• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.368-372
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• 2011

Aluminum nitride (AlN) has excellent thermal conductivity, whereas it has some disadvantage such as low sinterability. In this study, the effects of sintering additive content and sintering condition on thermal conductivity of pressureless sintered AlN ceramics were examined on the variables of 1~3 wt% sintering additive ($Y_2O_3$) content at $1900^{\circ}C$ in $N_2$ atmosphere with holding time of 2~10 h. All AlN specimens showed higher thermal conductivity as the $Y_2O_3$ content and holding time increase. The formation of secondary phases (yttrium aluminates) by reaction of $Y_2O_3$ and $Al_2O_3$ from AlN surface promoted the thermal conductivity of AlN specimens, because the secondary phases could reduce the oxygen contents in AlN lattice. Also, thermal conductivity was increased by long sintering time because of the uniform distribution and the elimination of the secondary phases at the grain boundary by the evaporation effect during long holding time. A carbothermal reduction reaction was also affected on the thermal conductivity. The thermal conductivity of AlN specimens sintered at $1900^{\circ}C$ for 10 h showed 130~200W/mK according to the content of sintering additive.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.8
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• pp.79-86
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• 2022

With the recent increase in the demand for electric vehicles, it is necessary to identify the high current safety of automobile parts. Among the automobile parts, the EPDM parts required colored parts from the existing black; therefore, it was necessary to change the basic filler from carbon black to silica. The rubber used in automobile parts is flexible and exhibits basic characteristics of high strength and elongation. However, as the filler is changed to silica, its physical properties, such as tensile strength and elongation, are lower than those of the existing carbon black base. Therefore, it is necessary to evaluate the mechanical properties with the addition of the EPDM compound using silica as a base without degrading the physical properties of EPDM. In this study, an experiment based on the additive content was performed using the mixture experimental planning method to analyze the mechanical properties according to the additive type and mixing ratio of silica-based EPDM. The mixing ratio of the four additives was set using a simplex lattice design, and the tensile strength, elongation, modulus 300%, and permanent compression reduction rate were analyzed for mechanical characteristics, and rheometer experiments were performed for vulcanization characteristics. Through statistical analysis of the measured data, the main effects and interactions of the EPDM-blended rubber additives were analyzed. These results can be used to derive a mixing ratio of additives that satisfies the required characteristics of the EPDM compound.

• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.246-256
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• 2021

Mo,Cu-doped CeO₂ (CMCuO) nanopowders were synthesized by the nitrate-fuel combustion method aiming to improve the electrical and electrochemical properties of its Mo-doped CeO₂ (CMO) parent by the addition of copper. An electrical conductivity of ca. 1.22·10^-2 S cm^-1 was measured in air at 800℃ for CMCuO, which is nearly 10 times higher than that reported for CMO. This increase was associated with the inclusion of copper into the crystal lattice of ceria and the presence of Cu and Cu₂O as secondary phases in the CMCuO structure, which also could explain the increase in the charge transfer activities of the CMCuO based anode for the hydrogen and carbon monoxide electro-oxidation processes compared to the CMO based anode. A maximum power density of ca. 120 mW cm^-2 was measured using a CMCuO based anode in a solid oxide fuel cell (SOFC) with YSZ electrolyte and LSM-YSZ cathode operating at 800℃ with humidified syngas as fuel, which is comparable to the power output reported for other SOFCs with anodes containing copper. An increase in the area specific resistance of the SOFC was observed after ca. 10 hours of operation under cycling open circuit voltage and polarization conditions, which was attributed to the anode delamination caused by the reduction of the Cu₂O secondary phase contained in its microstructure. Therefore, the addition of a more electroactive phase for hydrogen oxidation is suggested to confer long-term stability to the CMCuO based anode.

• Advances in concrete construction
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• v.12 no.6
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• pp.479-490
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• 2021

