• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.2
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• pp.66-69
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• 2003

Various semiconductor nanowires such as GaN, GaP, InP, Si$_3$N$_4$, SiO$_2$/Si, and SiC were coated conformally with aluminum oxide (Al$_2$O$_3$) layers by atomic layer deposition (ALD) using trimethylaluminum (TMA) and distilled water ($H_2O$) at a temperature of 20$0^{\circ}C$. Transmission electron microscopy (TEM) revealed that A1203 cylindrical shells conformally coat the semiconductor nanowires. This study suggests that the ALD of $Al_2$O$_3$ on nanowires is a promising method for preparing cylindrical dielectric shells for coaxially gated nanowire field-effect transistors.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2420-2424
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• 2009

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $Al_2O_3/p-Si$ structures. The $Al_2O_3$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. Trimethylaluminum [$Al(CH_3)_3$, TMA] and $H_2O$ were used as the aluminum and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TMA pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $Al_2O_3$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.625-630
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• 2017

ZnS was chemically deposited as a buffer layer alternative to CdS, for use as a Cd-free buffer layer in $Cu(In_{1-x}Ga_x)Se_2$ (CIGS) solar cells. The deposition of a thin film of ZnS was carried out by chemical bath deposition, following which the structural and optical properties of the ZnS layer were studied. For the experiments, zinc sulfate hepta-hydrate ($ZnSO_4{\cdot}7H_2O$), thiourea ($SC(NH_2)_2$), and ammonia ($NH_4OH$) were used as the reacting agents. The mole concentrations of $ZnSO_4$ and $SC(NH_2)_2$ were fixed at 0.03 M and 0.8 M, respectively, while that of ammonia, which acts as a complexing agent, was varied from 0.3 M to 3.5 M. By varying the mole concentration of ammonia, optimal values for parameters like optical transmission, deposition rate, and surface morphology were determined. For the fixed mole concentrations of $0.03M\;ZnSO_4{\cdot}7H_2O$ and $0.8M\;SC(NH_2)_2$, it was established that 3.0 M of ammonia could provide optimal values of the deposition rate (5.5 nm/min), average optical transmittance (81%), and energy band gap (3.81 eV), rendering the chemically deposited ZnS suitable for use as a Cd-free buffer layer in CIGS solar cells.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.263-268
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• 2003

Precise thickness control and excellent properties of silicon nitride thin films are essential for the next-generation semiconductor and display devices. In this study, silicon nitride thin films were deposited by batch-type atomic layer deposition (ALD) method using $SiC1_4$ and $NH_3$ as the precursors at temperatures ranging from 500 to $600^{\circ}C$. Thin film deposition using a batch-type ALD reactor was a layer-by-layer atomic growth by self-limiting surface reactions, and the thickness of the deposited film can be controlled by the number of deposition cycles. The silicon nitride thin films deposited by ALD method exhibited composition, refractive index and wet etch rate similar with those of the thin films deposited by low-pressure chemical vapor deposition method at $760^{\circ}C$. The addition of pyridine mixed with precursors increased deposition rate by 50%, however, the films deposited with pyridine was readily oxidized owing to its unstable structure, which is unsuitable for the application to semiconductor or display devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.484-488
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• 1997

BSCCO thin film is fabricated cia both processes of co-deposition and layer-by-layer deposition at an ultralow growth rate using ion beam sputtering method. The adsorption of Bi atom and the appearance of Bi-2212 phase shows large differance between both processes. It is found that the resident time of Bi vapor species on the surface of the substrate strongly dominates the film composition and the formation of the structure.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.159-163
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• 2003

ln this work, we studied electrical characteristics and leakage current mechanism of $Ta_2O_{5}$ MOS(Metal-Oxide-Semiconductor) devices. $Ta_2O_{5}$ thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 $^{\circ}C$. The structures of the $Ta_2O_{5}$ thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of $Ta_2O_{5}$ is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of $Ta_2O_{5}$ thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456${\times}10^{14}$ ($\omega{\cdot}cm$ at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.41-46
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• 2002

In this work, we studied electrical characteristics and leakage current mechanism of Au/$Ta_2O_5$/Si metal-oxide-semiconductor (MOS) devices. $Ta_2O_5$ thin film (63nm) was deposited by atomic layer deposition (ALD) method at temperature of $235^{\circ}C$. The structures of the $Ta_2O_5$ thin films were examined by X-Ray Diffraction (XRD). From XRD, the structure of $Ta_2O_5$ was single phase and orthorhombic. From capacitance-voltage (C-V) analysis, the dielectric constant was 19.4. The temperature dependence of current-voltage (I-V) characteristics of $Ta_2O_5$ thin film was studied from 300 to 423 K. In ohmic region (<0.5 MVcm${-1}$), the resistivity was $2.4056{\times}10^{14}({\Omega}cm)$ at 348 K. The Schottky emission is dominant in lower temperature range from 300 to 323 K and Poole-Frenkel emission dominant in higher temperature range from 348 to 423 K.

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.37-42
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• 2013

Tristructural-isotropic (TRISO)-coated particles were fabricated by a fluidized-bed chemical vapor deposition (FBCVD) method for use in a very high temperature gas-cooled reactor (VHTR). ZrC as a constituent layer of TRISO coating layers was deposited by a chloride process using $ZrCl_4$ and $CH_4$ source gases in a temperature range of $1400^{\circ}C$ and $1550^{\circ}C$. The change in the microstructure of ZrC depending on the deposition temperature and its effect on the hardness were evaluated. As the deposition temperature increased to $1500^{\circ}C$, the grain size of the ZrC increased and the hardness of the ZrC decreased according to the Hall-Petch relationship. However, at $1550^{\circ}C$, the ZrC layer was highly non-stoichiometric and carbon-rich and did not obey the Hall-Petch relationship in spite of the decrease of the grain size. A considerable amount of pyrolytic carbon at the grain boundaries of the ZrC as well as coarse granular pyrolytic carbon were locally distributed in the ZrC layer deposited at $1550^{\circ}C$. Therefore, the hardness decreased largely due to the formation of a large amount of pyrolytic carbon in the ZrC layer.

• Journal of the Korean institute of surface engineering
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• v.55 no.6
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• pp.328-341
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• 2022

Area selective atomic layer deposition (AS-ALD) is a bottom-up nanopattern fabrication method that can grow the ALD films only on the desired substrate areas without using photolithography and etching processes. Particularly, AS-ALD has attracted great attention in the semiconductor manufacturing process due to its advantage in reducing edge placement error by fabricating self-aligned patterns. In this paper, the basic principles and characteristics of AS-ALD are described. In addition, various approaches for achieving AS-ALD with excellent selectivity were comprehensively reviewed. Finally, the technology development to overcome the selectivity limit of AS-ALD was introduced along with future prospects.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.6
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• pp.567-572
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• 2013

In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.