• Bulletin of the Korean Chemical Society
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• v.24 no.2
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• pp.183-188
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• 2003

The micro-patterning of multi-layered thin films containing CdS and $Ta_2O_5$ layers on ITO substrate with various structures was successfully obtained by combining three different techniques: chemical solution depositions, sol-gel, and microcontact printing (μCP) methods using octadecyltrichlorosilane (OTS) as the organic thin layer template. $Ta_2O_5$ layer was prepared by sol-gel casting and CdS one obtained by chemical solution deposition, respectively. Parallel and cross patterns of multi-layers with $Ta_2O_5$ and CdS films were fabricated additively by successive removal of OTS layer pre-formed. This study presents the designed architectures consisting of the two types of feature having horizontal dimensions of 170 ㎛ and 340 ㎛ with constant thickness ca. 150 nm of each deposited materials. The thin film lay-out of the cross-patterning is composed of four regions with chemically different layer compositions, which are confirmed by Auger electron microanalysis.

• Corrosion Science and Technology
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• v.23 no.3
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• pp.179-194
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• 2024

A layer-by-layer coating was produced using electrophoretic deposition for a HA/Al₂O₃ coating layer and a bioglass coating layer on Co-Cr-Mo alloy with a roughness of 0.5 ㎛ (400 emery paper SiC). The corrosion behaviour was analyzed by assessing the coating layers' exceptional corrosion resistance, which outperformed the substrate. Cr ion release test using AAS was carried out, indicating that factional graded coating inhibited ion release from the uncoated substrate to coated sample. The porosity was expressed as a percentage, representing the extent of imperfections on the surface of all coatings. These imperfections fell within an acceptable range of 1% to 3%. The roughness of the coated surface was measured using atomic force microscopy, which revealed an excellent roughness value of 3.32 nm. Tape test technique for adhesion revealed that the removal area of the substrate coating layer varied by 11.92%. X-ray diffraction analysis confirmed the presence of all coating material peaks and verified phases of the deposited coating layers. These findings provided evidence that the coating composition remains unaffected by the electrophoretic deposition process. The bioactivity was assessed by immersion in a simulated bodily fluid, which revealed the formation of HCA during a period of 5 days.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1296-1301
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• 2003

The chemical mechanical polishing(CMP) is necessarily applied to manufacturing the dielectric layer and metal line in the semiconductor device. The conditioning of polishing pad in CMP process additionally operates for maintaining the removal rate, within wafer non-uniformity, and wafer to wafer non-uniformity. But the fixed abrasive pad(FAP) using the hydrophilic polymer with abrasive that has the swelling characteristic by water owns the self-conditioning advantage as compared with the general CMP. FAP also takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing due to the reduction of abrasive concentration. This paper introduces the manufacturing technique of FAP. And the tungsten CMP using FAP achieved the good conclusion in point of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• Journal of Korean Neurosurgical Society
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• v.49 no.4
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• pp.245-247
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• 2011

There were only a few reports of mercury on pulmonary artery. However, there is no data on surgery related mercury dissemination. The objective of the present article is to describe one case of postoperative injected mercury dissemination. A 19-year-old man presented severe neck pain including meningeal irritation sign and abdominal pain after injection of mercury for the purpose of suicide. Radiologic study showed injected mercury in the neck involving high cervical epidural space and subcutaneous layer of abdomen. Partial hemilaminectomy and open mercury evacuation of spinal canal was performed. For the removal of abdominal subcutaneous mercury, C-arm guided needle aspiration was done. After surgery, radiologic study showed disseminated mercury in the lung, heart, skull base and low spinal canal. Neck pain and abdominal pain were improved after surgery. During 1 month after surgery, there was no symptom of mercury intoxication except increased mercury concentration of urine, blood and hair. We assumed the bone work during surgery might have caused mercury dissemination. Therefore, we recommend minimal invasive surgical technique for removal of injected mercury. If open exposures are needed, cautious surgical technique to prohibit mercury dissemination is necessary and normal barrier should be protected to prevent the migration of mercury.

