• 제목/요약/키워드: Layer Height

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3D 프린팅 시간 단축을 위한 상하 레이어 폴리라인 병합 기반 가변 슬라이싱 (Adaptive Slicing by Merging Vertical Layer Polylines for Reducing 3D Printing Time)

  • 박지영;강주형;이혜인;신화선
    • 한국컴퓨터그래픽스학회논문지
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    • 제22권5호
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    • pp.17-26
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    • 2016
  • 본 논문에서는 상하 레이어 폴리라인 병합(merging) 기반 가변(adaptive) 슬라이싱 기법을 제안한다. 먼저 출력 가능한 최소 두께 값을 사용하여 입력된 3D 폴리곤 모델을 균일(uniform) 슬라이싱하고 각 레이어 단면 영역의 경계에 대한 폴리라인(polyline)들을 생성한다. 다음으로 상하 연결성이 높은 폴리라인들을 그룹화한 후, 각 그룹 내에서 불필요한 폴리라인들을 삭제한다. 삭제할 레이어를 결정하기 위해 기하오차척도인 커스프 높이(cusp height)를 계산하고 이를 기반으로 적정 레이어 두께를 결정한다. 마지막으로레이어 두께 범위 내의 폴리라인들을 삭제함으로써 한 개 레이어로 병합된다. 제안 방법은 형상의 특징을 최대한 유지함과 동시에 출력 시간을 효과적으로 단축시킨다는 장점을 가진다. 성능 검증을위해 제안 기법과 전역적 가변 슬라이싱 기법을 사용하여 총 10개 3D 폴리곤 모델을 슬라이싱 한 후 출력 시간을 결정짓는 수치인 폴리라인의 총 길이를 측정하였다. 실험 결과, 모든 모델에 대해 제안한 기법의 폴리라인 총 길이가 더 짧았으며 이는 더 빠른 시간에 출력을 완료할 수 있다는 것을 의미한다.

초박형 유리층 보호를 위한 펜 낙하 시험의 기계적 모델링 (Mechanical Modeling of Pen Drop Test for Protection of Ultra-Thin Glass Layer)

  • 오은성;오승진;이선우;전승민;김택수
    • 마이크로전자및패키징학회지
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    • 제29권3호
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    • pp.49-53
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    • 2022
  • 초박형 유리(Ultra-Thin Glass, UTG)는 디스플레이 보호용 커버 윈도우로 폴더블(foldable) 디스플레이에 사용되고 있으며, 향후에는 롤러블(rollable) 디스플레이나 다양한 플렉시블(flexible) 전자기기에 확대 적용될 것으로 예상되고 있다. 폴더블 디스플레이의 경우, 사용자들에 의해 굽힘과 터치 펜에 의해 충격을 받게 되고, 이 외에도 낙하 등 다른 외부충격에 쉽게 노출되어 있다. 초박형 유리는 100 ㎛ 이하로 두께가 얇고 취성하여 여러 외부 충격에 의해 쉽게 균열이나 파단이 발생할 수 있고, 이러한 균열이나 파단은 폴더블 디스플레이에 심각한 신뢰성 문제를 야기한다. 따라서, 본 연구에서는 초박형 유리의 내충격 신뢰성을 평가하는 펜 낙하 실험을 유한 요소 모델로 구성하고, 초박형 유리의 내충격 신뢰성을 향상시키기 위한 기계적 모델링을 진행하였다. 초박형 유리층 상부 혹은 하부에 보강층을 삽입했을 때, 펜 낙하에 의해 초박형 유리층에 작용하는 응력 메커니즘을 분석하였고, 그에 따라 신뢰성 향상을 위한 최적의 구조를 제시하였다. 또한 초박형 유리의 강도에 따른 최대 펜 낙하 높이를 예측할 수 있도록 펜 낙하 높이에 따라 초박형 유리층에 작용하는 최대 주 응력 값을 분석하였다.

