• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.32-37
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• 2005

We developed a numerical simulator in order to study the Super-RENS/ROM (Super REsolution Near-Field Structure, Read Only Memory) using 3-dimensional FDTD (finite difference time domain) method. The simulation can be performed by three steps. In the first step, we utilized the vector-diffraction theory to calculate the characteristics of incident laser beam from the object-lens to the surface of the disk. At the second step, we fed the calculated result as an input for the main FDTD simulations on the optical layers in the disk structure. After performed the FDTD simulations, we took near-to-far field transformation for the reflected signal, from the surface of the disk to the detector. Finally, we can get reflected signal at the photo-diode. Using this developed simulator, we were able to study about the reading signal from various disk structures as a function of a laser beam position. We calculated reading signals for various pit sizes for Super-ROM structure, and it is found that the simple optical diffraction theory can not explain the reading mechanism of Super-ROM, and more complicated temperature dependent physics must be involved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.8-8
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• 2008

Two-dimensional photonic quasicrystal (PQCs) template patterns have been fabricated on a $1.1{\mu}m$-thick DMI-150 photoresist using a multiple-exposure holographic method. A 442-nm HeCd laser was utilized as a light source and the holographic exposure was carried out at a fixed angle of $\theta=6^{\circ}$. After the first holographic exposure, the sample was rotated to a proper angle and the second exposure was performed to the same manner. This exposure process was repeated n/2 times to obtain n-fold symmetric PQC patterns and then the sample was developed. The fabricated PQCs exhibited 8, 10 and 12-fold rotational symmetry and the diffraction patterns using a 632.8-nm HeNe laser were observed for n-rotation symmetry corresponding n-fold PQCs. The fabricated PQC template patterns were examined using scanning electron microscopy(SEM). Transmission spectra were measured fourier transform infrared(FTIR) spectrometer.

• Journal of the Korean Ceramic Society
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• v.44 no.5 s.300
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• pp.151-154
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• 2007

Yttrium aluminum garnet, $Y_3Al_5O_{12}$ (YAG) is an extensively used solid-state laser host material. YAG nanocrystals were synthesized using low-temperature glycol method, a modified sol-gel method performed at low temperature that consists of a mixture of salts that are mostly nitrates in an aqueous media. Single-phase nanocrystalline YAG was obtained at $850^{\circ}C$, which is a much lower temperature than with other techniques such as a wet-chemical technique. The structural characterization is done by powder X-ray diffraction, scanning electron microscopy and transmission electron microscopy. A crystallite size range of 20-50 nm was observed for the materials prepared at $850-950^{\circ}C$.

• Transactions of the Society of Information Storage Systems
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• v.2 no.2
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• pp.138-143
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• 2006

We developed a numerical simulator in order to study the Super-RENS/ROM (Super REsolution Near-Field Structure, Read Only Memory) using 3-dimensional FDTD (finite difference time domain) method. The simulation can be performed by three steps. In the first step, we utilized the vector-diffraction theory to calculate the characteristics of incident laser beam from the object-lens to the surface of the disk. At the second step, we fed the calculated result as an input for the main FDTD simulations on the optical layers in the disk structure. After performed the FDTD simulations, we took near-to-far field transformation for the reflected signal, from the surface of the disk to the detector. Finally, we can get reflected signal at the photo-diode. Using this developed simulator, we were able to study about the reading signal from various disk structures as a function of a laser beam position. We calculated reading signals for various pit sizes for Super-ROM structure, and it is found that the simple optical diffraction theory can not explain the reading mechanism of Super-ROM, and more complicated temperature dependent physics must be involved.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1627-1630
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300{\sim}450^{\circ}C$ and flow rate of 100${\sim}$700 seem. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.835-844
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• 2001

In this paper, we report the successful growth of crystalline carbon nitride films in Si(100) by a laser-electric discharge method. The laser ablation of the target leads to vapor plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy(AES) were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films with a deposition time of 2 hours is studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.319-322
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• 2004

ZnO nanostructures were formed on a Si substrate by off-axis pulsed laser deposition(PLD) system in which a substrate plane was tilted toward a plume propagation direction. Atomic force microscopy (AFM) showed islands of 20∼40 nm width. From the x-ray diffraction (XRD) pattern exhibiting only (002) ZnO peak, the islands observed in AFM image were found to well crystallized. Optical bandgap enlargement from 3.26 eV to 3.35 and 3.47 eV due to the quantum size effect of ZnO nanostructures were observed by Photoluminescence (PL) at room temperature.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.303-307
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• 2007

ZnO thin films were prepared by pulsed laser deposition on amorphous fused silica substrates at different ambient $O_2$ pressures varying from 0.5 to 500 mTorr, to observe the effect of ambient gas on their crystalline structure, morphology and optical properties. Results of X-ray diffraction, scanning electron microscopy, atomic force microscopy and photoluminescence studies showed that crystallinity, surface features and optical properties of the films significantly depended on the oxygen background pressure during growth. A low oxygen pressure (0.5 mTorr) seems to be suitable for the growth of highly c-axis oriented and smoother films possessing a superior luminescent property. The films grown at the higher $O_2$ pressures (50-500 mTorr) were found to have many defects probably due to an excessive incorporation of oxygen into ZnO lattice. We speculate that the film crystallinity could be affected by the kinetics of atomic arrangement during deposition at the higher oxygen pressures.

• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.76-79
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• 2012

$Tb_3Al_5O_{12}:Ce$ (TAG:Ce) thin films were successfully deposited by a pulsed laser ablation method on a quartz substrate, and low-temperature post-annealing effects on luminescent properties were investigated in detail. TAG:Ce thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The as-deposited films were amorphous, and post-annealing above $700^{\circ}C$ was required for crystallization. The post-annealed TAG:Ce thin films showed strong and broad emission bands around 542 nm and excitations at 451 nm, which all corresponded to transitions between the 4f ground level to the $5d^1$ excited levels of Ce ion.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.108-113
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• 1996

Periodic gratings for 1.55$\mu$m distributed feedback laser diode (DFB LD) have been fabricated by a holographic interference exposure system using an etalon stabilized Ar ion laser. We obtain a good development condition at developer concentration of 65% and obtain etching rate of 1000$\AA$/min at 20.deg. C by the mixed solution HBr:HNO$_{3}$:H$_{2}$O(1:1:10 in volume ratio). We obtain good first order grating with period of 2400${\AA}[\pm}2{\AA}$ at etching time of 45 sec from grating period and diffraction efficiency measurement, and SEM observation of grating fabricated on InP substrate.