• Journal of the Optical Society of Korea
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• v.13 no.1
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• pp.65-74
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• 2009

Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at $200^{\circ}C$ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to $2{\times}10^{-4}\;{\Omega}\;cm$ while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+$Alq_3$)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+$Alq_3$)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.5
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• pp.237-241
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• 2004

Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility ($\mu$$_{FE}$ ) , less than 1 c $m^2$/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in $\mu$$_{FE}$ and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 75$0^{\circ}C$ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.429-429
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• 2010

TFT 제조 방법 중 LTPS (Low Temperature Polycrystalline Silicon)는 저온과 저비용 등의 이점으로 인하여 flat panel display 제작에 널리 사용된다. 이동도와 전류 점멸비 등에서 이점을 가지는 ELA(Excimer Laser Annealing)가 널리 사용되고 있지만, 이 방법은 uniformity 등의 문제점을 가지고 있다. 이를 극복하기 위한 방법으로 MICC(Metal Induced Capping Crystallization)이 사용되고 있다. 이 방법은 $SiN_x$, $SiO_2$, SiON등의 capping layer를 diffusion barrier로 위치시키고, Ni 등의 금속을 capping layer에 도핑 한 뒤, 다시 한번 열처리를 통하여 a-Si에 Ni을 확산시키킨다. a-Si 층에 도달한 Ni들이 seed로 작용하여 Grain size가 매우 큰 film을 제작할 수 있다. 채널의 grain size가 클 경우 grain boundary에 의한 캐리어 scattering을 줄일 수 있기 때문에 MIC 방법을 사용하였음에도 ELA에 버금가는 소자의 성능과 안정성을 얻을 수있었다. 본 연구에서는 large grain TFT의 Gate bias stress에 따른 소자의 안정성 측정 및 분석에 목표를 두었다.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.30-37
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• 1996

Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.124-127
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• 2005

Rewritable optical memory devices such as an CD-RW and DVD+RW are data storage media, which take advantage of the different optical properties in the amorphous and crystalline states of phase change materials. The switching property, structural transformation, transformation kinetics and chemical bindings of $Ge_xSb_{100-x}$($6{\le}x{\le}$34) were studied to investigate the feasibility of applying $Ge_xSb_{100-x}$ alloys in optical memory. The $Ge_xSb_{100-x}$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, inductively coupled plasma atomic emission spectrometer (ICP-AES) and atomic force microscopy (AEM). Optimum fiim composition of $Ge_xSb_{100-x}$ was studied and its minimum time fur laser induced crystallization and optical contrast fur phase transition was performed. These results might be correlated with the binding energies between Ge and Sb, and indicate that $Ge_xSb_{100-x}$ have an potential far optical memory applications.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.67-69
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• 2003

The magnetic properties of single- and poly-crystalline $La_{0.7}Sr_{0.3}MnO_3/Pr_{0.65}Ca_{0.35}MnO_3$ multilayered (ML) films, and composite (CP) $(La_{0.7}Sr_{0.3})_{0.5}(Pr_{0.65}Ca_{0.35}_{0.5}MnO_3$ films, prepared by laser ablation, have been investigated in a wide temperature range. It was shown that the transformation from an incoherent to a coherent interface in the ML films leads to an enhancement of the ferromagnetic coupling between layers and to a single-phase magnetic transition. The amorphous CP films demonstrate a paramagnetic behavior of the magnetization with a sharp peak at $T_{G}\approx$45 K, which was interpreted as the formation of Griffiths phase. A short-term annealing at $750^{\circ}C$ induced the complete crystallization of film, and a recovery of the ferromagnetic and the metal-insulator transitions.