• Nuclear Engineering and Technology
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• 제53권11호
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• pp.3824-3836
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• 2021

Workers' safety from radiological exposure in a 1 ton/day capacity spent resin treatment facility was evaluated according to the operating times and outflow rate due to process related leakages. The conservative annual dose based on the operating times of the workers exceeded the dose limit by at least 7.38E+01 mSv for close work. The realistic dose range was derived as 1.62E+01 mSv-6.60E+01 mSv. The conservative and realistic annual doses for remote workers were 1.33E+01 mSv and 3.00E+00 mSv respectively, which were less than the dose limit. The MWR was identified as the major contributor to worker exposure within the 1 h period required for removal of radioactive materials. The dose considering both internal and external exposures without APF was derived to be 1.92E+01 mSv for conservative evaluation and 4.00E+00 mSv for realistic evaluation. Furthermore, the dose with APF was derived as 7.27E-01 mSv for conservative evaluation and 1.51E-01 mSv for realistic evaluation. Considering the APF for leakage from all parts, the dose range was derived as 1.25E+00 mSv-2.03E+00 mSv for conservative evaluation and 2.61E-01 mSv-4.23E-01 mSv for realistic evaluation. Hence, it was confirmed that radiological safety was secured in the event of a leakage accident.

• 전기학회논문지
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• 제66권3호
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• pp.540-544
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• 2017

In this study, we analyzed the effects of TID(Total Ionizing Dese) and TREE(Transient Radiation Effects on Electronics) on nMOSFET and pMOSFET fabricated by 0.18um CMOS process. The size of nMOSFET and pMOSFET is 100um/1um(W/L). The TID test was conducted up to 1 Mrad(Si) with a gamma-ray(Co-60). During the TID test, the nMOSFET generated leakage current proportional to the applied dose, but that of the pMOSFET was remained in a steady state. The TREE test was conducted at TEST LINAC in Pohang Accelerator Laboratory with a maximum dose-rate of $3.16{\times}10^8rad(si)/s$. In that test nMOESFET generated a large amount of photocurrent at a maximum of $3.16{\times}10^8rad(si)/s$. Whereas, pMOSFETs showed high TREE immunity with a little amount of photocurrent at the same dose rate. Based on the results of this experiment, we will progress the research of the radiation hardening for CMOS unit devices.

• 대한전기학회논문지
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• 제41권2호
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• pp.170-177
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• 1992

Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.

• 전자공학회논문지D
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• 제34D권9호
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• pp.43-49
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• 1997

The dependence of the electrical properties in planar MQW - APD & pn, and p - i - n photodiode implanted with oxygen on the annealing emperatures and ion dose has been investigated. The oxygen implantation was performed for inter-device isolation. The leakage current of as-impanted p-i-n photodiode obtained was less than 50 nA. An annelaing temperature dependence study shows an abrupt increase of leakge current at 600.deg.C for all devices under study. This indicates that donor complex centers introduced by the chemical activity of oxygen increase with increasing annelaing temperatures. Furthermore, leakage current was highly correlated with oxygen dose due to th eimplanted related defects.

• 한국콘텐츠학회논문지
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• 제13권11호
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• pp.768-777
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• 2013

이 연구는 CT(computed tomography)검사 중 발생하는 방사선 누설선량(radiation leakage)으로부터 종사자 및 일반인의 피폭을 최소화하기 위한 것이다. 부산, 경남에 위치한 대학병원 7곳과 종합전문요양병원 4곳의 CT실을 대상으로 하였다. 누설선량 측정 장소로는 1) 조정실 내 감시창 벽면의 지면으로부터 3m 높이 2) 조정실 내 특정 지점 3) 조정실 내 종사자 출입문 4) 환자 출입문을 선정하였다. 그 결과 M병원의 종사자 출입문에서 가장 높은 누설선량이 나타났다. 각각의 측정값은 고전적 방법에 의한 주당 최대 누설선량으로 환산하였다. 그 결과 1) $5.97{\pm}0.23$, 2) $0.50{\pm}0.02$, 3) $10.00{\pm}0.11$, 4) $2.37{\pm}0.47$ mR/week로 주당 최대 누설선량 허용치(<100 mR/week)이하였다. 하지만 측정 최대 누설선량을 기록한 M병원의 조정실 내 종사자 출입문을 실험적 방법으로 계산한 결과 $118.31{\pm}17.72$ mR/week(>100 mR/week)로 나타났다. 조정실 지면으로부터 3 m 이상의 높이에서의 누설선량은 조정실내부에 영향을 끼쳤다(p<0.05). 따라서, 누설선량의 피해를 줄이기 위해, 주당 최대 누설선량 산출 방법에 대한 개선과, 조정실 차폐벽의 차폐체를 3 m 이상으로 할 것을 제안 한다.

• Journal of Electrical Engineering and Technology
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• 제12권4호
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• pp.1619-1626
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• 2017

Electronic components that are used in high-level radiation environment require a semiconductor device having a radiation-hardened characteristic. In this paper, we proposed a radiation-hardened I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistors) using a layout modification technique only. The proposed I-gate n-MOSFET structure is modified as an I-shaped gate poly in order to mitigate a radiation-induced leakage current in the standard n-MOSFET structure. For verification of its radiation-hardened characteristic, the M&S (Modeling and Simulation) of the 3D (3-Dimension) structure is performed by TCAD (Technology Computer Aided Design) tool. In addition, we carried out an evaluation test using a $Co^{60}$ gamma-ray source of 10kGy(Si)/h. As a result, we have confirmed the radiation-hardened level up to a total ionizing dose of 20kGy(Si).

