• Title/Summary/Keyword: Laser crystal

Search Result 478, Processing Time 0.024 seconds

ATOMIC SCALE CRYSTAL GROWTH PROCESSES

  • Jackson, Kenneth A.;Beatty, Kirk M.
    • Proceedings of the Korea Association of Crystal Growth Conference
    • /
    • 1999.06a
    • /
    • pp.69-80
    • /
    • 1999
  • Computer simulations have played a central role in the development of out understanding of the atomic scale processes involved in crystal growth. The assumptions underlying computer modeling will be discussed and out recent work on modeling of the kinetic formation of thermodynamically unstable phases in alloys or mixtures will be reviewed. Our Monte Carlo computer simulations have reproduced the experimental results on the rapid recrystallization of laser-melted doped silicon. An analytical model for this phenomenon has been developed, and its applicability to other materials will be discussed.

  • PDF

Mid-infrared Continuous-wave Optical Parametric Oscillator with a Fan-out Grating MgO:PPLN Operating Up to 5.3 ㎛

  • Bae, In-Ho;Yoo, Jae-Keun;Lim, Sun Do;Kim, Seung Kwan;Lee, Dong-Hoon
    • Current Optics and Photonics
    • /
    • v.3 no.6
    • /
    • pp.577-582
    • /
    • 2019
  • We report on a continuous-wave (cw) optical parametric oscillator (OPO) optimized for mid-infrared emission above 5.0 ㎛. The OPO is based on a magnesium-oxide-doped periodically poled LiNbO3(MgO:PPLN) crystal with a fan-out grating design. A linear two-mirror cavity resonating both at the pump and signal wavelengths is stabilized to the pump laser by using the modified Pound-Drever-Hall (PDH) method. The idler wavelength is continuously tunable from 4.7 ㎛ up to 5.3 ㎛ by varying the poling period of the fan-out grating crystal. Pumped by a diode-pumped solid state (DPSS) laser with a power of 1.1 W at 1064 nm, the maximum idler output power is measured to be 5.3 mW at 4.8 ㎛. The output power above 5.0 ㎛ is reduced to the hundreds of ㎼ level due to increased absorption in the crystal, but is stable and strong enough to be measured with a conventional detector.

Gas phase temperature profile measurement of an upflow OMVPE reactor by laser Raman spectroscopy (레이저 라만 분광법을 이용한 도립형 OMVPE 반응기의 기상 온도 분포 측정)

  • ;Timothy J. Anderson
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.8 no.3
    • /
    • pp.448-453
    • /
    • 1998
  • An inverted, stagnation point flow OMVPE reactor was studied by laser Raman spectroscopy. Pure rotational Raman scattering by the carrier gas $(N_2; or; H_2)$ was used to determine the axial centerline temperature profile in the reactor as a function of the inlet flow velocity and the rector aspect ratio. A larger temperature gradient normal to the susceptor surface was obtained with higher gas glow velocity, larger aspect ratio, and the use of a $N_2$ carrier gas.

  • PDF

Optically Detected Magnetic Resonance with Nitrogen-Vacancy Spin Ensemble in Diamond

  • Lee, Hyun Joon;Shim, Jeong Hyun
    • Journal of the Korean Magnetic Resonance Society
    • /
    • v.22 no.2
    • /
    • pp.40-45
    • /
    • 2018
  • We report Optically-Detected Magnetic Resonance (ODMR) study on Nitrogen-Vacancy (NV) centers in diamond. The experiment can easily be conducted with basic optics and microwave components. A diamond crystal having a high-density NV center is suitable for the ODMR study. The magnetic field dependence of ODMR spectrum allowed us to determine the orientation of the diamond crystal. In addition, we measured the variation of the ODMR spectrum as a function of the excitation laser power. Thermal heating induced by optical absorption caused the monotonic decrease of zero field splitting. The contrast of the ODMR peak, however, increased and, then, began to decrease, indicating the optimal laser power for recording the ODMR spectrum.

Optical Characterization of Cubic and Pseudo-cubic Phase Perovskite Single Crystals Depending on Laser Irradiation Time

  • Byun, Hye Ryung;Jeong, Mun Seok
    • Applied Science and Convergence Technology
    • /
    • v.27 no.2
    • /
    • pp.42-45
    • /
    • 2018
  • Photovoltaic and optoelectronic devices based on hybrid metal halide perovskites ($MAPbX_3$; $MA=CH_3NH_3{^+}$, $X=Cl^-$, $Br^-$, or $I^-$) are rapidly improving in power conversion efficiency. Also, during recent years, perovskite single crystals have emerged as promising materials for high-efficiency photovoltaic and optoelectronic devices because of their low defect density. Here we show that the light soaking effect of mixed halide perovskite ($MAPbBr_{3-x}I_x$) single crystals can be explained using photoluminescence, time-resolved photoluminescence, and Raman scattering measurements. Unlike Br-based single crystal, Br/I mixed single crystal show a strong light soaking effect under laser irradiation condition that was related to the existence of multiple phases.

