• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.43-46
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• 2000

Nd:YAG laser of 355 nm wavelength, which amounts to 3.5 eV, produced by a harmonic generator was used to create Ag metallic particles as seeds for nucleation in photosensitive glass containing $Ag^+$ and $Ce^{3+}$ . The pulse widths and frequency of the laser were 8ns and 10 Hz, respectively. For crystalline growth, heat-treatment following laser irradiation was carried out at $570^{\circ}C$ for 1h. Then, the $LiAlSi_3O^8$ crystal phase appeared in the laser irradiated lithium aluminum silicate glass. We present the effect of laser-induced nucleation compared with spontaneous nucleation by heat treatment fur crystallization in the glass.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.112-117
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• 2000

Nd:YAG laser of 355nm wavelength, which amounts to 3.5eV, produced by a harmonic generator was used to create Ag metallic particles as seeds for nucleation in photosensitive glass containing Ag+ and Ce3+. The pulse widths and frequency of the laser were 8ns and 10Hz, respectively. For crystalline growth, heat-treatment following laser irradiation was carried out at $570^{\circ}C$ fur 1h. Then, the LiAlSi3O8. crystal phase appeared in the laser irradiated lithium aluminum silicate glass. We present the effect of laser-induced nucleation compared with spontaneous nucleation by heat treatment for crystallization in the glass.

• Laser Solutions
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• v.13 no.1
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• pp.6-10
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• 2010

Crystallization of 100 nm thick amorphous silicon (a-Si) films on glass substrates was carried out by using a double laser irradiation method. Depending on a-Si deposition method or glass types, the quality of crystallized silicon film varies significantly. For a-Si films deposited with high concentration of impurities, large grains or high crystallinity can not be achieved. Crystallization with different a-Si deposition methods confirmed that for the polycrystallization of a-Si films on glass substrates, controlling the impurity density during substrate preparation is critical.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.7-7
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• 2007

Laser-irradiation-induced crystallization of as-deposited amorphous precursor films constitutes an integral step in fabricating LTPS TFTs. Consideration of various factors leads one to conclude that, for display manufacturers, choosing how to crystallize the films can be identified as being tactically and strategically significant. This paper will begin by reviewing the fundamental aspects of laser crystallization, and then present noteworthy advances and progress, which have recently been accomplished in the field. In particular, we will focus on communicating the evolving status associated with the sequential lateral solidification (SLS) method, which can be presently identified as the most strategically enabling crystallization method.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.104-109
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• 2001

A 355 nm (3.5 eV) neodymium:yttrium aluminum gamet laser, produced by a harmonic generator, was used to create silver metallic particles as seeds for nucleation in photosensitive glass containing Ag+ and Ce3+ ions. The pulse width and frequency of the laser were 8 ns and 10 Hz, respectively. Heat treatment was conducted at 570 C for 1 h, following laser irradiation, to produce crystalline growth, after which a LiAlSi3O8 crystal phase appeared in the laser-irradiated Li2O A1203 SiO2 glass. For the Present study, we compared the effect of laser-induced crystallization on glass crystallization with that of spontaneous crystallization by heat treatment.

• Journal of Convergence for Information Technology
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• v.9 no.5
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• pp.117-124
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• 2019

This paper discusses recent trends in the fabrication of semiconducting materials among the components of thin film transistors used in AMOLED display. In order to obtain a good semiconductor film, it is necessary to change the amorphous silicon into polycrystalline silicon. There are two ways to use laser and heat. Laser-based methods include sequential lateral solidification (SLS), excimer laser annealing (ELA), and thin-beam directional crystallization (TDX). Solid phase crystallization (SPC), super grain silicon (SGS), metal induced crystallization (MIC) and field aided lateral crystallization (FALC) were crystallized using heat. We will also study research for manufacturing large AMOLED displays.

• Journal of the Korean institute of surface engineering
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• v.47 no.1
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• pp.20-24
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• 2014

Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an indium tin oxide (ITO) conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced within the range of a millisecond. To investigate the kinetics of Joule-heating induced crystallization (JIC) solid phase crystallization was conducted using amorphous silicon films deposited by plasma enhanced chemical vapor deposition and using tube furnace in nitrogen ambient. Microscopic and macroscopic uniformity of crystallinity of JIC poly-Si was measured to have better uniformity compared to that of poly-Si produced by other methods such as metal induced crystallization and Excimer laser crystallization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.26-35
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• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.58.2-58
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• 2003