• 제목/요약/키워드: Laser etching

검색결과 256건 처리시간 0.024초

Shear bond strength of resin cement to an acid etched and a laser irradiated ceramic surface

  • Kursoglu, Pinar;Karagoz Motro, Pelin Fatma;Yurdaguven, Haktan
    • The Journal of Advanced Prosthodontics
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    • 제5권2호
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    • pp.98-103
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    • 2013
  • PURPOSE. To evaluate the effects of hydrofluoric acid etching and Er,Cr:YSGG laser irradiation on the shear bond strength of resin cement to lithium disilicate ceramic. MATERIALS AND METHODS. Fifty-five ceramic blocks ($5mm{\times}5mm{\times}2mm$) were fabricated and embedded in acrylic resin. Their surfaces were finished with 1000-grit silicon carbide paper. The blocks were assigned to five groups: 1) 9.5% hydrofluoric-acid etching for 60 s; 2-4), 1.5-, 2.5-, and 6-W Er,Cr:YSGG laser applications for 60 seconds, respectively; and 5) no treatment (control). One specimen from each group was examined using scanning electron microscopy. Ceramic primer (Rely X ceramic primer) and adhesive (Adper Single Bond) were applied to the ceramic surfaces, followed by resin cement to bond the composite cylinders, and light curing. Bonded specimens were stored in distilled water at $37^{\circ}C$ for 24 hours. Shear bond strengths were determined by a universal testing machine at 1 mm/min crosshead speed. Data were analyzed using Kruskal-Wallis and Mann-Whitney U-tests (${\alpha}$=0.05). RESULTS. Adhesion was significantly stronger in Group 2 ($3.88{\pm}1.94$ MPa) and Group 3 ($3.65{\pm}1.87$ MPa) than in Control group ($1.95{\pm}1.06$ MPa), in which bonding values were lowest (P<.01). No significant difference was observed between Group 4 ($3.59{\pm}1.19$ MPa) and Control group. Shear bond strength was highest in Group 1 ($8.42{\pm}1.86$ MPa; P<.01). CONCLUSION. Er,Cr:YSGG laser irradiation at 1.5 and 2.5 W increased shear bond strengths between ceramic and resin cement compared with untreated ceramic surfaces. Irradiation at 6 W may not be an efficient ceramic surface treatment technique.

회절광학소자 제작을 위한 레이저 직접 노광기의 공정실험 (Parametric Study for a Diffraction Optics Fabrication by Using a Direct Laser Lithographic System)

  • 김영광;이혁교;김영식;이윤우
    • 한국정밀공학회지
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    • 제33권10호
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    • pp.845-850
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    • 2016
  • A direct laser lithography system is widely used to fabricate various types of DOEs (Diffractive Optical Elements) including lenses made as CGH (Computer Generated Hologram). However, a parametric study that uniformly and precisely fabricates the diffractive patterns on a large area (up to $200mm{\times}200mm$) has not yet been reported. In this paper, four parameters (Focal Position Error, Intensity Variation of the Lithographic Beam, Patterning Speed, and Etching Time) were considered for stabilization of the direct laser lithography system, and the experimental results were presented.

엣시머 레이져를 이용한 폴리우레탄의 미세 가공에 관한 연구 (A Study on the Micro Machining in Polyurethane by Excimer Laser)

  • 김재구;이성국;윤경구
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1997년도 춘계학술대회 논문집
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    • pp.366-370
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    • 1997
  • This paper descibes a micro groove machining process on the polyurethane biopolymer by KrF excimer laser. To investigate the etch charcteristics of polyurethane biopolymer quantitatively,laser system for ablation was installed with high precison moter and then polymer ablation experiment, in which paramteters were fluence,pulse repetition rate,numbers of pulses and assist gas, was carred out. In this experiment, we found out that the value of critical energy density for ablation is 30mJ/cmsup2/ and the etching rate is more dependent on the pulse number and fluence than any other pamameter. Finally, we machined micro grooves for fiexibility as width 300.mu.m depth 100.mu.m and port for micro-devices mounting as length 100.mu.m width 300.mu.m depth .mu.m on the outer wallof polyurethane biopolymer tube which is used as medical device.