Growth of $NdAl_3(BO_3)_4$ Single Crystal for Miniature Solid State Laser (소형 고체 레이저용 $NdAl_3(BO_3)_4$ 단결정 육성)

  • 정선태;강진기;김정환;정수진
    • Journal of the Korean Ceramic Society
    • /
    • v.30 no.8
    • /
    • pp.643-650
    • /
    • 1993
  • NdAl3(BO3)4 have been developed for miniature solid state laser material. Single crystals of NdAl3(BO3)4 were grown by TSSG technique using BaB4O7 flux. The effects of growth conditions such as cooling rate, seed orientation and rotation speed on crystal quality and the morphology were studied. At the cooling rate of 2.4$^{\circ}C$/day and the crystal rotation speed of 30~40rpm with the seed orientation in <201> or <100> directions, transparent and light violet colored crystals in size of 10$\times$15$\times$20㎣ with well developed {010}, {111}, {111}, {021}, {001}, {102}, {112}, {021} faces were obtained. By X-ray diffraction analysis, the space group was determined as C2/c, and the X-ray powder data was obtained.

  • PDF

Wide bandgap III-nitride semiconductors: opportunities for future optoelectronics

  • Park, Yoon-Soo
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.12 no.1
    • /
    • pp.11-20
    • /
    • 2002
  • The world at the end of the $20^{th}$ Century has become "blue" Indeed, this past decade has witnessed a "blue rush" towards the development of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on wide bandgap III-Nitride semiconductors. And the hard work has culminated with, first, the demonstration of commercial high brightness blue and green LEDs and of commercial violet LDs, at the very end of this decade. Thanks to their extraordinary properties, these semiconductor materials have generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of-the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensors). Such opportunities and many others will be reviewed in this presentation.

Robust Optical Detection Method for the Vibrational Mode of a Tuning Fork Crystal Oscillator

  • Choi, Hyo-Seung;Song, Sang-Hun
    • Journal of Sensor Science and Technology
    • /
    • v.24 no.2
    • /
    • pp.93-95
    • /
    • 2015
  • We present an optical detection method for the fundamental vibrational mode of a tuning fork crystal oscillator in air. A focused He/Ne laser beam is directed onto the edge of one vibrating tine of the tuning fork; its vibrating motion chops the incoming laser beam and modulates the intensity. The beam with modulated intensity is then detected and converted to an electrical signal by a high-speed photo-detector. This electrical signal is a sinusoid at the resonant frequency of the tuning fork vibration, which is 32.76 kHz. Our scheme is robust enough that the sinusoidal signal is detectable at up to $40^{\circ}$ of rotation of the tuning fork.

Fabrication of 2-D photonic crystal with holographic lithography (홀로그램피 리소그래피 방법을 이용한 2차원 포토닉 크리스탈 제작)

  • Ju, Long-Yun;Nam, Ki-Hyun;Kim, Hyun-Koo;Choi, Hyuk;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.11a
    • /
    • pp.162-163
    • /
    • 2007
  • In this paper, we fabrication of 2-D photonic crytal using holographic lithography. We used Ag doped chalcogenide AsGeSeS film and He-Ne (632.8nm) (P:P) Polarized laser beam. The thickness of Ag thin film was varied from 60nm and the thickness of chalcogenide thin film was varied from 2um. Frist, holographic lithography with 1-D photonic crystal on Ag/AsGeSeS film. And than revolved the sample $90^{\circ}$ to fabricate 2-D photonic crystal with holographic lithography.

  • PDF

Temperature Dependence of Mn2+ Paramagnetic Ion in a Stoichiometric LiNbO3 Single Crystal

  • Yeom, Tae Ho;Lee, Soo Hyung
    • Journal of Magnetics
    • /
    • v.18 no.3
    • /
    • pp.221-224
    • /
    • 2013
  • Electron paramagnetic resonance (EPR) spectra of $Mn^{2+}$ impurity ion in Stoichiometric $LiNbO_3$ single crystal (SLN) was investigated with an X-band EPR spectrometer in the temperature range of 3 K~296 K. The intensity of EPR spectrum of $Mn^{2+}$ ion was increased to 20 K and decreased again below 20 K as the temperature decreases. The zero-field splitting parameter D decreased as the temperature increases. It was suggested that $Mn^{2+}$ ion substitute for $Nb^{5+}$ ion instead of $Li^+$ ion. No changes for hyperfine interaction of $Mn^{2+}$ ion was obtained in the temperature range of 3 K~296 K.