Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Area selective atomic layer deposition via surface reaction engineering: a review

표면 반응 제어를 통한 영역 선택적 원자층 증착법 연구 동향

  • Ko, Eun-Chong (Department of Materials Science and Engineering, Seoul National University of Science and Technology) ;
  • Ahn, Ji Sang (Department of Materials Science and Engineering, Seoul National University of Science and Technology) ;
  • Han, Jeong Hwan (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
  • 고은총 (서울과학기술대학교 신소재공학과) ;
  • 안지상 (서울과학기술대학교 신소재공학과) ;
  • 한정환 (서울과학기술대학교 신소재공학과)
  • Received : 2022.11.21
  • Accepted : 2022.11.24
  • Published : 2022.12.31
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Abstract

Area selective atomic layer deposition (AS-ALD) is a bottom-up nanopattern fabrication method that can grow the ALD films only on the desired substrate areas without using photolithography and etching processes. Particularly, AS-ALD has attracted great attention in the semiconductor manufacturing process due to its advantage in reducing edge placement error by fabricating self-aligned patterns. In this paper, the basic principles and characteristics of AS-ALD are described. In addition, various approaches for achieving AS-ALD with excellent selectivity were comprehensively reviewed. Finally, the technology development to overcome the selectivity limit of AS-ALD was introduced along with future prospects.

Keywords

Acknowledgement

이 논문은 2022년도 정부(산업통상자원부)의 재원으로 한국산업기술진흥원의 지원을 받아 수행된 연구임 (P0008458, 2022년 산업혁신인재성장지원사업)