Present research is mainly focused on, microstructural and durability analysis of Graphene Oxide (GO) in Wollastonite (WO) induced cement mortar with silica fume. The study was conducted by evaluating the mechanical properties (compressive and flexural strength), durability properties (water absorption, sorptivity and sulphate resistance) and microstructural analysis by SEM. Cement mortar mix prepared by replacing 10% ordinary portland cement with SF was considered as the control mix. Wollastonite replacement level varied from 0 to 20% by weight of cement. The optimum replacement of wollastonite was found to be 15% and this was followed by four sets of mortar specimens with varying substitution levels of cementitious material with GO at dosage rates of 0.1%, 0.2%, 0.3% and 0.4% by weight. The results indicated that the addition of up to 15%WO and 0.3% GO improves the hydration process and increase the compressive strength and flexural strength of the mortar due to the pore volume reduction, thereby strengthening the mortar mix. The resistance to water penetration and sulphate attack of mortar mixes were generally improved with the dosage of GO in presence of 15% Wollastonite and 10% silica fume content in the mortar mix. Furthermore, FE-SEM test results showed that the WO influences the lattice framework of the cement hydration products increasing the bonding between silica fume particles and cement. The optimum mix containing 0.3% GO with 15% WO replacement exhibited extensive C-S-H formation along with a uniform densified structure indicating that calcium meta-silicate has filled the pores.

• Korean Journal of Materials Research
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• v.34 no.6
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• pp.283-290
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• 2024

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO₂ has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO₂ on RuO₂ with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO₂ was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10^-6 A/cm² at 1 V, and an EOT at the 0.5 nm level was achieved.

• International Journal of Internet, Broadcasting and Communication
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• v.16 no.1
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• pp.17-28
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• 2024

As listed as one of the most important requirements for Post-Quantum Cryptography standardization process by National Institute of Standards and Technology, the resistance to various side-channel attacks is considered very critical in deploying cryptosystems in practice. In fact, cryptosystems can easily be broken by side-channel attacks, even though they are considered to be secure in the mathematical point of view. The timing attack(TA) and the simple power analysis attack(SPA) are such side-channel attack methods which can reveal sensitive information by analyzing the timing behavior or the power consumption pattern of cryptographic operations. Thus, appropriate measures against such attacks must carefully be considered in the early stage of cryptosystem's implementation process. The Montgomery multiplier is a commonly used and classical gadget in implementing big-number-based cryptosystems including RSA and ECC. And, as recently proposed as an alternative of building blocks for implementing post quantum cryptography such as lattice-based cryptography, the big-number multiplier including the Montgomery multiplier still plays a role in modern cryptography. However, in spite of its effectiveness and wide-adoption, the multiplier is known to be vulnerable to TA and SPA. And this paper proposes a new countermeasure for the Montgomery multiplier against TA and SPA. Briefly speaking, the new measure first represents a multiplication operand without 0 digits, so the resulting multiplication operation behaves in a very regular manner. Also, the new algorithm removes the extra final reduction (which is intrinsic to the modular multiplication) to make the resulting multiplier more timing-independent. Consequently, the resulting multiplier operates in constant time so that it totally removes any TA and SPA vulnerabilities. Since the proposed method can process multi bits at a time, implementers can also trade-off the performance with the resource usage to get desirable implementation characteristics.

• Archives of Metallurgy and Materials
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• v.66 no.3
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• pp.803-808
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• 2021

The influence of nano dispersion on the thermoelectric properties of Bi₂Te₃ was actively investigating to wide-spread thermoelectric applications. Herein this report, we have systematically controlled the microstructure of Bi_0.5Sb_1.5Te₃ (BST) alloys through the incorporation of carbon nanofiber (CNF), and studied their effect on thermoelectric properties, and mechanical properties. The BST/x-CNF (x-0, 0.05, 0.1, 0.2 wt.%) composites powder was fabricated using high energy ball milling, and subsequently consolidated the powder using spark plasma sintering. The identification of CNF in bulk composites was analyzed in Raman spectroscopy and corresponding CNF peaks were recognized. The BST matrix grain size was greatly reduced with CNF dispersion and consistently decreased along CNF percentage. The electrical conductivity was reduced and Seebeck coefficient varied in small-scale by embedding CNF. The thermal conductivity was progressively diminished, obtained lattice thermal conductivity was lowest compared to bare sample due to induced phonon scattering at interfaces of secondary phases as well as highly dense fine grain boundaries. The peak ZT of 0.95 achieved for 0.1 wt.% dispersed BST/CNF composites. The Vickers hardness value of 101.8 Hv was obtained for the BST/CNF composites.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.2
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• pp.192-201
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• 2003

