagnosis. In this study, we designed and fabricated a new arrester analyzer by means of measuring the magnitude, the phase vs. wave height and the harmonics of total leakage currents. The analyzer is composed of a current detector, an optical linker, and a main device operated by a microprocessor. The main device is connected with leakage current detector optically not to be influenced by electromagnetic interference. The analyzer developed measures only total leakage currents, but analyzes most parameters needed for the arrester diagnostics.