Comparison of Electrical Properties between Sputter Deposited Au and Cu Schottky Contacts to n-type Ge

  • Kim, Hogyoung;Kim, Min Kyung;Kim, Yeon Jin
    • 한국재료학회지
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    • 제26권10호
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    • pp.556-560
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    • 2016
  • Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

비 제어 상태의 레이저 직접 금속성형공정에서 적층높이의 모델링 (Modeling of Deposition Height in the Uncontrolled Laser Aided Direct Metal Deposition Process)

  • 장윤상
    • 한국기계가공학회지
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    • 제7권4호
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    • pp.128-134
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    • 2008
  • Models of the deposition heights in the uncontrolled laser aided direct metal deposition process are constructed for the enhancement of the process integrity. Linear and non-linear statistical models as well as fuzzy model are utilized as the modeling methods. The predictability of the models are evaluated with the values of the sum of square error. The algorithm to use the models in the feedback controlled system is suggested to increase the deposition height accuracy within a layer.

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PtSi-nSi 쇼트키 다이오드에서 이온 주입이 장벽높이의 변화에 미치는 영향 (The Effect of Ion Implantation on the Barrier Height in PtSi-nSi Schottky Diode)

  • 이용재;이문기;김봉렬
    • 대한전자공학회논문지
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    • 제23권5호
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    • pp.712-718
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    • 1986
  • A shallow n+ layer of implanted phosphorus was used to lower the barrier height of PtSinSi schottky diodes. The reduction of barrier height of the forward turn-on voltages from 400mV to 180mV of the forward was followed by implantation of phosphorus at 35KeV with an ion dose of 8.0x10**12 atoms/cm\ulcornerand was activated at 925\ulcorner for 30min in dry O2. The test result showed that, as the ion-implanted dose increased, the forward turn-on voltage and reverse breakdown voltage were linearly decreased, but the saturation current and ideality factor(n) were linearly increased.

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Refinement Module 기반 Three-Scale 보행자 검출 기법 (A Three-scale Pedestrian Detection Method based on Refinement Module)

  • 정경민;박수용;이현
    • 대한임베디드공학회논문지
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    • 제18권5호
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    • pp.259-265
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    • 2023
  • Pedestrian detection is used to effectively detect pedestrians in various situations based on deep learning. Pedestrian detection has difficulty detecting pedestrians due to problems such as camera performance, pedestrian description, height, and occlusion. Even in the same pedestrian, performance in detecting them can differ according to the height of the pedestrian. The height of general pedestrians encompasses various scales, such as those of infants, adolescents, and adults, so when the model is applied to one group, the extraction of data becomes inaccurate. Therefore, this study proposed a pedestrian detection method that fine-tunes the pedestrian area by Refining Layer and Feature Concatenation to consider various heights of pedestrians. Through this, the score and location value for the pedestrian area were finely adjusted. Experiments on four types of test data demonstrate that the proposed model achieves 2-5% higher average precision (AP) compared to Faster R-CNN and DRPN.

소형실험태양(小型實驗太陽)연못에서 열저장층(熱貯藏層)의 두께에 관(關)한 실험적(實驗的) 연구(硏究) (Experimental Study on Thicknesss of Heat Storage Zone in Small Solar Pond)

  • 박이동;서지원
    • 태양에너지
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    • 제7권2호
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    • pp.22-29
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    • 1987
  • This paper dealed with thickness variation of bottom heat sotrage zone due to salinity and flow rate of extration hot brine in small test solar pond (0.5m wide, 0.5m high, 1.0m long). Testing apparatus and situation were follows: 7.1 cm of height of suction diffuser and 1.8cm of height of discharge diffuser above the test pond respectively, 0.3cm of slot size of suction diffuser, 1.0cm of slot size of discharge diffuser, 47cm of length of the slot; heating of hot water ($75^{\circ}C$) through separated hot water tank, discharge of the brine into storage zone through discharge diffuser, the extration of the brine through suction diffuser, circulation of the extracted brine through a heat exchanger (cooler). Following results were obtained through the experiments. 1. In small test solar pond, the typical three zone which showed up in real solar pond were established. 2. Richardson Number was used more effectively to confirm hydrodynamic stability of the stratified flow. 3. The thickness of non convective layer had a great effect on the heat storage of the bottom convective layer, then the temperature of bottom convective layer had a relation to that of upper convective layer. 4. Optimum operating condition in the test pond was on 10%-15% of salt concentration and $0.05m^3/hr$ of flow rate of extraction hot brine. 5. Following thickness of 3 zones were available to obtain under optimum operation condition: o bottom storage zone: $30%{\pm}10%$ of total pond depth o non-convective zone: $40%{\pm}10%$ of total pond depth o Upper surface zone: $20%{\pm}10%$ of total pond depth.

