• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.462-462
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• 2012

바이오 플라즈마의 일환으로 대기압 플라즈마 제트 장치를 개발하여 혈액 응고 실험을 하였다. 대기압 플라즈마 제트 장치는 의료용 바늘, 테프론 튜브, 유리관으로 이루어져 있다. 본 실험에 사용된 플라즈마 제트 장치는 두 전극 사이에 유전체로 사용된 유리관이 설치된 유전체 장벽 방전 플라즈마의 한 형태라 할 수 있다. 플라즈마 제트에 주입된 가스는 Ar이며 전기적, 열적 충격이 없다. 출력전압은 1.2 kV, 출력전류는 1.9 mA, 구동주파수는 40 kHz이다. 출혈이 발생한 상처에 조사한 결과, 9 초만에 혈액이 응고되는 것을 확인하였다. 또한, 멀티 플라즈마 제트 장치를 고안하였다. 플라즈마 제트에서 발생되는 플라즈마 양을 증가시킴으로서 대면적으로 활용할 수 있다.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.29-33
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• 2007

Low frequency (400 kHz) Ferrite ICP has been proposed for large area processing. Because the coupling coefficient is close to 1, the transformer matching can be adapted to Ferrite ICP. The transformer matching system is simple. In this paper the new matching system by controlling the turns of transformer using relays is proposed for impedance matching. We developed a simple matching system and characterized it when the turns were changed. It was observed that the 2-channel relay is available for transformer matching.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.245-250
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• 2004

The discharge current oscillation has been measured for various hollow anode widths and its axial positions using a 1㎾-class anode layer hall thruster. As a result, there were thresholds of magnetic flux density for stable discharge. The plasma structure inside the hollow anode was numerically analyzed using the fully kinetic 2D3V Particle-in-Cell (PIC) and Direct Simulation Monte Carlo (DSMC) methods. The results reproduced both stable and unstable operation modes. In the stable operation case, which corresponds to the case with low magnetic flux, the plasma penetrated into the hollow anode deeper than the case with higher magnetic flux density case. This suggests that comparably large substantial anode area should contribute to stable operation.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1609-1611
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• 2001

A large cross-section pulsed electron beam generator of cold cathode type has been developed for industrial applications, for example, waste water cleaning, flue gas cleaning, and pasteurization etc. The operational principle is based on the emission of secondary electrons from cold cathode when ions in the plasma hit the cathode, which are accelerated toward exit window by the gradient of an electric potential. The conventional electron beam generators need an electron scanning beam because the small cross section thermal electron emitter is used. The electron beam of large cross-section pulsed electron beam generator do not need to be scanned over target material because the beam cross section is large by 300$cm^2$. We have fabricated the large cross-sectional pulsed electron beam generator with the peak energy of 200keV and beam diameter of 200mm and obtained the large area electron beam in the air. The electron beam current has been investigated as a function of accelerating voltage, glow discharge current, helium pressure, distance from the exit window and radial distribution in front of the exit window.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1038-1041
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• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.99-100
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• 2005

We have grown carbon nanotubes (CNTs) with a microwave plasma chemical vapor deposition (MPECVD) method, which has been regard as one of the most promising candidates for the synthesis of CNTs due to the vertical alignment, the low temperature and the large area growth. We use methane ($CH_4$) and hydrogen ($H_2$) gas for the growth of CNTs. 60 nm thick Ni catalytic layer were deposited on the TiN coated glass substrate by RF magnetron sputtering method. In this work, we report the effects of pressure on the growth of CNTs. We have changed pressure of processing (10 $\sim$ 20 Torr) deposition of CNTs. SEM (Scanning electron microscopy) images show diameter, length and cross section state CNTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.501-506
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• 2006

Carbon nanotubes (CNTs) were grown with a microwave plasma enhanced chemical vapor deposition (MPECVD) method, which has been regarded as one of the most promising candidates for the synthesis of CNTs due to the vertical alignment, the low temperature and the large area growth. MPECVD used methane ($CH_4$) and hydrogen ($H_2$) gas for the growth of CNTs. 10 nm thick Ni catalytic layer were deposited on the Ti coated Si substrate by RF magnetron sputtering method. In this work, the pretreatment was that the Ni catalytic layer in different microwave power (600, 700, and 800 W). After that, CNTs deposited on different pressures (8, 12, 16, and 24 Torr) and grown same microwave power (800 W). SEM (Scanning electron microscopy) images showed Ni catalytic layer diameter and density variations were dependent with their pretreatment conditions. Raman spectroscopy of CNTs shows that $I_D/I_G$ ratios and G-peak positions vary with pretreatment conditions.