References

  1. R. W. Johnson, A. Hultqvist, S. F. Bent, A brief review of atomic layer deposition: from fundamentals to applications, Mater. Today, 17 (2014) 236-246. https://doi.org/10.1016/j.mattod.2014.04.026
  2. A. J. M. Mackus, A. A. Bol, W. M. M. Kessels, The use of atomic layer deposition in advanced nanopatterning, Nanoscale, 6 (2014) 10941-10960. https://doi.org/10.1039/C4NR01954G
  3. R. Clark, Perspective: New process technologies required for future devices and scaling, APL. Mater., 6 (2018) 058203. https://doi.org/10.1063/1.5026805
  4. A. Mameli, Selective atomic layer deposition and etching of oxides, Technische Universiteit, Eindhoven (2018) 7-10.
  5. N. Pinna, M. Knez, Atomic layer deposition of nanostructured materials, Wiley-VCH verlag GmbH & Co KGaA, Weinheim (2012).
  6. K. Cao, J. Cai, X. Liu, R. Chen, Review Article: Catalysts design and synthesis via selective atomic layer deposition, J. Vac. Sci. Tech. A, 36 (2018) 010801. https://doi.org/10.1116/1.5000587
  7. R. Chen, H. Kim, P.C. McIntyre, S.F. Bent, Self-assembled monolayer resist for atomic layer deposition of HfO2 and ZrO2 high-k gate dielectrics, Appl. Phys. Lett., 84 (2004) 4017. https://doi.org/10.1063/1.1751211
  8. J. Hong, D. W. Porter, R. Sreenivasan, P.C. McIntyre, S.F. Bent, ALD resist formed by vapor-deposited self-assembled monolayers, Langmuir, 23 (2007) 1160-1165. https://doi.org/10.1021/la0606401
  9. M. H. Park, Y. J. Jang, H. M. S. Suh, M. M. Sung, Selective atomic layer deposition of titanium oxide on patterned self-assembled monolayers formed by microcontact printing, Langmuir, 20 (2004) 2257-2260. https://doi.org/10.1021/la035760c
  10. J. Liu, Y. Mao, E. Lan, D.R. Banatao, G.J. Forse, J. Lu, H.O. Blom, T.O. Yeates, B. Dunn, J.P. Chang, Generation of oxide nanopatterns by combining self-assembly of S-layer proteins and area-selective atomic layer deposition, J. Am. Chem. Soc., 130 (2008) 16908-16913. https://doi.org/10.1021/ja803186e
  11. E. Farm, M. Kemell, M. Ritala, M. Leskela, Selective-area atomic layer deposition using poly(methyl methacrylate) films as mask layers, J. Phys. Chem. C, 112 (2008) 15791-15795. https://doi.org/10.1021/jp803872s
  12. A. J. M. Mackus, M. J. M. Merkx, W. M. M. Kessels, From the bottom-up: toward area-selective atomic layer deposition with high selectivity, Chem. Mater., 31 (2019) 2-12. https://doi.org/10.1021/acs.chemmater.8b03454
  13. A. Ulman, Formation and structure of self-assembled monolayers, Chem. Rev, 96 (1996) 1533. https://doi.org/10.1021/cr9502357
  14. R. Chen, H. Kim, P.C. McIntyre, D.W. Porter, S.F. Bent, Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification, Appl. Phys. Lett., 86 (2005) 13.
  15. K. J. Park, J. M. Doub, T. Gougousi, G. N. Parsons, Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition, Appl. Phys. Lett., 86 (2005) 051903. https://doi.org/10.1063/1.1852079
  16. K. Cao, Q. Zhu, B. Shan, R. Chen, Controlled synthesis of Pd/Pt core shell nanoparticles using area-selective atomic layer deposition, Sci. Rep., 5 (2015) 847.
  17. E. Farm, M. Kemell, M. Ritala, M. Leskela, Selective-area atomic layer deposition using poly(vinyl Pyrrolidone) as a passivation layer, J. Electrochem. Soc., 157 (2010) K10. https://doi.org/10.1149/1.3250936
  18. A. Sinha, D. W. Hess, C. L. Henderson, Area selective atomic layer deposition of titanium dioxide: effect of precursor chemistry, J. Vac. Sci. Tech. B, 24 (2006) 2523. https://doi.org/10.1116/1.2359728
  19. V. Suresh, M. S. Huang, M. P. Srinivasan, S. Krishnamoorthy, In situ synthesis of high density sub-50 nm ZnO nanopatterned arrays using diblock copolymer templates, ACS. Appl. Mater. Interfaces, 5 (2013) 5727-5732. https://doi.org/10.1021/am401189p
