• Korean Journal of Materials Research
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• v.8 no.7
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• pp.628-633
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• 1998

단사정 HBO2 분막을 무기접착제로 이용하여 선택적 레이저 소결 기술을 적용시켜 알루미나-글래스 복합재료를 제조하였다. 만들어진 green SLS 시험편을 여러 온도에서 열처리하여 글래스-세라믹 복합재료를 얻었다. 글래스의 양이 많을수록 복합재료는 높은 밀도와 높은 굽힘강도를 보여주었다. 열처리 온도 $900^{\circ}C$에서 복합재료는 최대 밀도와 최대 강도를 나타낸다. 이것은 글래스의 낮은 점도로 인한 좋은 유동성 때문에 글래스의 재분배가 이루어졌기에 가능하다고 생각되어진다. 그리고 기공이 많은 열처리한 SLS 시험편에 콜로이드 실리카를 주입시켜 치밀화시켰다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.935-936
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• 2013

• Journal of the Korean Society for Precision Engineering
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• v.25 no.9
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• pp.20-26
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• 2008

• 전자공학회논문지 IE
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• v.43 no.2
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• pp.11-15
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• 2006

In this paper characteristics of polycrystalline silicon crystallized by excimer laser on plastic substrate under 150$^{\circ}C$ is investigated. Amorphous silicon is deposited by rf-magnetron sputter in atmosphere of Ar and He for preventing depletion effect by dehydrogenation as deposition by PECVD. After annealing by 308 nm, 30 Hz, double pulse type XeCl excimer laser, p-chnnel low temperature polycrystalline silicon TFT which maximum mobility is $64cm^2/V{\cdot}s$ at $344mJ/cm^2$ is fabricate.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.4
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• pp.203-208
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• 2011

Recently, from general machine parts and automobile parts using carbon steel to a mold, there has been efforts for improving durability and attrition resistance of these parts. Especially, heat treatment with laser which works fast and automatically can be used for the mass production with high quality. Moreover, local heat treatment can be used to handle with complex and precise parts. Accordingly, we analyzed hardening characteristics of carbon steel using the finite element method and compare the experimental results to have more reliability. We also proved the cause of thermal deformation with temperature and stress distribution by heat treatment. After these analysis and experimental, we found that each maximum hardness of the two tests was 728 Hv and 700 Hv, on condition of $1050^{\circ}C$ heating temperature, and 2 mm/sec laser speed. We also found that difference of surface stress-distribution was occurred, and this makes deformation mode up after heat treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.76-79
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• 2005

$Nd:YVO_4$ 연속발진 레이저(CW laser:Continuous wave laser)로 제작한 다결정 실리콘 박막의 이온도핑 효과를 조사하였다. PECVD로 증착한 비정질 실리콘 박막을 CW 레이저를 조사하여 결정화한 후 $B_2H_6$ 플라즈마 이온 도즈량을 변화시켜 이온 도핑을 하고 급속열처리 방법과 퍼니스 어닐링 방법으로 도펀트 활성화를 하였다. 이온 도핑된 CW 다결정 실리콘 박막의 이온 도즈량에 따른 판저항 변화를 비교하고, 급속열처리(RTA: Rapid Thermal Annealing)와 퍼니스 어닐링(FA: Furnace Annealing) 전후의 결정성 변화를 라만 스펙트럼(Raman spectrum) 을 통하여 분석하였다. 이온 도즈량이 증가함에 따라 판저항은 감소하고, 어닐링 후 이온 도핑에 의해 손상된 박막이 복원됨을 확인 할 수 있다.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.4
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• pp.203-210
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• 2022

In this study, hydrogen embrittlement in Inconel 718 fabricated by selective laser melting (SLM) was investigated. To focus on the effect of the SLM-induced solidification substructure, hydrogen embrittlement behavior of SLM as-built (SLM-AB) sample and that of conventionally produced (Con-S) sample were systematically compared. The detailed microstructural characterization showed that the SLM-AB sample exhibited a solidification substructure including a high density of dislocations and Laves phase, while the Con-S sample showed completely recrystallized grains without any substructure. Although the intrinsic strength in the SLM-AB sample was higher than the Con-S sample, the resistance to hydrogen embrittlement was higher in the SLM-AB sample. Nevertheless, a statistical analysis of the hydrogen-assisted cracks (HACs) revealed that the predominant HAC type of SLM-AB and Con-S samples was similar, i.e., intergranular HAC. The difference in the resistance to hydrogen embrittlement between the SLM-AB and Con-S samples were discussed in terms of the relation between the microstructural feature and its effect on hydrogen accumulation.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.908-913
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• 1997

플라즈마 화학 증착 방법에 의해 corning 7059 유리기판위에 비정질 실리콘 박막을 만들고 고온열처리, 다단계급속열처리, 일차원 선형빔(line shape beam)의 가우스 분포를 가지는 엑시머 레이저 열처리를 이용하여 고상 및 액상의 재결정화를 통해 다결정 실리콘 박막을 제작하였다. 편광된 라만 분광학(Raman spectroscopy)을 통하여 여러 가지 열처리 방법과 기판온도에 따른 다결정 실리콘 박막의 잔류응력을 조사하였다. 레이저 열처리에 의하여 결정화된 실리콘 기판의 경우, 높은 결정화된 체적량과 잔류응력을 갖으며 equaxial결정성을 갖는다. 그러나 이러한 고상 재결정화된 다결정 실리콘 박막은 라만스펙트럼에서 480$cm^{-1}$ /주위에 넓게 퍼져있어 비정질상(amorphous phase)이 함께 존재함을 알 수 있다. 고온열처리와 다단계급속열처리의 경우 잔류응력의 크기는 각각 4.07x$10^{9.}$과 4.56x$10^{9 dyne}$ $\textrm{cm}^2$이다. 또한 엑시머레이저 열처리의 경우 기판온도가 상온에서 40$0^{\circ}C$로 증가할수록 열적인 완화에 의해 잔류응력이 1.35x$10^{10}$에서 8.58x$10^{9}$dyne/$\textrm{cm}^2$으로 감소하는 것을 알 수 있다.다.

• Journal of the korean Society of Automotive Engineers
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• v.24 no.4
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• pp.22-26
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• 2002

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.24-31
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• 2005

Ion shower doping with a main ion source of $P_2H_x$ using a source gas mixture of $PH_3/H_2$ was conducted on excimer-laser-annealed (ELA) poly-Si.The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value using UV-transmittance was found to correlate well with the one measured using Raman Spectroscopy. The sheet resistance decreases as the acceleration voltage increases from 1kV to 15kV at the moderate doping conditions. It, however, increases as the acceleration voltage increases under the severe doping conditions. The reduction in carrier concentration due to electron trapping at uncured damage after activation annealing seems to be responsible for the rise in sheet resistance. Three different annealing methods were investigated in terms of dopant-activation and damage-recovery, such as furnace annealing, excimer laser annealing, and rapid thermal annealing, respectively.