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변조 광전류 측정법을 이용하여 전극 변화에 따른 유기발광소자의 내장 전압 (Built-in voltage in organic light-emitting diodes from the measurement of modulated photocurrent)

  • 이은혜;윤희명;한원근;김태완;안준호;오현석;장경욱;정동회
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.51-52
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    • 2007
  • Built-in voltage in organic light-emitting diodes was studied using modulated photocurrent technique ambient conditions. From the bias voltage-dependent photocurrent, built-in voltage of the device is determined. The applied bias voltage when the magnitude of modulated photo current is zero corresponds to a built-in voltage. Built-in voltage in the device is generated due to a difference of work function of the anode and cathode. A device was made with a structure of anode/$Alq_3$/cathode to study a built-in voltage. ITO and ITO/PEDOT:PSS were used as an anode, and Al and LiF/AI were used as a cathode. It was found that an incorporation of PEDOT:PSS layer between the ITO and $Alq_3$ increases a built-in voltage by about 0.4V. This is consistent to a difference of a highest occupied energy states of ITO and PEDOT:PSS. This implies that a use of PEDOT:PSS layer in anode improves the efficiency of the device because of a lowering of anode barrier height. With a use bilayer cathode system LiF/Al, it was found that the built-in voltage increases as the LiF layer thickness increases in the thickness range of 0~1nm. For 1nm thick LiF layer, there is a lowering of electron barrier by about 0.2eV with respect to an Al-only device. It indicates that a very thin alkaline metal compound LiF lowers an electron barrier height.

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농도 성층화된 유체의 아랫면 가열에 의한 이중확산대류에 관한 연구 (Double-Diffusive Convection in a Salt-Stratified Fluid Heated From Below)

  • 강신형;김무현;이진호
    • 대한기계학회논문집
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    • 제18권12호
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    • pp.3297-3304
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    • 1994
  • Experimental investigation have been made to study the double-diffusive nature of convection of an initially stratified salt-water solution heated from below in a cylindrical cavity. The objective is to examine the process of mixed-layer formation, the flow phenomena, the heat transfer characteristics, and temperature and concentration distribution according to the changes in the effective Rayleigh number based on the reference height which represents the relation of temperature and concentration gradient. The types of initially formed flow pattern are categorized in three regimes depending on the effective Rayleigh number ; stagnant flow regime, single mixed-layer flow regime and successively formed multiple mixed-layer flow regime. The temperature and concentration profiles are both uniform in each layer due to convective mixing in the layered flow regime, but both linear in stagnant flow regime and single mixed-layer flow regime. At the interface between adjacent layers, the temperature changes smoothly but the concentration changes rapidly. The layers expand by diffusion of concentration through the interface along with its random fluctuation.

산화막을 이용한 SiC 기판의 macrostep 형성 억제 (Suppression of Macrosteps Formation on SiC Wafer Using an Oxide Layer)

  • 방욱;김남균;김상철;송근호;김은동
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.539-542
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    • 2001
  • In SiC semiconductor device processing, it needs high temperature anneal for activation of ion implanted dopants. The macrosteps, 7~8nm in height, are formed on the surface of SiC substrates during activation anneal. We have investigated the effect of thermally-grown SiO$_2$layer on the suppression of macrostep formation during high temperature anneal. The cap oxide layer was found to be efficient for suppression of macrostep formation even though the annealing temperature is as high as the melting point of SiO$_2$. The thin cap oxide layer (10nm) was evaporated during anneal then the macrosteps were formed on SiC substrate. On the other hand the thicker cap oxide layer (50nm) remains until the anneal process ends. In that case, the surface was smoother and the macrosteps were rarely formed. The thermally-grown oxide layer is found to be a good material for the suppression of macrostep formation because of its feasibility of growing and processing. Moreover, we can choose a proper oxide thickness considering the evaporate rate of SiO$_2$at the given temperature.

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