• 제목/요약/키워드: Laser induced CVD

검색결과 7건 처리시간 0.021초

레이저 CVD 텅스텐막 증착을 통한 TFT LCD 불량배선 수리 (Repairing of a Defective Metallic Line using Laser CVD Deposited Tungsten Film in TFT LCD)

  • 김석군;손정석;이기선
    • 한국전기전자재료학회논문지
    • /
    • 제17권10호
    • /
    • pp.1114-1119
    • /
    • 2004
  • The photodepositioned tungsten film by laser CVD has been carried out the taping test with scotch tape over 10 times. As a result, it exhibited strong adhesion to the under-film such as ITO and SiNx patterned on the LCD substrate. However, it was seriously attacked by alkaline solution used for removing polyimide. And a thickness of laser CVD tungsten film had a close relation to a speed of laser scanning. Also we have improved the success rate of a laser CVD repair with making two pairs of contact hole structure and decreasing laser scanning speed.

고에너지 이온주입 공정에 의한 유기 결함과 그 감소 대책 (A Study on Reducing High Energy Ion Implant Induced Defect)

  • 김영호;김인수;김창덕;김종관;성영권
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1997년도 하계학술대회 논문집 C
    • /
    • pp.1292-1297
    • /
    • 1997
  • 본 연구에서는 latch-up 개선책의 일환으로 개발중인 매립층을 갖는 retrograde well의 형성기술과 더불어 공정 단순화를 목적으로 개발된 BILLI (Buried Implanted Layer for Lateral Isolation) well 구조[1]에 대한 공정 유기 결함을 분석하고 그에 의한 소자 열화 특성을 분석 하였으며 그 개선책을 제시 하고자 하였다. 매립층 형성에 의한 유기결함은 접합 누설전류와 Gate oxide 신뢰성을 열화 시켰으나 이온주입 후 $1000^{\circ}C$ 이상의 온도에서 10sec 정도의 RTP anneal에 의해 그 소자 특성이 개선되며 표면 결함이 감소함을 알 수 있었다.

  • PDF

$CO_2$ Laser-induced CVD법에 의한 Silicon박막 및 p-n 접합 Silicon제작 (Silicon thin film and p-n junction diode made by $CO_2$ laser-induced CVD method)

  • 최원국;정광호;김웅
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1989년도 하계종합학술대회 논문집
    • /
    • pp.662-666
    • /
    • 1989
  • Pure mono Silane(Purity: 99.99%) was used as a thin film source and [$SiH_4$ + $H_2$ (5%)] + [$PH_3$ + $H_2$(0.05%)] mixed dilute gas was used for p-n junction diode. The substrate was P-type silicon wafer (p=$3{\Omega}$ cm) with the direction (100). The crystalline qualities of deposited thin film were investigated by the X-ray diffraction, RHEED and TED patterns and the voltampere characteristics of p-n junction diode was identified by I-V curve.

  • PDF

New mechanism of thin film growth by charged clusters

  • Hwang, Nong-Moon;Kim, Doh-Yeon
    • 한국결정성장학회지
    • /
    • 제9권3호
    • /
    • pp.289-294
    • /
    • 1999
  • The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to from in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also phase synthesis of the nanoparticels. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles in the gas phase. Charge clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVD process. The epitaxial sticking of the charged clusters on the growing surface is getting difficult as the cluster size increases, resulting in the nanostructure such as cauliflower or granular structures.

  • PDF

Single-phase Gallium Nitride on Sapphire with buffering AlN layer by Laser-induced CVD

  • Hwang Jin-Soo;Lee Sun-Sook;Chong Paul-Joe
    • Bulletin of the Korean Chemical Society
    • /
    • 제15권1호
    • /
    • pp.28-33
    • /
    • 1994
  • The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

New Mechanism of Thin Film Growth by Charged Clusters

  • Hwang, Nong-Moon;Kim, Doh-Yeon
    • 한국결정성장학회:학술대회논문집
    • /
    • 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
    • /
    • pp.115-127
    • /
    • 1999
  • The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to form in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also used in the gas phase synthesis of the nanoparticles. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles inthe gas phase. Charged clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVDd process. The epitaxial sticking of the charged clusters on the growing surface is gettign difficult as the cluster size increases, resulting in the nanostructure such as cauliflowr or granular structures.

  • PDF

Opto-Electrochemical Sensing Device Based on Long-Period Grating Coated with Boron-Doped Diamond Thin Film

  • Bogdanowicz, Robert;Sobaszek, Michał;Ficek, Mateusz;Gnyba, Marcin;Ryl, Jacek;Siuzdak, Katarzyna;Bock, Wojtek J.;Smietana, Mateusz
    • Journal of the Optical Society of Korea
    • /
    • 제19권6호
    • /
    • pp.705-710
    • /
    • 2015
  • The fabrication process of thin boron-doped nanocrystalline diamond (B-NCD) microelectrodes on fused silica single mode optical fiber cladding has been investigated. The B-NCD films were deposited on the fibers using Microwave Plasma Assisted Chemical Vapor Deposition (MW PA CVD) at glass substrate temperature of 475 ℃. We have obtained homogenous, continuous and polycrystalline surface morphology with high sp3 content in B-NCD films and mean grain size in the range of 100-250 nm. The films deposited on the glass reference samples exhibit high refractive index (n=2.05 at λ=550 nm) and low extinction coefficient. Furthermore, cyclic voltammograms (CV) were recorded to determine the electrochemical window and reaction reversibility at the B-NCD fiber-based electrode. CV measurements in aqueous media consisting of 5 mM K3[Fe(CN)6] in 0.5 M Na2SO4 demonstrated a width of the electrochemical window up to 1.03 V and relatively fast kinetics expressed by a redox peak splitting below 500 mV. Moreover, thanks to high-n B-NCD overlay, the coated fibers can be also used for enhancing the sensitivity of long-period gratings (LPGs) induced in the fiber. The LPG is capable of measuring variations in refractive index of the surrounding liquid by tracing the shift in resonance appearing in the transmitted spectrum. Possible combined CV and LPG-based measurements are discussed in this work.