• Applied Chemistry for Engineering
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• v.18 no.4
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• pp.350-355
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• 2007

The effect of moisture in flue gas on SCR reaction of NMO (Natural Manganese Ore) was studied. The experiments were performed over NMO with NO, $NH_3$ at independent condition or simultaneous condition. $NH_3$ can be oxidized at low temperature by the lattice oxygen in NMO catalyst. The concentration of NO and $NO_2$ by $NH_3$ oxidation with moisture is higher above $300^{\circ}C$ than that without moisture. Moisture would competitively adsorb with NO and $NH_3$ on NMO catalyst. It caused poor NOx conversion to compete against $H_2O$. Besides the NOx conversion efficiency was reduced at below $250^{\circ}C$ because of the dipped $H_2O$ competitively adsorbed $NH_3$. The reactivity of NMO varied with the calcination temperature and the optimum calcination temperature was $400^{\circ}C$ regardless $H_2O$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3387-3390
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• 2013

Catalytic gasification of mandarin waste residue was carried out using direct and indirect catalyst-contact methods for the first time. In the indirect method, non-catalytic reaction in a reactor was followed by catalytic upgrading of vapor product in another reactor. Two different catalysts, $Ni/{\gamma}-Al_2O_3$ and $Ni/CeO_2-ZrO_2$, were employed. $CeO_2-ZrO_2$ support was prepared using hydrothermal synthesis in supercritical water. The catalysts were characterized by $H_2$-temperature programmed reduction and Brunauer-Emmett-Teller analyses. Under the condition of equivalent ratio (ER) = 0, the indirect catalyst-contact method led to a higher gas yield than the direct method. Under ER = 0.2, the yield of biogas obtained over $Ni/CeO_2-ZrO_2$ was higher than that obtained over $Ni/{\gamma}-Al_2O_3$. Also, the coke formation of $Ni/CeO_2-ZrO_2$ was lower than that of $Ni/{\gamma}-Al_2O_3$. Such results were attributed to the higher reducibility and better lattice oxygen mobility of $Ni/CeO_2-ZrO_2$, which were advantageous for partial oxidation reaction.

• Nuclear Engineering and Technology
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• v.52 no.11
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• pp.2585-2593
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• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.5
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• pp.513-518
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• 2005

Catalytic oxidation of toluene on the manganese oxide catalysts and manganese-cerium oxide catalysts was investigated. The catalysts were characterised by X-ray diffraction(XRD), thermo gravimetric analyzer(TGA), toluene-temperature program reduction(Toluene-TPR). We found that the optimal manganese content was 18.2 wt.% and the optimal cerium content was 10.0 wt.% at catalytic oxidation of toluene. It is shown that ceria improves the activity of manganese oxide phases. From the XRD results, it was estimated that $MnO_2$ phase was active site in the monometallic and bimetallic catalysts. From the TGA and Toluene-TPR results, it show that ceria improves the mobility of the lattice oxygen, adequate oxidation state of the active phase, reduction ability at low temperature, and re-oxidation of the active site.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.49-52
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• 2011

A dinuclear copper(II) complex of [$Cu_2(aceace)_4$(dipyph)] [aceace = acetylacetone, dipyph = 1,4-di(4-pyridylethene-2-yl-)benzene] has been synthesized and characterized by elemental analysis, IR and X-ray single crystal diffraction. It crystallizes in the monoclinic system, space group P21/c, with lattice parameters a = 7.9584(16) $\AA$, b = 18.594(4) $\AA$, c = 15.063(4) $\AA$ $\beta=120.97(2)^o$ and $M_r$ = 807.85 ($C_{40}H_{44}Cu_2N_2O_8$), Z = 2. Each of the $Cu^{2+}$ ion adopts a square pyramid geometry and coordinates with four oxygen atoms from two aceace ligands and one nitrogen atom from dipyph bidentate ligand. Magnetic measurement shows that the Weiss constant and Curie constant for the title compound are -0.22 K and 0.1154 emu K/mol, respectively. Thermal stability data indicate that the title complex undergoes two steps decomposition and the residue is $Cu_2O_4$. In the potential range of -1.5 ~ 0.8 V, the title complex represents an irreversible electrochemical process.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.21-24
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• 2005

This work is to present each properties and the interfacial characterization between PZT layer and LSMO layer of PZT/LSMO/Pt. LSMO thin film grown by KrF(248 nm) excimer lasers are used in pulsed in pulsed laser deposition(PLD). PZT coposites thin films were deposited by spin coating using a commercial resist spinner. LSMO thin film by deposition oxygen pressure 125 mtorr have rhombohedral structure on Pt(111) substrate. The PZT/LSM/Pt pre-orientate to [111] direction. The final thin films were shown that magnetic and electric property was typical value, respective. We report that the lattice between the PZT/LSMO thin film and the substrate plays a very important role and may control to another effects.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.368-372
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• 2011

Aluminum nitride (AlN) has excellent thermal conductivity, whereas it has some disadvantage such as low sinterability. In this study, the effects of sintering additive content and sintering condition on thermal conductivity of pressureless sintered AlN ceramics were examined on the variables of 1~3 wt% sintering additive ($Y_2O_3$) content at $1900^{\circ}C$ in $N_2$ atmosphere with holding time of 2~10 h. All AlN specimens showed higher thermal conductivity as the $Y_2O_3$ content and holding time increase. The formation of secondary phases (yttrium aluminates) by reaction of $Y_2O_3$ and $Al_2O_3$ from AlN surface promoted the thermal conductivity of AlN specimens, because the secondary phases could reduce the oxygen contents in AlN lattice. Also, thermal conductivity was increased by long sintering time because of the uniform distribution and the elimination of the secondary phases at the grain boundary by the evaporation effect during long holding time. A carbothermal reduction reaction was also affected on the thermal conductivity. The thermal conductivity of AlN specimens sintered at $1900^{\circ}C$ for 10 h showed 130~200W/mK according to the content of sintering additive.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1122-1127
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• 1998

Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.56-59
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• 2004

HgTe and HgTe/CdTe core-shell structured nanocrystals(NCs) were synthesized in aqueous solution by colloidal method. HgTe and HgTe/CdTe NCs structure showed very similar XRD patterns because of the same lattice constant and crystal structure of both samples. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe NCs revealed the strong exitonic peak in the IR region. The PL spectrum of HgTe/CdTe NCs have the intense peak in about 700nm shorter than that of HgTe by 400nm. The photocurrent measurement of colloidal NCs are performed using He-Ne laser for light source. The photocurrent of HgTe NCs shows the instant increased current response to light, but HgTe/CdTe NCs revealed a decreased current when lighted to the sample. In the vacuum condition, it shows reverse result that current increased under the illumination of light and it is thought that the molecules like the hydro-oxygen gas in the air give an important effect on the current mechanism.