• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1280-1282
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• 1997

The oxynitride films were photo-chemically deposited by ArF(wave length: 193nm) excimer laser CVD used to excite and dissociate gas phases $Si_2H_6$, $N_2O$, and $NH_3$ molecules. We obtained various electrical properties when we varied wafer cleaning procedures consisted of a conventional RCA and a two-dip step[4]. The results show the films have low leakage currents and good TZDB properties. We also analyzed the composition of the oxynitride films which have homogeneous composition throughout the film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1242-1247
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• 2003

In order to passivate the GaAs surface, silicon-nitride films were fabricated by using laser CVD method. SiH$_4$ and NH$_3$ were used to obtain SiN films in the range of 100∼300$^{\circ}C$ on p-type (100) GaAs substrate. To determine interface characteristics of the metal-insulator-GaAs structure, electrical measurements were performed such as C-V curves and deep level transient spectroscopy (DLTS). The results show that the hysteresis was reduced and interface trap density was lowered to 1,012 ∼ 1,013 at 100 ∼ 200$^{\circ}C$. According to the study of surface leakage current, the passivated CaAs has less leakage current compared to non-passivated substrate.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1274-1276
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• 1993

The silicon-nitride films formed by laser CVD method are used for passivating GaAs surfaces. The electrical Properties of metal-insulator-GaAs structure are studied to determined the interfacial characteristics by C-V curves and deep level transient spectroscopy(DLTS). The SiN films are photolysisly deposited from $SiH_4\;and\;NH_3$ in the range of $100^{\circ}C-300^{\circ}C$ on P type, (100) GaAs. The hysteresis is reduced and interface trap density is lowered to $10^{12}-10^{13}$ at $100^{\circ}C-200^{\circ}C$. The surface leakage current is studied too. The passivated GaAs have a little leakage current compared to non passivated GaAs.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.5
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• pp.1679-1688
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• 1996

Laser flash technique was applied to measure thermal properties of FGM made by a CVD method. System stability and reproducibility of this measuring system were proved and calibrated with glassy carbon used as reference material. Specimens was prepared by cutting FGM diagonally. Measurements were performed for a wide range of temperatures up to 1500K. Relative heat capacity of the FGM specimen was scattered with in $\pm$13% at room temperature and at high temperature above 1200K, and $\pm$3% at medium temperature range. On the other hand, thermal diffusivity data showed excellent reproducibility and stability through the whole temperature range. In conclusion, the multi-target radiometer can be applied to measure the thermal properties of non homogeneous materials like FGM.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.237-240
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• 1991

In this paper, silicon oxynitride(SiON) films were chemically deposited by 193 nm Excimer laser irradiated parallel to the substrate. the laser pulse energy was 80 mJ, repetetion rate was 80 Hz and the laser average power was 6.4 watt, the gas ratio of $N_2O/NH_3$ was 0.75, the substrate temperature was $300^{\circ}C$, and the chamber pressure was 2 torr. And then, the interface state density($N_{ss}$) was characterized by DLTS(Deep Level Transient Spectroscopy). In addition, the capture cross section($\sigma$) and activation energy(${\Delta}E$) was also obtained. The resulting Nss values were $5.5{\times}10^{10}-3.2{\times}10^{11}(eV^{-1}cm^{-2})$, $\sigma$ was $6.64{\times}10^{-20}-2.114{\times}10^{-17}(cm^2)$, the ${\Delta}E$ of two peaks were $8.93{\times}10^{-2}$(eV), 0.375(eV).

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1116-1118
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• 2005

We studied laser crystallization of amorphous silicon films prepared at ultra low temperatures ($<150^{\circ}C$). Amorphous silicon films having a low content of hydrogen were deposited by using catalytic chemical vapor deposition method. Influence of process parameters on the hydrogen content was investigated. Laser crystallization was performed dispensing with the preliminary dehydrogenation process. Crystallization took place at a laser energy density value as low as $70\;mJ/cm^2$, and the grain size increased with increasing the laser energy. The ELA crystallization of Catalytic CVD a-Si film is a promising candidate for Poly-Si TFT in active-matrix flexible display on plastic substrates.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.85-87
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• 1990

Silicon nitride film was deposited on a silicon wafer using a laser CVD(LCVD) technique, which is based on direct photolysis of $SiH_4/NH_3$ gas mixture by ArF laser beam(${\lambda}=193\;nm$). The refractive index of deposited SiN film is 1.9 at the temperature of $300^{\circ}C$, pressure of 5 torr. The breakdown field strength of LCVD SiN film was 10MV/cm. In IR spectrum, the absorption peak of Si-H, N-H, and Si-N is detected and it is shown that hydrogen is included in SiN film. From analysis of absorption band. it is calculated that density of Si-H, N-H bond is higher than $5{\times}10^{22}cm^{-3}$. LCVD MIS capacitor and PECVD MIS capacitor have injection-type hysteresis but it is known that hysteresis loss of LCVD MIS capacitor is smaller than that of PECVD MIS capacitor. It means that Interface state density of LCVD capacitor is smaller than that of PECVD capacitor. In addition, the flatband voltage($V_{FB}$) of LCVD is smaller than that of PECVD capacitor. And it means that fixed charged density($Q_{FIX}$) of LCVD capacitor is smaller than that of PECVD MIS capacitor.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.213-213
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• 2000

Direct laser vaporization of transition-metal(Co, Ni)/graphite composite pellet produced single wall carbon naotubes(SWNT) in the condensing vapor in a heated flow cylinder-type tube furnace, Transition metal/graphite composite pellet target was made by mixing graphite, Co, and Ni in 98:1:1 atomic weight ratios, pressing the mixed powder, and curing it. The target was placed in a tube furnace maintained at 1200$^{\circ}C$ and Ar inert collision gas continuously flowed into the tube. The 2nd harmonic, 532nm wavelength light from Nd-YAG laser was used to vaporize the tube. The carbon nanotubes produced by the laser vaporization were accumulated on quartz tube wall. The raw carbon nanotube materials were purified with surfactants(Triton X-100) in a ultrasonicator. These carbon nanotubes were analyzed using SEM, XRD, and Raman spectroscopic method. The carbon nanotube growth on the Ni-patterned Si substrate was investigated by the CVD process. Transition-metal, Ni and CH4 gas were used as a catalyst and a reactant gas, respectively. The structure and the phonon frequencies of the carbon nanotubes formed on the patterned Si substrate were measured by SEM and Raman spectrometer.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.70-73
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• 2015

Many studies have used chemical vapor deposition (CVD) to grow graphene. However, CVD is inefficient in terms of production costs, and inefficient for mass production because a transfer process using a catalytic metal is needed. In this study, graphene thin films were grown on single crystal sapphire substrates without a catalytic metal, using pulsed laser deposition (PLD) to resolve these problems. In addition, the growth of graphene using PLD was confirmed to have a close relationship with the substrate temperature.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.662-666
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• 1989

Pure mono Silane(Purity: 99.99%) was used as a thin film source and [$SiH_4$ + $H_2$ (5%)] + [$PH_3$ + $H_2$(0.05%)] mixed dilute gas was used for p-n junction diode. The substrate was P-type silicon wafer (p=$3{\Omega}$ cm) with the direction (100). The crystalline qualities of deposited thin film were investigated by the X-ray diffraction, RHEED and TED patterns and the voltampere characteristics of p-n junction diode was identified by I-V curve.