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UV-LASER INDUCED SURFACE REACTION - DESORppTION AND ETCHING

  • Murata, Yoshitada
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1992년도 제2회 학술발표회 논문개요집
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    • pp.3-10
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    • 1992
  • pphotostimulated desorpption of NO chemisorbed on ppt(001) at 80K has been studied by the (1+1)-resonance-enhanced multipphoton ionization((1+1)-REMppI) technique. A linearly ppolarized ArF excimer laser ( =193 nm, 6.41eV) is used as the ppumpp laser. A high adsorpption rate selectivity was found in the expposure deppendence of the NO desorpption yield. The NO desorpption yield increases drastically when the amount of NO expposure exceeds ~1.8 L. This result shows that the amount of NO sppecies with a large cross section for pphotostimulated desorpption increases drastically at higher NO coverages. Using scanning tunneling microscoppy, we have observed structural modifications of the chlorinated Si(111)-7$\times$7 surface induced by 266nm laser irradiation. At very low laser fluence of 0.7mJ/$\textrm{cm}^2$, at which thermal desorpption can be ignored, a pperiodic stripped ppattern of a single domain is imaged. This ppattern consists of flat terraces and narrow grooves of ~60 and ~10A in width, resppectively.

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피코초 레이저를 이용한 초소수성 표면 제작에 관한 연구 (A Study on Surface Fabrication of Super Hydrophobic using Pico Second Laser)

  • 조일환;이제훈;노지환;이승원
    • 한국정밀공학회지
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    • 제29권2호
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    • pp.161-169
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    • 2012
  • Recently, a study for the functional surface production of super hydrophobic of natural and biomimetic artificial has attracted much attention. To make process methods of super hydrophobic surface has a variety of ways such as lithography, etching, and laser ablation. However, we were used ultra-shot pulse laser ablation process which has the virtue of more environmental friendliness and simple process. In this paper, we were fabricated a multiplicity of super hydrophobic patterns on mold surface(NAK80) using by optimizing the laser processing conditions and it was transferred on PDMS. Also, we measured contact angle super hydrophobic patterns on PDMS. The result showed there is no patterns on PDMS were measured 94 degrees, by contrast, optimized super hydrophobic patterns on PDMS was 157 degrees. Therefore we fabricated super hydrophobic surface on mold. Based on these experimental results, it is possible to mass production using ultra shot pulse laser ablation of super hydrophobic pattern and to be applied for a variety of industries.

Tribological performance of the laser surface treated CrZrSiN thin films

  • Kim, DongJun;La, JoungHyun;Lee, SangYul
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2012년도 춘계학술발표회 논문집
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    • pp.141-142
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    • 2012
  • Recently, surface texturing by atmospheric laser processing has been received lots of attention to improve the tribological performance of various surfaces and this laser texturing of surfaces could be considered in a large extent to improve tribological performance of PVD coated surface. Surface texturing could be performed by various manufacturing techniques such as indentation with hard materials, ion etching, abrasive jet machining, lithography, and Laser Surface Texturing (LST). Out of all these techniques, however it is generally accepted that laser surface texturing (LST) by atmospheric laser processing offers the most promising process as LST is very fast, environmentally-friendly, easy to control the shape and size of the microdimples. In this work various preliminary experimental results from the laser texturing on the PVD-coated steel substrate will be presented. Our results indicated that laser texturing definitely affect the tribological performance of the surfaces and the size as well as pattern type of laser texturing are one of the key factors. From the wear tests against an alumina counterpart ball at room temperature under oil-lubricated condition, laser surface texturing on the CrZrSiN films reduced the friction coefficients by approximately more than 5 times in the case of narrow patterned surfaces.