  20. X. Jiang, S. F. Bent, Area-selective atomic layer deposition of platinum on YSZ substates using microcontact printed SAMs, J. Electrochem. Soc., 154 (2007) D648. https://doi.org/10.1149/1.2789301
  21. H. B. R. Lee, J. Kim, H. Kim, W. H. Kim, J. W. Lee, I. Hwang, Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt, J. Korean. Phys. Soc., 56 (2010) 104. https://doi.org/10.3938/jkps.56.104
  22. R. H. A. Ras, E. Sahramo, J. Malm, J. Raula, M. Karppinen, Blocking the lateral film growth at the nanoecale in area-selective atomic layer deposition, J. Am. Chem. Soc. 130 (2008) 11252-11253. https://doi.org/10.1021/ja803471g
  23. J. Yabrough, A. B. Shearer, S. F. Bent, Next generation nanopatterning using small molecule inhibitors for area-selective atomic layer deposition J. Vac. Sci. Technol. A, 39 (2021) 021002. https://doi.org/10.1116/6.0000840
  24. A. Y. Gil, J. A. Libera, J. W. Elam, Modulation of the growth per cycle in atomic layer deposition using reversible surface functionalization, Chem. Mater., 25 (2013) 4849-4860. https://doi.org/10.1021/cm4029098
  25. R. Khan, B. Shong, B. G. Ko, J. K. Lee, H. Lee, J. Y. Park, I.K. Oh, S. S. Raya, H. M. Hong, K.B.Chung, E. J. Luber, Y.S. Kim, C.H. Lee, W.H. Kim, H.B.R. Lee, Area-selective atomic layer deposition using Si precursors as inhibitors, Chem. Mater, 30 (2018) 7603-7610. https://doi.org/10.1021/acs.chemmater.8b02774
  26. A. Mameli, Y. Kuang, M. Aghaee, C.K. Ande, B. Karasulu, M. Creatore, A.J.M Mackus, W.M.M. Kessels, F. Roozeboom, Area-selective atomic layer deposition of I2O3:H using a µ-plasma printer for local area activation, Chem. Mater, 29 (2017) 921925.
  27. S. E. Atanasov, B. Kalanyan, G. N. Parsons, Inherent substrate-dependent growth initiation and selective-area atomic layer deposition of TiO2 using "water-free" metal-halide/metal alkoxide reactants, J. Vac. Sci. Technol. A, 34 (2016) 01A148. https://doi.org/10.1116/1.4938481
  28. D. Dick, J. B. Ballard, R. C. Longo, J. N. Randall, K. Cho, Y. J. Chabal, Toward selective ultra-high-vacuum atomic layer deposition of metal oxides on Si(100), J. Phys. Chem. C, 120 (2016) 24213-24223. https://doi.org/10.1021/acs.jpcc.6b08130
  29. Q. Tao, G. Jursich, C. G. Takoudis, Selective atomic layer deposition of HfO2 on copper patterned silicon substrates, Appl. Phys. Lett, 96 (2010) 192105. https://doi.org/10.1063/1.3428771
  30. S. K. Selvaraj, J. Parulekar, C. G. Takoudis, Selective atomic layer deposition of zirconia on copper patterned silicon substrates using ethanol as oxygen source as well as copper reductant, J. Vac. Sci. Technol. A, 32 (2014) 010601.
  31. J. Kwon, M. saly, M. D. Halls, R. K. Kanjolia, Y. J. Chabal, Substrate selectivity of (tBu-Allyl)Co(CO)3 during thermal atomic layer deposition of cobalt, Chem. Mater. 24 (2012) 1025-1030. https://doi.org/10.1021/cm2029189
  32. M. Kim, S. Nabeya, S. M. Han, M. S. Kim, S. Lee, H. M. Kim, S. Y. Cho, D. J. Lee, S. H. Kim, K. B. Kim, Selective atomic layer deposition of metals on graphene for transparent conducting electrode application, ACS Appl. Mater. Interface, 12 (2020) 12.
  33. H. B. R. Lee, S. H. Baeck, T. F. Jaramillo, S. F. Bent, Growth of Pt nanowires by atomic layer deposition on highly ordered pyrolytic draphite, Nano Lett, 13 (2013) 457-463. https://doi.org/10.1021/nl303803p
  34. J. Lee, J. M Lee, H. Oh, C. Kim, J. Kim, D. H. Kim, B. Shong, T. J. Park, W. H. Kim, Inherently area-selective atomic layer deposition of SiO2 thin films to confer oxide versus nitride selectivity, Adv. Func. Mater., 31 (2021) 2102556. https://doi.org/10.1002/adfm.202102556