In this paper, to reduce the size of patch, three types of 3-dimensional patch antennas which are one-directionally-corrugaged type, rectangular ring-likely corrugated type, and lattice-likely corrugated type rectangular microstrip patch antennas(MPA) are designed and fabricated at the 1.575 GHz. As the result, one-directionally corrugated rectangular MPA is reduced in the resonant length of patch by 21.4% than that of general plane MPA. -10 dB bandwidth(B.W) is 62 MHz(3.9 %) and this is broader than that(39 MHz, 2.5 %) of plane MPA by 23 MHz(1.5 %). The gain is 5.8 dBd and this is reduced by 0.9 dB than that(6.7 dBd) of plane MPA. Half power beamwidth(HPBW) is broadened by 18$^{\circ}$ than that of plane MPA in the E-plane and this is due to the reduced length of patch. For rectangular ring-likely corrugated retangular MPA, the patch size is miniaturized by 21.6 % than that of plane MPA. For lattice-likely corrugated rectangular MPA, in the linear polarization, the size of patch is miniaturized by 43.3 % than that of plane MPA. -10 dB B.W is 70 MHz(4.4 %) and this is broadened than that of plane MPA by 31 MHz(2 %). Gain is 2.2 dBd and this is smaller than that of plane MPA by 4.5 dB. HPBW is increased in both E-plane and H-plane by 22$^{\circ}$ and 13$^{\circ}$, respectively. For circular polarization, the size of patch is reduced by 41 % than that by 41 %. The axial ratio(AR) is 0.8 dB at the 1.575 GHz and the axial ratio bandwidth(ARBW) within 2 dB is 20 MHz(1.27 %) and this is increased by 10 MHz(0.63 %) than that 10 MHz(0.63 %) of plane MPA. From all the results above, it is conformed that the proposed antenna has merit in size reduction of patch and in the input impedance B.W, and is more profitable in many application than the general plane type MPA.

• Electronic Materials Letters
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• v.14 no.6
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• pp.689-699
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• 2018

Nanostructured Ni doped $Bi_2S_3$ ($Bi_{2-x}Ni_xS_3$, $0{\leq}x{\leq}0.07$) is explored as a candidate for telluride free thermoelectric material, through a combination process of mechanical alloying with subsequent consolidation by cold pressing followed with a sintering process. The cold pressing method was found to impact the thermoelectric properties in two ways: (1) introduction of the dopant atom in the interstitial sites of the crystal lattice which results in an increase in carrier concentration, and (2) introduction of a porous structure which reduces the thermal conductivity. The electrical resistivity of $Bi_2S_3$ was decreased by adding Ni atoms, which shows a minimum value of $2.35{\times}10^{-3}{\Omega}m$ at $300^{\circ}C$ for $Bi_{1.99}Ni_{0.01}S_3$ sample. The presence of porous structures gives a significant effect on reduction of thermal conductivity, by a reduction of ~ 59.6% compared to a high density $Bi_2S_3$. The thermal conductivity of $Bi_{2-x}Ni_xS_3$ ranges from 0.31 to 0.52 W/m K in the temperature range of $27^{\circ}C$ (RT) to $300^{\circ}C$ with the lowest ${\kappa}$ values of $Bi_2S_3$ compared to the previous works. A maximum ZT value of 0.13 at $300^{\circ}C$ was achieved for $Bi_{1.99}Ni_{0.01}S_3$ sample, which is about 2.6 times higher than (0.05) of $Bi_2S_3$ sample. This work show an optimization pathway to improve thermoelectric performance of $Bi_2S_3$ through Ni doping and introduction of porosity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.3
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• pp.109-114
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• 2008

Novel green long persistent phosphors of $CaZrO_3$ : $HO_{3+}$ have been synthesized at high temperature with weak reduction atmosphere by traditional solid state reaction method. The role of $H_3BO_3$ as flux and the suitable concentration of Ho as activator on the $CaZrO_3$ : $HO_{3+}$ long persistent phosphors has been investigated. Crystals of $HO_{3+}$ doped $CaZrO_3$ long persistent phosphores were characterized by fluorescence spectrophotometer and photoluminescence (PL). The main emission spectra of 546 nm peak was revealed through synthesizing at high temperature in $N_2$ gas atmosphere. The after glow emission spectra of $CaZrO_3$ : $HO_{3+}$ long persistent phosphores arise at 546 nm peak of narrow range. because that revealed pure green color. Green long persistent phosphors have been observed in the system for over 5 h after UV irradiation (254 nm). The main emission peak was ascribed to $HO_{3+}$ ions transition from $^5F_4$, $^5S_2{\to}^5I_3$, and the after glow may be ascribed to the trap centers in the $CaZrO_3$ host lattice.