• Journal of Power Electronics
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• 제16권6호
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• pp.2202-2211
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• 2016

In certain applications, such as IPT-based EV charger (IPTEC), any variation in alignment and distance between pickup and charger primary leads to a change in leakage and magnetic impedance magnitudes. The power transmission capacity is not always at the maximum level because of these variations. This study proposes a new low-cost tracking method that achieves the Maximum Inductive Power Transmission Capacity (MIPTC). Furthermore, in the proposed method, the exchange of information between load and source is not required. For an application such as IPTEC, the load detected by the IPTEC varies continuously with time because of the change in state of the charge. This load variation causes a significant variation in IPT resonant circuit voltage gain. However, the optimized charging output voltage should be kept constant. From the analysis of the behavior of the IPT circuit at different working frequencies and load conditions, a MIPTC operation point that is independent of load condition can be identified. Finally, the experimental results of a developed prototype IPT circuit test show the performance of the proposed method.

• ETRI Journal
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• 제39권6호
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• pp.794-802
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• 2017

In this paper, a wireless powered communication network (WPCN) consisting of a hybrid access point (H-AP) and multiple user equipment (UE), all of which operate in full-duplex (FD), is described. We first propose a transceiver structure that enables FD operation of each UE to simultaneously receive energy in the downlink (DL) and transmit information in the uplink (UL). We then provide an energy usage model in the proposed UE transceiver that accounts for the energy leakage from the transmit chain to the receive chain. It is shown that the throughput of an FD WPCN using the proposed FD UE (FD-WPCN-FD) can be maximized by optimal allocation of the UL transmission time to the UE by solving a convex optimization problem. Simulation results reveal that the use of the proposed FD UE efficiently improves the throughput of a WPCN with a practical self-interference cancellation capability at the H-AP. Compared to the WPCN with FD H-AP and half-duplex (HD) UE, FD-WPCN-FD achieved an 18% throughput gain. In addition, the throughput of FD-WPCN-FD was shown to be 25% greater than that of WPCN in which an H-AP and UE operated in HD.

• 대한전자공학회논문지SD
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• 제40권7호
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• pp.481-485
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• 2003

25㎛ 두께의 폴리이미드 박핀 기판을 glass 기판에 부착하여 최대 온도 150℃에서 비정질 실리콘 TFT를 제작하였다. 본 논문은 plastic 기판 위에 TFT가 제작되는 공정 절차를 요약하고 glass 위에 제작된 TFT와 ON/OFF 전달특성과 전계효과 이동도를 서로 비교해 보았다. a-SiN:H 코팅층은 plastic 기판의 표면 거칠기를 감소시키는 중요한 역할을 하여 TFT의 누설전류를 감소시키고 전계효과 이동도를 증가시켰다. 따라서 a-SiN:H 코팅층을 이용하여 plastic 기판에 양철의 TFT를 제작하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권3호
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• pp.255-260
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• 2016

In this paper, a full-wave rectifier (FWR) with a simple vibration detector suitable for use with vibrational energy harvesting systems is presented. Conventional active FWRs where active diodes are used to reduce the diode voltage drop and increase the system efficiency are usually powered from the output. Output-powered FWRs exhibit relatively high efficiencies because the comparators used in active diodes are powered from the stable output voltage. Nevertheless, a major drawback is that these FWRs consume power from the output storage capacitor even when the system is not harvesting any energy. To overcome the problem, a technique using a simple vibration detector consisting of a peak detector and a level converter is proposed. The vibration detector detects whether vibrational energy exists or not in the input terminal and disables the comparators when there is no vibrational energy. The proposed FWR with the vibration detector is designed using a $0.35-{\mu}m$ CMOS process. Simulation results have verified the effectiveness of the proposed scheme. By using the proposed vibration detector, a decrease in leakage current by approximately 67,000 times can be achieved after the vibration disappears.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.797-801
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• 2014

This research presented the concept of employing the punch-through diode triggered SCRs (PTTSCR) for low voltage ESD applications such as transient voltage suppression (TVS) devices. In order to demonstrate the better electrical properties, various traditional ESD protection devices, including a silicon controlled rectifier (SCR) and Zener diode, were simulated and analyzed by using the TCAD simulation software. The simulation result demonstrates that the novel PTTSCR device has better performance in responding to ESD properties, including DC dynamic resistance and capacitance, compared to SCR and Zener diode. Furthermore, the proposed PTTSCR device has a low reverse leakage current that is below $10^{-12}$ A, a low capacitance of $0.07fF/mm^2$, and low triggering voltage of 8.5 V at $5.6{\times}10^{-5}$ A. The typical properties couple with the holding voltage of 4.8 V, while the novel PTTSCR device is compatible for protecting the low voltage, high speed ESD protection applications. It proves to be good candidates as ultra-low capacitance TVS devices.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권1호
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• pp.58-64
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• 2013

In this paper, two new flip-flop circuits with PCRAM latches that are FF-1 and FF-2, respectively, are proposed not to waste leakage during sleep time. Unlike the FF-1 circuit that has a normal PCRAM latch, the FF-2 circuit has a selective write latch that can reduce the switching activity in writing operation to save switching power at sleep-in moment. Moreover, a sequential sleep-in control is proposed to reduce the rush current peak that is observed at the sleep-in moment. From the simulation of storing '000000' to the PCRAM latch, we could verify that the proposed FF-1 and FF-2 consume smaller power than the conventional 45-nm FF if the sleep time is longer than $465{\mu}s$ and $95{\mu}s$, respectively, at $125^{\circ}C$. For the rush current peak, the sequential sleep-in control could reduce the current peak as much as 77%.

• 한국안전학회지
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• 제27권3호
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• pp.111-116
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• 2012

This study is about the quantitative safety assessment of hydrogen station in Korea operating with on-site type. This was written by background information that before qualitative safety assessment to write. For the qualitative safety assessment method, the study used FMEA(failure mode & effect analysis) and HAZOP(hazard & operability), and adopted the FTA(fault tree analysis) as the quantitative safety assessment method. To write the FTA, we wrote FT by Top event that hydrogen leakage can be called most serious accident of hydrogen station. Each base event collect reliability data by reliability data handbook, THERP-HRA and estimation of the engineering. Assessment looked at the high frequency and the possible risk through Gate, Importance, m.cutsets analysis.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2007년도 동계학술발표대회 논문집
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• pp.612-617
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• 2007

Water meter frost in winter is a nuisance to the water administration and citizen as well. It causes stop of water supply, possibility of accident due to leakage freezing, and additional official work to change frost water meters. This study was carried out to give some basic information of water meter frost condition, to verify the effect of frost protection devices such as lagging vinyl cover, electric heater, and meter pit using subterranean heat. Nearly half of the number of the water meter frost happens in old apartment house with outer corridor, and temperature of the meter box was measured in that kind of apartment house, comparing with atmosphere temperature. The capability of three kinds of lagging vinyl cover was investigated by measuring the inside temperature of the insulated box. Also the capability of existing meter pits and new meter pits using subterranean heat was compared by measuring the inside temperature of the pits. One of the result is that the inside temperature of meter pits using subterranean heat was higher than that of the existing ones, and deeper pit causes higher inside temperature in case of using subterranean heat.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.13-16
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• 2012

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.