• Korean Journal of Materials Research
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• v.19 no.8
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• pp.437-442
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• 2009

This paper describes an improved strategy for controlling the adhesion force using both the antiadhesion and adhesion layers for a successful large-area transfer process. An MPTMS (3-mercaptopropyltrimethoxysilane) monolayer as an adhesion layer for Au/Pd thin films was deposited on Si substrates by vapor self assembly monolayer (VSAM) method. Contact angle, surface energy, film thickness, friction force, and roughness were considered for finding the optimized conditions. The sputtered Au/Pd ($\sim$17 nm) layer on the PDMS stamp without the anti-adhesion layer showed poor transfer results due to the high adhesion between sputtered Au/Pd and PDMS. In order to reduce the adhesion between Au/Pd and PDMS, an anti-adhesion monolayer was coated on the PDMS stamp using FOTS (perfluorooctyltrichlorosilane) after $O_2$ plasma treatment. The transfer process with the anti-adhesion layer gave good transfer results over a large area (20 mm $\times$ 20 mm) without pattern loss or distortion. To investigate the applied pressure effect, the PDMS stamp was sandwiched after 90$^{\circ}$ rotation on the MPTMS-coated patterned Si substrate with 1-${\mu}m$ depth. The sputtered Au/Pd was transferred onto the contact area, making square metal patterns on the top of the patterned Si structures. Applying low pressure helped to remove voids and to make conformal contact; however, high pressure yielded irregular transfer results due to PDMS stamp deformation. One of key parameters to success of this transfer process is the controllability of the adhesion force between the stamp and the target substrate. This technique offers high reliability during the transfer process, which suggests a potential building method for future functional structures.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.1
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• pp.19-23
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• 2011

Recently, focused ion beam (FIB) applications have been investigated for the modification of VLSI circuit, the MEMS processing, and the localized ion doping, A multi aperture FIB system has been introduced as the demands of FIB applications for high speed and large area processing increase. A liquid metal ion source has problems, a large angular divergence and a metal contamination into a substrate. In this study, a gas ion source was introduced to replace a liquid metal ion source. The gas ion source generated inductively coupled plasma (ICP) in a quartz tube (diameter: 45 mm). Ar gas fed into the quartz was ionized by a 2 turned radio frequency antenna. The Ar ions were extracted by 2 extraction grids. The maximum extraction voltage was 10 kV. A numerical simulation was used to optimize the design of extraction grids and to predict an ion trajectory. As a result, the maximum ion current density was 38 $mA/cm^2$ and the spread of ion energy was 1.6 % for the extraction voltage.

• Korean Journal of Materials Research
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• v.30 no.3
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• pp.142-148
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• 2020

Graphene has attracted the interest of many researchers due to various its advantages such as high mobility, high transparency, and strong mechanical strength. However, large-area graphene is grown at high temperatures of about 1,000 ℃ and must be transferred to various substrates for various applications. As a result, transferred graphene shows many defects such as wrinkles/ripples and cracks that happen during the transfer process. In this study, we address transfer-free, large-scale, and high-quality monolayer graphene. Monolayer graphene was grown at low temperatures on Ti (10nm)-buffered Si (001) and PET substrates via plasma-assisted thermal chemical vapor deposition (PATCVD). The graphene area is small at low mTorr range of operating pressure, while 4 × 4 ㎠ scale graphene is grown at high working pressures from 1.5 to 1.8 Torr. Four-inch wafer scale graphene growth is achieved at growth conditions of 1.8 Torr working pressure and 150 ℃ growth temperature. The monolayer graphene that is grown directly on the Ti-buffer layer reveals a transparency of 97.4 % at a wavelength of 550 nm, a carrier mobility of about 7,000 ㎠/V×s, and a sheet resistance of 98 W/□. Transfer-free, large-scale, high-quality monolayer graphene can be applied to flexible and stretchable electronic devices.