  35. K. B. Ramos, M. J. Saly, R. K. kanjoila, Y. J. Chabal, Atomic layer deposition of cobalt silicide thin films studied by in situ infrared spectroscopy, Chem. Mater, 27 (2015) 4943-4949. https://doi.org/10.1021/acs.chemmater.5b00743
  36. M. M. Kerrigan, J. P. Klesko, C. H. Winter, Low temperature, selective atomic layer deposition of cobalt metal films using bis(1,4-di-tert-bytyl-1,3-diazadienyl) cobalt and alkylamine precursors, Chem. Mater., 29 (2017) 7458-7466. https://doi.org/10.1021/acs.chemmater.7b02456
  37. X. Jiang, H. Wang, J. Qi, B. G. Willis, In-situ spectroscopic ellipsometry study of copper selective-area atomic layer deposition on palladium, J. Vac. Sci. Technol. A, 32 (2014) 041513. https://doi.org/10.1116/1.4884535
  38. J. Qi, D. T. Zimmerman, G. J. Weisel, B. G. Willis, Nucleation and growth of copper selective area atomic layer deposition on palladium nanostructures, J. Chem. Phys., 147 (2017) 154702. https://doi.org/10.1063/1.4996188
  39. A. J. M. Mackus, J. J. L. Mulders, M. C. M. Van De Sanden, W. M. M. Kessels, Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition, J. Appl. Phys., 107 (2010) 116102. https://doi.org/10.1063/1.3431351
  40. A. J. M. Mackus, M. A. Verheijenm N. Leick, A. A. Bol, W. M. M Kessels, Influence of oxygen exposure on the nucleation of platinum atomic layer deposition: consequences for film growth, nanopatterning, and nanoparticle synthesis, Chem. Mater, 25 (2013) 1905-1911. https://doi.org/10.1021/cm400562u
  41. J. A. Singh, N. F. W. Thissen, W. H. Kim, H. Johnson, W. M. M. Kessels, A. A. Bol, S. F. Bent, A. J. M. Mackus, Area-selective atomic layer deposition of metal oxides on noble metals through catalytic oxygen activation, Chem. Mater, 30 (2018) 663-670. https://doi.org/10.1021/acs.chemmater.7b03818
  42. J. L. Lu, J. W. Elam, P. C. Stair, Synthesis and stabilization of supported metal catalysts by atomic layer deposition, Acc. Chem. Res., 46 (2013) 1806-1815. https://doi.org/10.1021/ar300229c
  43. M. J. Weber, A. J. M. Mackus, M. A. Verheijen, C. V. D. Marel, W. M. M. Kessels, Supported core/shell bimetallic nanoparticles synthesis by atomic layer deposition, Chem. Mater., 24 (2012) 2973-2977. https://doi.org/10.1021/cm301206e
  44. B. G. Willis, J. Qi, X. Jiang, J. Chen, G. J. Weisel, D. T. Zimmerman, Selective-area atomic layer deposition of copper nanostructures for direct electro-optical solar energy conversion, ECS Trans., 64 (2014) 253-263.
  45. A. J. M. Mackus, S. A. F. Dielissen, J. J. L. Mulders, W. M. M. Kessels, Nanopatterning by direct-write atomic layer deposition, Nanoscale, 4 (2012) 44777-4480.
  46. F. S. M. Hashemi, S. F. Bent, Sequential regeneration of self-assembled monolayers for highly selective atomic layer deposition, Adv. Mater. Interfaces, 3 (2016) 1600464. https://doi.org/10.1002/admi.201600464
  47. A. Mameli, M. J. M. Merkx, B. Karasulu, F. Roozeboom, W. M. M. Kessels, A. J. M. Mackus, Area-selective atomic layer deposition of SiO2 using acetylacetone as a chemoselective inhibitor in an ABC-type cycle, ACS Nano, 11 (2017) 9303-9311. https://doi.org/10.1021/acsnano.7b04701
  48. S. Seo, Reaction mechanism of area-selective atomic layer deposition for Al2O3 nanopatterns, ACS Appl. Mater. Interfaces, 9 (2017) 41607-41617. https://doi.org/10.1021/acsami.7b13365
  49. M. F. J. Vos, S. N. Chopra, M. A. Verheijen, J. G. Ekerdt, S. Agarwal, W.M.M Kessels, A. J. M. Mackus, Area-selective deposition of ruthenium by combining atomic layer deposition and selective etching, Chem. Mater, 31 (2019) 3878-3882. https://doi.org/10.1021/acs.chemmater.9b00193
  50. S. M. George, Y. Lee, Prospects for thermal atomic layer etching using sequentialsaf, self-limiting fluorination and ligand-exchange reactions, ACS Nano, 10 (2016) 4889-4894. https://doi.org/10.1021/acsnano.6b02991