• Journal of Satellite, Information and Communications
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• v.9 no.2
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• pp.12-17
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• 2014

In this paper, modified EDNMOS device with DPS (double polarity source) structure are suggested to realize stable and robust ESD (electrostatic discharge) protection performance of high voltage operating microchip. This DPS structure inserts the P+ diffusion layer on N+ source side, which in intended to block lateral extension of the electron rich region from N+ source side. Based on our simulation results, the inserted P+ diffusion layer effectively prevents the formation of deep electron channeling induced by high electron injection. As a result, our proposed DPS_EDNMOS devices could overcome the double snapback effect of conventional Std_EDNMOS device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• Journal of Korea Water Resources Association
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• v.55 no.11
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• pp.923-929
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• 2022

The Chuncheon Mullori area is an underprivileged area of water welfare where local water supply is not supplied, and it is supplying water to the villages with small water supply facilities using lateral flow and groundwater as water sources. This is an area with poor water supply conditions, such as relying on water trucks due to water shortages during the recent severe drought. Therefore, in order to solve the problem of water shortage during drought and to prepare for the increasing water demand, a sand dam was installed along the valley, and this facility has been operating since May 2022. In this study, repeated simulations were performed according to the hydraulic conductivity of the filler material and the storage coefficient value for the inflow condition for about two years from mid-March 2020 to mid-March 2022. For each case, the amount of discharge through the perforated drain pipe was calculated. Overall, as the hydraulic conductivity increased, the amount of discharge and its ratio increased. However, when the hydraulic conductivity of the second floor was relatively low, the amount of discharge increased and then decreased as the hydraulic conductivity of the third floor increased. This is considered to be due to the fact that the water level was kept low due to the rapid drainage compared to the net inflow into the third floor because the water permeability of the third floor and the drainage coefficient of the drain pipe were large. As a result of simulating the flow of the open channel in the upper part of the sand dam as a hypothetical groundwater layer with very high hydraulic conductivity, the decrease in discharge rate was slower than the increase in the hydraulic conductivity of the hypothetical layer, but it was clearly shown that the discharge volume decreased relatively as the hydraulic conductivity of the virtual layer increased.