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테이퍼 모드 변환기를 집적한 1.55-$\mu m$ 레이저다이오드의 설계 (Design of 1.55-mm InGaAsP Laser Diode Integrated with a Tapered Ridge Mode Transformer)

  • 이기민
    • 한국광학회:학술대회논문집
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    • 한국광학회 1999년도 제16회 광학 및 양자전자 학술발표회Proceedings of 16th Optics and Quantum Electronics Conference, 1999
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    • pp.216-217
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    • 1999
  • A tapered ridge mode laser diode with increased spot size is designed and analyzed . The mode evolution concept is applied to design the taper and the method does not require regrowth or multiple-step etching technique. Three-dimensional BPM results show that the designed taper can transfer more than 97% of the mode power in the active region to the expanded mode.

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펨토초 레이저를 이용한 플렉시블 ITO 패터닝 연구 (Femtosecond laser pattering of ITO film on flexible substrate)

  • 손익부;김영섭;노영철
    • 한국레이저가공학회지
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    • 제13권1호
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    • pp.11-15
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    • 2010
  • Indium tin oxide (ITO) provides high electrical conductivity and transparency in the visible and near IR (infrared) wavelengths. Thus, it is widely used as a transparent electrode for the fabrication of liquid crystal displays (LCDs) and organic light emitting diode displays (OLRDs), photovoltaic devices, and other optical applications. Lasers have been used for removing coating on polymer substrate for flexible display and electronic industry. In selective removal of ITO layer, laser wavelength, pulse energy, scan speed, and the repetition rate of pulses determine conditions, which are efficient for removal of ITO coating without affecting properties of the polymer substrate. ITO coating removal with a laser is more environmentally friendly than other conventional etching methods. In this paper, pattering of ITO film from polymer substrates is described. The Yb:KGW femtosecond laser processing system with a pulse duration of 250fs, a wavelength of 1030nm and a repetition rate of 100kHz was used for removing ITO coating in air. We can remove the ITO coating using a scanner system with various pulse energies and scan speeds. We observed that the amount of debris is minimal through an optical and a confocal microscope, and femtosecond laser pulses with 1030nm wavelength are effective to remove ITO coating without the polymer substrate ablation.

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피코초 레이저 및 CDE를 이용한 TSV가공기술 (TSV Formation using Pico-second Laser and CDE)

  • 신동식;서정;조용권;이내응
    • 한국레이저가공학회지
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    • 제14권4호
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    • pp.14-20
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    • 2011
  • The advantage of using lasers for through silicon via (TSV) drilling is that they allow higher flexibility during manufacturing because vacuums, lithography, and masks are not required; furthermore, the lasers can be applied to metal and dielectric layers other than silicon. However, conventional nanosecond lasers have disadvantages including that they can cause heat affection around the target area. In contrast, the use of a picosecond laser enables the precise generation of TSVs with a smaller heat affected zone. In this study, a comparison of the thermal and crystallographic defect around laser-drilled holes when using a picosecond laser beam with varing a fluence and repetition rate was conducted. Notably, the higher fluence and repetition rate picosecond laser process increased the experimentally recast layer, surface debris, and dislocation around the hole better than the high fluence and repetition rate. These findings suggest that even the picosecond laser has a heat accumulation effect under high fluence and short pulse interval conditions. To eliminate these defects under the high speed process, the CDE (chemical downstream etching) process was employed and it can prove the possibility to applicate to the TSV industry.

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Current-voltage characteristics of n-AZO/p-Si-rod heterojunction

  • 이성광;최진성;정난주;김윤기
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.338.2-338.2
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    • 2016
  • Al doped ZnO (AZO) thin films were deposited on Si substrates with rod-shaped-surface by pulsed laser deposition method (PLD). Si-rods were prepared through chemical etching. To analyze the influence on the formation of the rod structure, samples with various chemical etching conditions such as AgNO3/HF ratio, etching time, and solution temperature were prepared. The morphology of Si-rod structures were examined by FE-SEM. Fig. 1 shows a typical structure of n-AZO/p-Si-rod juncions. The fabricated n-AZO/p-Si-rod devices exhibited p-n diode current-voltage characteristics. We compared the I-V characteristics of n-AZO/p-Si-rod devices with the samples without Si-rod structure.

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