• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.618-618
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• 2013

Graphene is only one atom thick planar sheet of sp2-bonded carbon atoms arranged in a honeycomb crystal lattice, which has flexible and transparent characteristics with extremely high mobility. These noteworthy properties of graphene have given various applicable opportunities as electrode and/or channel for various flexible devices via suitable physical and chemical modifications. In this work, for the development of all-graphene devices, we performed to synthesize alternately patterned structure of mono- and multi-layer graphene by using the patterned Ni film on Cu foil, having much different carbon solid solubilities. Depending on the process temperature, Ni film thickness, introducing occasion of methane and gas ratio of CH4/H2, the thickness and width of the multi-layer graphene were considerably changed, while the formation of monolayer graphene on just Cu foil was not seriously influenced. Based on the alternately patterned structure of mono- and multi-layer graphene as a channel and electrode, respectively, the flexible TFT (thin film transistor) on SiO2/Si substrate was fabricated by simple transfer and O2 plasma etching process, and the I-V characteristics were measured. As comparing the change of resistance for bending radius and the stability for a various number of repeated bending, we could confirm that multi-layer graphene electrode is better than Au/Ti electrode for flexible applications.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2014.11a
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• pp.226-227
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• 2014

We demonstrate nanoscale local anodic oxidation (LAO) patterning on few layer graphene using atomic force microscope (AFM) at room temperature and normal atmosphere. We focus on the humidity dependency in nanoscale oxidation of graphene. The relationship between the oxidation size and the AFM setting values, such as set point, tip speed, and humidity are observed. By changing these values, proper parameters were found to produce features on demand size. This technique provides an easy way to form graphene oxide lithography without any chemical resists. We have obtained oxidation size down to 50-nm with 6-nm-height oxide barrier line with $0.1{\mu}m/s$ tip scanning speed and micrometer size symbols on a graphene flake. We attribute the bumps to local anodic oxidation on graphene surface and combination of oxygen ions into the graphene lattice.

• Journal of the Korean Applied Science and Technology
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• v.30 no.3
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• pp.371-379
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• 2013

In order to improve the selective oxidation reaction of gaseous ammonia at a low temperature, various types of metal-impregnated activated alumina were prepared, and also physical and chemical properties of the conversion of ammonia were determined. Both types of metal (Cu, Ag) impregnated activated alumina show high conversion rate of ammonia at high temperature (over $300^{\circ}C$). However, at lower temperature ($200^{\circ}C$), Ag-impregnated catalyst shows the highest conversion rate (93%). In addition, the effects of lattice oxygen of the developed catalyst was studied. Ce-impregnated catalyst showed higher conversion rate than commercial alumina, but also showed lower conversion rate than Ag-impregnated sample. Moreover, 5 vol.% of Ag activation under hydrogen shows the highest conversion rate result. Finally, through high conversion at low temperature, it was considered that the production of NO and $NO_2$, toxic by-products, were effectively inhibited.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.217-220
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• 1995

By substituting Cd$\^$2+/ into both A-site and B-site in PNN-PZ-PT ternary perovskite material, it is possible to determine the effects of the substitution site of Cd$\^$2+/ on sintering behavior. Sintering was performed in the temperature range from 1000$^{\circ}C$ to 1300$^{\circ}C$. The substitution site of Cd$\^$2+/ is identified by XPS spectra. Although Cd$\^$2+/ is substituted into both A-site and B-site in PNN-PZ-PT, Cd$\^$2+/ prefers A-site to B-site. The density is influenced by substitution site of Cd$\^$2+/. If Cd$\^$2+/ replaces Pv$\^$2+/, weight gain is observed during sinterig process. On the contrary, if Cd$\^$2+/ replaces Ni$\^$2+/, weight loss is promoted during sintering. From these weight changes, it is believed that Cd$\^$2+/ changes the bonding strength between B-site cation and oxygen of octahedron in perovskite structure. The changes of lattice parameters as a function of Cd$\^$2+/ content were consistent with those of the bonding strength. The densities of A-site-doped compositions were higher than those of B-site-doped composition.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.341-347
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• 1999

An ambiguity on the correct room temperature structure of $Bi_5Ti_3FeO_{15}$ was resolved using a combined Rietveld refinement of neutron and X-ray diffraction. The structure of this compound has been reported to have a space group of F2mm (adopting 2-fold rotation symmetry along the c-axis) or A21am. However, our diffraction, study reveals that some reflections would violate F-centering and confirm that the belong to $A2_1$am. Out refinement with the space group of $A2_1$am converged at $R_p=6.85%, R_wp=9.23%$ and $\chi^2$=1.66 for an isotropic temperature model with 85 variables. The lattice constants are a=5.4677(1) $\AA$, b=5.4396(1) $\AA$, and c=41.2475(8)$\AA$. In structure, Ti/Fe atoms at the oxygen octahedral sites of the perovskite unit are completely disordered, resulting in that these atoms are transparent in neutron diffraction. The octahedra of the perovskite unit are relatively displaced along the a-axis against the Bi atoms, which contribute as a major component to the spontaneous polarization of $Bi_5Ti_3FeO_{15}$.

