• 한국재료학회:학술대회논문집
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• 한국재료학회 1995년도 추계 학술발표 강연 및 논문개요집
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• pp.25-26
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• 1995

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.239-242
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• 2002

Luminescence efficiency of phosphors, $SrTiO_3;Pr^{3+}$ and $SrIn_2O_4:Pr^{3+}$, is increased remarkably by III-group impurities. This effect is explained by a picture that carriers thermally released from impurity-induced traps supply energy to $Pr^{3+}$ ions. The impurities also improve carrier transport efficiency by reducing lattice defects. This picture indicates a possibility to develop new ternary oxide phosphors.

• Bulletin of the Korean Chemical Society
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• 제16권12호
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• pp.1184-1189
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• 1995

The rapid quenching dynamics of F center excitation by OH- defects in KCl crystals are investigated by monitoring ground state absorption bleach recovery, using a picosecond streak camera absorption spectrometer. F center absorption bleach in OH--doped crystals shows three distinguishable recovery components with the current temporal resolution, designated as slow, medium and fast components. The slow one is due to the normal relaxation process of F* centers as found in OH--free crystals. The others are consequent on energy transfer from electronically excited F centers to OH--vibrational levels. The fast component is a minor energy transfer process and resulting from the relaxation of somewhat distant, not the closest, associated pairs of F* and OH- defects. The energy transfer between widely separated F* and OH- defects opens up a recovery process via the medium component which is assisted by OH- librations, lattice vibrations and OH- dipole reorientations. The quenching behaviors of F* luminescence and photoionization by OH- are explained well by the relaxation process of the medium component.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.101-102
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• 2009

SGOI MOSFETs with various Ge mole fractions were fabricated and compared to the SOI MOSFET. SGOI MOSFETs have a lager drain current and higher effective mobility than the SOI MOSFET as increased Ge mole fractions. The lattice constant difference causes lattice mismatch between the SiGe layer and the top-Si layer during the top-Si layer growth. However, SGOI MOSFETs have a lager leakage current at subthreshold region. Also, leakage current at subthreshold region increased with Ge mole fractions. This is attributable to the crystalline defects due to the lattice mismatch between the SiGe layer and the top-Si layer.

• 대한전자공학회논문지
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• 제25권3호
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• pp.294-301
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• 1988

A study on the lattice damages and impurity depth profiles have been performed with BF2 ion implanted silicon materials. Electrical measurement, SIMS and TEM analysis techniques were used in order to identify the reverse annealing phenomena, impurity depth profiles and lattice damages. A typical reverse annealing phenomena were shown at the dose of 1x10**15/cm\ulcorner and non-reverse annealing at the dose of 5x10**15/cm\ulcorner This was explained with the formation of the amorphous region at BF2+ ion implantation with high dose. That is, the amorphous reigons were recrystallized centrated at certain regions were measured by SIMS technique. The dislocation loops-like crystalline defects were observed with TEM cross sections, which were formed at the lattice damaged region during annealing process.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1095-1096
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• 2006

When $Y_2O_3$ was added to Ti-excess $BaTiO_3$ ((Ba+Y)/Ti =1), the area occupied by $Y^{3+}$ ion was confirmed by its microstructure development, electrical conductivity behavior and lattice constant. Grain growth inhibition was observed when the content of donor dopant exceeded a critical value ($x{\approx}.0.01$) in $BaTiO_3+x(0.5Y_2O_3+TiO_2)$ system. A donor-doped behavior was observed at various Y contents ($0.2\sim3.0$ mol% Y) when $Y_2O_3$ was added to $TiO_2$-excess $BaTiO_3$. As Y content was increased, (002) and (200) peaks shifted to higher angles and the lattice constant (a and c axis) decreased gradually.

• Nuclear Engineering and Technology
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• 제25권1호
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• pp.71-79
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• 1993

소둔시편 및 소둔 후 냉간가공한 하프늄시편에 대하여 양전자수명을 조사하였다. 소둔시편에서의 양전자수명은 187$\pm$3.7 psec인 반면, 소둔 후 냉간가공한 시편에서 격자결함에 포획된 양전자의 수명은 217$\pm$4.2 psec로 측정되었다. 양전자소멸측정 및 미세경도측정 방법을 이용하여 등시소둔에 의한 냉간가공시편의 회복 및 재결정 거동을 조사하였다. 재결정단계에서는 양전자소멸측정 과 미세경도측정값이 유사한 경향을 나타냈으나, 회복단계에서는 양전자소멸측정값이 매우 현저하게 변화하는 반면, 미세경도값은 거의 변화하지 않았다. 하프늄의 회복단계는 623 K부터 시작되며 재결정온도는 1023 K정도로 측정되었다.

• Composites Research
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• 제30권6호
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• pp.331-337
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• 2017

복합재 격자 구조물은 무게가 가볍고 비강성, 비강도가 높다는 장점이 있으며 주로 압축 하중이 작용하는 발사체구조에 적용된다. 그러나 필라멘트 와인딩 기법으로 제작되므로 섬유가 겹쳐지는 부분에서 기공과 결함이 발생하게 된다. 설계 하중 도출을 위한 해석 모델 검증을 위해 구조물의 강성, 강도 확인이 필요하지만 Full scale 시험의 경우 시간, 공간상의 제약이 따르며 구조물의 형상이 복잡하므로 시험에 어려움이 많다. 따라서 강성 확인을 위한 Subelement 단위의 시험법이 필요하다. 본 논문에서는 복합재 격자 구조물을 단위격자구조로 가공하였으며 각각 압축, 굽힘 시험을 수행하여 나선 리브, 원주 리브의 강성을 확인하였다. 휘임, 비틀림 형상을 가진 원통형 복합재 격자 구조물의 강성 평가를 위한 압축, 굽힘 시험법을 제안하였으며 유한요소해석을 수행하여 시험결과와 비교하였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.187-207
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• 1999

The thermal distributions near the growth interface of 150mm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10m from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it si confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient (G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective lengths of the thermal gradient for defect generation are varied, were defined the effective length as 10mm from the interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitial. The experimental results which FZ and CZ crystals are detached from the melt show that growth interfaces are filled with vacancy. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitial are necessary. Such interstitial recombine with vacancies which were generated at the growth interface, next occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by the distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melt, respectively.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.