• Restorative Dentistry and Endodontics
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• v.25 no.4
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• pp.527-535
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• 2000

The purpose of this study was to evaluate effects of smear layer and dentin primers on the sealing ability of root canals. 126 extracted human teeth with single, straight canals and mature apices were used. The Samples were first classified into six groups as follows: presence of smear layer; absence of smear layer; Scotchbond Bond Multi-Purpose; All Bond 2; Mac Bond 2; Clearfil Liner Bond 2. A Positive control was also established. All teeth except the control group were then obturated with thermoplasticized gutta-percha and AH26. Electrochemical and dye penetration technique were later used to evaluate the degree of micro leakage through the root canal. Seventy teeth were then immersed in a 1% potassium chloride solution and An external power supply(DC 10 V) was then applied to the circuit for the electrochemical microleakage test. The degree of Microleakage was determined over period of 28 days before being evaluated. In total, 48 teeth were submitted to the dye infiltration technique. All specimen were suspended in 2% methylene blue dye for 1 week before being longitudinally split. The degree of dye infiltration was measured under a stereo microscope at ${\times}10$ magnification and evaluated. The results were as follows: 1. Apical microleakage increased throughout the test period in all group and one group having a smear layer showed a dramatic increase under electrochemical test (p<0.05). In the group having smear layer, the degree of apical microleakage was the highest, and the micro leakage was much higher than in the smear layer removed group in electrochemical test (p<0.05). Scotchbond Multi-Purpose, All Bond 2, Mac Bond 2 and Clearfil Liner Bond 2 showed lower micro leakage than one group having smear layer. The All Bond 2 and Clearfil Liner Bond 2 treated groups showed the lowest microleakage in electrochemical test (p<0.05). 2. There was no significant difference between the experimental groups in dye penetration technique. These results suggested that the removal of the smear layer from root canal and concomitantly the application of dentin primer into root canal could improve the sealing ability of root canal obturation.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.6-11
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• 2000

The hydrogen plasma treatment of silicon wafers in the reactive ion-etching mode was studied for the application to silicon-on-insulator wafers which were prepared using the wafer bonding technique. The chemical reactions of hydrogen plasma with surface were used for both surface activation and removal of surface contaminants. As a result of exposure of silicon wafers to the plasma, an active oxide layer was found on the surface. This layer was rendered hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposing time and power. In addition, the surface became smoother with the shorter plasma exposing time and power. The value of initial surface energy estimated by the crack propagation method was 506 mJ/㎡, which was up to about three times higher as compared to the case of conventional direct using the wet RCA cleaning method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.235-235
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• 2010

The Anti-reflection coating(ARC) properties can be formed on silicon substrate using a simple electrochemical etching technique. This etching step can be improve solar cell efficiency for a solar cell manufacturing process. This paper is based on the removal of silicon atoms from the surface a layer of porous silicon(PSi). Porous silicon is form by anodization and can be obtained in an electrolyte with hydrofluoric. It have demonstrated the feasibility of a very efficient porous Si layer, prepared by a simple, cost effective, electrochemical etching method. We expect our research can results approaching to lower than 10% of reflectance by optimization of process parametaer.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.7
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• pp.22-29
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• 2004

As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• Environmental Engineering Research
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• v.24 no.4
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• pp.646-653
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• 2019

Recovery of valuable metals in the industrial wastewater and sludge has attracted an attention owing to limited metallic resources in the earth. In this study, we firstly fabricated Ti/Ir-Ru electrodes by spin coating technique for effective recovery of Cu in electrowinning process. Two different Ti/Ir-Ru electrodes were fabricated using 100 and 500 mM of precursors (i.e., Ir-Ru). SEM-EDX and AFM revealed that Ir and Ru were homogenously distributed on the surface of Ti plate by the spin coating, in particular the electrode prepared by 500 mM showed distinct boundary line between Ir-Ru layer and Ti substrate. XRD, XPS, and cyclic voltammetry also revealed that characteristics of IrO₂, RuO₂, and TiO₂ and its electrocatalytic property increased as the concentration of coating precursor increased. Finally, we carried out Cu recovery experiments using two Ti/Ir-Ru as anodes in electrowinning process, showing that both anodes showed a complete removal of Cu (1 and 10 g/L) within 6 h reaction, but much higher kinetic rate constant was obtained by the anode prepared by 500 mM. The findings in this study can provide a fundamental knowledge for surface characteristics of Ti/Ir-Ru electrode prepared by spin coating method and its potential feasibility for effective electrowinning process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.77-79
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• 1992

We propose a self-aligned and double recessed technique for GaAs power MESFETs application. The gate length and the wide recess width are defined by a selective removal of the SiN layer using reactive ion etching(RIE) while the depth of the channel is defined by chemical etching of GaAs layers. The threshold voltages and the saturation drain voltage could be sucessfully controlled using this technique. The lateral-etched distance increases with the dry etching time and the source-drain breakdown voltage of MESFET increases up to about 30V at a pinch-off condition. The electrical characteristics of a MESFET with a gate length of 2 x10S0-6Tm and a source-gate spacing of 33 x10S0-6Tm show maximum transconductance of 120 mS/mm and saturation drain current density of 170-190mA/mm at a gate voltage of 0.8V.