• Journal of Magnetics
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• v.14 no.4
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• pp.161-164
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• 2009

Iron-doped $Sn_{1-x}Fe_xO_2$ (x = 0.0, 0.05, 0.1, 0.2, 0.33) thin films on Si(100) substrates and powders were prepared by a chemical solution process. The x-ray diffraction (XRD) patterns of the $Sn_{1-x}Fe_xO_2$ thin films and powders showed a polycrystalline rutile tetragonal structure. Thermo gravimetric (TG) - differential thermal analysis (DTA) showed the final weight loss above $430{^{\circ}C}$ for all powder samples. According to XRD Rietveld refinement of the powders, the lattice parameters and unit cell volume decreased with increasing Fe content. The magnetic properties were characterized using a vibrating sample magnetometer (VSM) and M$\ddot{o}$ssbauer spectroscopy. The thin film samples with x = 0.1 and 0.2 showed paramagnetic properties but thin films with x = 0.33 exhibited ferromagnetic properties at room temperature. Mossbauer studies revealed the $Fe^{3+}$ valence state in the samples. The ferromagnetism in the samples can be interpreted in terms of the direct ferromagnetic coupling of ferric ions via an electron trapped in a bridging oxygen deficiency, which can be explained using the F-center exchange model.

• Applied Chemistry for Engineering
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• v.3 no.4
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• pp.717-721
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• 1992

Mechanical mixtures of vanadium molybdate and copper molybdate catalysts prepared by coprecipitation method, and those of $MoO_3$ and $V_2O_5$ were used to study the synergistic effects between each metal oxide for the selective oxidation of acrolein. The catalytic activity results revealed that the conversion of acrolein and yield of acrylic acid were increased with the mixture catalysts and it could be explained by a remote control mechanism. Thermal gravimetric analysis confirmed the evolution of lattice oxygen in the mixture catalysts.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.573-573
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• 2012

High quality $VO_2$ thin films were successfully grown on GaN substrate by optimizing oxygen partial pressure during the growth using RF sputtering technique. The $VO_2$ thin film grown on GaN substrate exhibited an unusual metal insulator transition behavior, which was known to be observed only either in doped sample or under uniaxial stress. Raman spectra also confirmed that metal insulator transition occurred from monoclinic M1 to rutile R phase via monoclinic M2 phase with increasing temperature. We believe that large lattice mismatch between $VO_2$ and GaN substrate may cause M2 phase to be thermodynamically stable. Optical transmittance and its electrical switching behavior were carefully investigated to elucidate the underlying physics of its metal insulator transition behavior. This study may lead to a unique opportunity to better understand the growth mechanism of M2 phase dominant $VO_2$ thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.435-435
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• 2011

The electronic structure and various physical properties of CeO2, Ce2O3, PrO2, and Pr2O3 have been studied from the framework of Ab-initio by the all-electron projector-augmented-wave (PAW) method, as implemented VASP (Vienna Ab-initio Simulation Package). The generalized gradient approximation (GGA) with effective U (Ueff) has been used to explain the strong on-site Coulomb repulsion among the localized Ce 4f electrons. The dependence of selected observables of these materials on the Ueff parameter has been scrutinized. The studied properties contain lattice constants, density of states, and reaction energies of CeO2, Ce2O3, PrO2, and Pr2O3. For CeO2 and PrO2, the GGA(PBE)+U results are in good agreement with experimental data whereas for the computational calculationally more demanding Ce2O3 and Pr2O3 both approaches give comparable accuracy. This results represent that by choosing an appropriate Ueff it is possible to reliably describe structural and electronic properties of CeO2, Ce2O3, PrO2, and Pr2O3, which enables modeling of oxygen reduction reaction processes involving ceria-based materials.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.260-264
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• 2014

We developed a novel double dopant bismuth oxide system with Tb and W. When Tb was doped as a single dopant, a Tb dopant concentration more than 20 mol% was required to stabilize bismuth oxides with a high conductivity cubic structure. High temperature XRD analysis of 25 mol% Tb-doped bismuth oxide (25TSB) confirmed that the cubic structure of 25TSB was retained from room temperature to $700^{\circ}C$ with increase in the lattice parameter. On the other hand, we achieved the stabilization of high temperature cubic phase with a total dopant concentration as low as ~12 mol% with 8 mol% Tb and 4 mol% W double dopants (8T4WSB). Moreover, the measured ionic conductivity of 10T5WSB was much higher than 25TSB, thus demonstrating the feasibility of the double dopant strategy to develop stabilized bismuth oxide systems with higher oxygen ion conductivity for the application of SOFC electrolytes at reduced temperature. In addition, we investigated the long-term stability of TSB and TWSB electrolytes.