• 전기전자학회논문지
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• 제27권3호
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• pp.303-307
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• 2023

본 논문은 Buried Channel Array Transistor(BCAT) 소자의 Oxide 내부에 Total Ionizing Dose(TID) effects으로 인한 Electron-Hole Pair의 생성이 유도되어, Oxide 계면의 Hole Trap Charge의 증가에 따른 누설전류의 증가와 문턱 전압의 변화를 기존에 제안한 Partial Isolation Buried Channel Array Transistor(Pi-BCAT)구조와 비교 시뮬레이션 하여, Pi-BCAT 소자의 증가한 Oxide 면적과 상관없이 변화한 누설전류와 문턱 전압에서의 특성이 비대칭 도핑 BCAT 구조보다 우수함을 보여 준다.

• Journal of Chest Surgery
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• 제20권4호
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• pp.643-654
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• 1987

The effect of prostacyclin[PGI, ] on myocardial preservation during global ischemia was studied in the isolating working rabbit heart model. Forty hearts underwent a 15 minute period of retrograde nonworking perfusion with Krebs-Henseleit buffer solution [37*C] and were switched over to the working mode for 15 minutes. After baseline measurement of heart rate, peak aortic pressure, aortic flow, and coronary flow, all hearts were subjected to 60 minutes of ischemic arrest at 10*C induced with St. Thomas Hospital cardioplegic solution: Group I had single dose cardioplegia, Croup II double dose, Croup III oxygenated double dose, and Group IV single dose with PCI, infusion [10ng/min./gm heart weight]. Hearts were then revived with 15 minute period of nonworking reperfusion at normothermia, followed by 30 minutes of working perfusion. Repeat measurements of cardiac function were obtained and expressed as a percent of the preischemic baseline values. Oxygen content of arterial perfusate and coronary effluent was measured by designed time interval. Leakage of creatine kinase was determined during post-ischemic reperfusion period. Finally wet hearts were weighed and placed in 120*C oven for 36 hours for measurement of dry weight. In the PGI, treated group [IV], heart rate increased consistently throughout the period of reperfusion from 100*5.0% [p<0.001] to 107*6.2% [p<0.001]. The percent recovery of aortic flow showed 95*5.7% [p<0.001] at the first 3 minute and full recovery through the subsequent time. Coronary flow was augmented significantly in the 3 minute [96*6.2%, p<0.001] and then sustained above baseline values. Among the Croup I, II, and III, all hemodynamic values were significantly below preischemic levels. PGI2 relatively increased oxygen delivery [1.22*0.19ml/min, p<0.001] and myocardial oxygen consumption [0.90*0.13ml/min, p<0.001] during reperfusion period. Leakage of creatine kinase in the PGI2 group was 9.3*1.58IU/15min [p<0.001]. This was significantly lower than Group I [33.0*2.68 IU/15min]. The water content of PCI2 treated hearts [81*0.9%, p<0.001] was also lower than the other groups.

• Journal of Radiation Protection and Research
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• 제43권4호
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• pp.131-136
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• 2018

Background: We investigated the current characteristics of a thin-film Ag electrode on a chemical vapor deposition (CVD) diamond. The CVD diamond is widely recognized as a radiation detection material because of its high tolerance against high radiation, stable response to various dose rates, and good sensitivity. Additionally, thin-film Ag has been widely used as an electrode with high electrical conductivity. Materials and Methods: Considering these properties, the thin-film Ag electrode was deposited onto CVD diamonds with varied deposition thicknesses (${\fallingdotseq}50/98/152/257nm$); subsequently, the surface thickness, surface roughness, leakage current, and photo-current were characterized. Results and Discussion: The leakage current was found to be very low, and the photo-current output signal was observed as stable for a deposited film thickness of 98 nm; at this thickness, a uniform and constant surface roughness of the deposited thin-film Ag electrode were obtained. Conclusion: We found that a CVD diamond radiation detector with a thin-film Ag electrode deposition thickness close to 100 nm exhibited minimal leakage current and yielded a highly stable output signal.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 추계학술대회
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• pp.713-716
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• 2013

전체 채널 길이는 같지만 드레인과 게이트사이의 진성영역 길이(Lin), 드레인 및 소스의 불순물 농도, 유전율, 유전체 두께가 다른 N-채널 Tunneling FET의 특성을 비교 분석하였다. 사용된 소자는 SOI 구조의 N-채널 Tunneling FET이다. 진성영역 길이는 30~70nm, 드레인 dose 농도는 $2{\times}10^{12}cm^{-2}{\sim}2{\times}10^{15}cm^{-2}$, 소스 dose 농도는 $1{\times}10^{14}cm^{-2}{\sim}3{\times}10^{15}cm^{-2}$, 유전율은 3.9~29이고, 유전체 두께는 3~9nm이다. 소자 성능 지수는 Subthreshold slope(S-slope), On/off 전류비, 누설전류이다. 시뮬레이션 결과 진성영역 길이가 길며 드레인 농도가 낮을수록 누설전류가 감소한 것을 알 수 있었다. S-slope은 소스의 불순물 농도와 유전율이 높으며 유전체 두께는 얇을수록 작은 것을 알 수 있었다. 누설전류와 S-slope을 고려하면 N-채널 TFET 소자 설계 시 진성영역 폭이 넓으며 드레인의 불순물 농도는 낮고, 소스 농도와 유전율이 높으며 유전체 두께는 얇게 하는 것이 바람직하다.