• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1407-1411
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM analysis. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• Laser Solutions
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• v.2 no.1
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• pp.22-29
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• 1999

This work was carried out as a fundamental experiment to fabricate a Graded-Boundary Ni/Steel material using a laser beam. A Ni sheet was placed on a steel substrate, and then a series of high power $CO_2$ laser beams were irradiated on the surface in order to produce a homogeneous alloyed layer. The processing parameters were : 4 ㎾ laser power, 2m/min traverse speeds, -2mm defocuing, 17 l/min sheiding gas flow rates. The sequential repetition of the laser surface alloying treatment up to 4 times, resulted in about 5mm thick of fair compositional gradient systems. In order to determine the microstructure, phase and compositional profiles in this material, optical microscopy, XRD and EDS were used. The compositions varied from 66% to 0% for Ni and 34% to 100% for Fe in this material The microstructures were typical morphologies of rapid solidification and solid-state cooling. Since compressive stress was formed in the heat affected region due to martensitic transformation, while relative tensile stress was developed in the alloyed region, cracks were formed between the alloyed region and the substrate region.

• Laser Solutions
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• v.6 no.2
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• pp.9-17
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received an increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM photography. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1134-1135
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• 2015

In this paper, we reported fabrication of sealing the glass substrate using laser treatment at low temperature for electrochemical luminescence (ECL) cell. The laser treatment at temperature is using laser diode. The glass substrate sealing by laser treatment tested at 1-5 W, 1-5 mm/s for builted and tested. The sealing laser treatment method will allow associate coordination between the two glass substrate was enclosed. The effect of laser treatment to sealing the glass substrate was found to have cracks and air gap at best thickness of about $845-780{\mu}m$ for condition 5 W, 1-5 mm/s. The surface of sealing was roughness which was not influent to electrodes So, it is more effective viscosity between two glasses substrate.

• Journal of Power System Engineering
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• v.9 no.4
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• pp.118-123
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• 2005

We have investigated the fabrication of Si nanoparticles and $C_{60}$ thin films by pulsed laser ablation. By atomic force microscopy(AFM), the laser-deposited $C_{60}$ thin film was verified to have surface far smoother than the surfaces of films produced by the conventional evaporation method. The Si deposited at a He atmosphere of 0.2 Torr was with about $60{\AA}$ height of the Si nanoparticles, suggesting that it was uniformly deposited. We observed visible green emissions spectra in the $Si/C_{60}$ multilayer films after laser annealing. It is considered that this green emissions is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ by laser annealing.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.1
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• pp.116-122
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• 2012

The purpose of this study is on the development of 3-D conductive pattern fabrication system using laser. For development 3-D direct patterning system, we used the dynamic focusing, the laser power stabilizer and the auto aligning techniques. These technologies are already used commercially. However operation and control integrated system for 3-D direct patterning are not yet developed. The objective of this paper is to introduce laser direct structuring and develop the operating and integration system. Also we implemented new application of laser direct structuring.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.133-136
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• 2010

Laser direct patterning is one of new methods which are able to replace a conventional photolithography. In order reduce the fabrication cost and to improve the luminous efficiency of AC plasma display panels (PDPs), in this experiment, a Q-switched Nd:$YVO_4$ laser was used to fabricate T-shaped indium tin oxide (ITO) display electrodes. For the laser beam scanning speed from 100 mm/sec to 800 mm/sec, T-shaped ITO patterns were clearly obtained and investigated. The experimental results showed that the optimized T-shaped ITO electrode was obtained when the lasers scanning speed was 300 mm/s.

• Journal of Institute of Convergence Technology
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• v.3 no.2
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• pp.39-43
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• 2013

Titanium has been used to satisfy various applications such as bio engineering, aerospace, electronics, automobile. Recently, micro fabrication technologies of metals such as titanium have been required to satisfy many conditions in various fields. To satisfy these demands, micro electrochemical process using laser marking can be an alternative method because it is one of the precision machining and efficient process. Micro electrochemical process using laser marking needs to accomplish form of the oxidized recast layer on metal surface by laser marking. The laser beam marking conditions such as average power, pulse repetition rate and marking speed should be properly selected to form oxidized recast layer. So, the characteristics of titanium surface according to laser marking conditions was investigated through SEM(scanning electron microscope), EDS(energy dispersive spectrometer) and surface roughness analysis.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.69-72
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• 1990

For the effective heat transfering in Lser Diodes, Beam-Lead structure were introduced which is applicable to hybrid Optoelectronic Integrated Circuits. A 5-layer planar structure Laser Diode is fabricated and Beam-Lead is made by Au plating. And carrier was made by etching Si substrate and LD was mounted on a carrier. The thermal resistance was measured and we could certain that Beam-Lead structure behaves well as a heat sink.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.585-586
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• 2012