• Journal of Advanced Marine Engineering and Technology
• /
• v.32 no.2
• /
• pp.262-267
• /
• 2008

Plasma immersion ion beam (PIIB) nitriding process is an environmentally benign and cost-effective process, and offers the potential of producing high dose of nitrogen ions in a way of simple, fast and economic technique for the high plasma flux treatment of large surface area with nitrogen ion source gas. In this report PIIB nitriding technique was used for nitriding on austenite stainless steel of AISI304 with plasma treatment at $250{\sim}500^{\circ}C$ for 4 hours, and with the working gas pressure of $2.67{\times}10^{-1}$ Pa in vacuum condition. This PIIB process might prove the advantage of the low energy high flux of ion bombardment and enhance the tribological or mechanical properties of austenite stainless steel by nitriding, Furthermore, PIIB showed a useful surface modification technique for the nitriding an irregularly shaped three dimensional workpiece of austenite stainless steel and for the improvement of surface properties of AISI 304, such as hardness and strength

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.247.1-247.1
• /
• 2014

The capacitive coupled plasma is used widely in the semiconductor industries. Especially, the uniformity of the industrial plasma is heavily related with defect ratio of devices. Therefore, the industries need the capacitive coupled plasma source which can generate the uniform plasma and control the plasma's uniformity. To achieving the uniformity of the large area plasma, we designed multi-powered electrodes. We controlled the uniformity by controlling the power of each electrode. After this work, we started to research another concept of the plasma device. We make the plasma chamber that has multi-ground electrodes imaginary (CST microwave studio) and simulate the electric field. The shape of the multi-ground electrodes is ring type, and it is same as the shape of the multi-power electrodes that we researched before. The diameter of the side electrode's edge is 300mm. We assumed that the plasma uniformity is related with the impedance of ground electrodes. Therefore we simulated the imaginary chamber in three cases. First, we connected L (inductor) and C (capacitor) at the center of multi-ground electrodes. Second, we changed electric conductivity of multi-ground electrode. Third, we changed the insulator's thickness between the center ground electrode and the side ground electrode. The driving frequency is 2, 13.56 and 100 MHz. We switched our multi-powered electrode system to multi-ground electrode system. After switching, we measured the plasma uniformity after installing a variable vacuum capacitor at the ground line. We investigate the effect of ground electrodes' impedance to plasma uniformity.

• Journal of the Korean institute of surface engineering
• /
• v.33 no.2
• /
• pp.69-76
• /
• 2000

The rf plasma chemical vapor deposition is a common method employed for diamond or amorphous carbon deposition. Diamond possesses the strongest bonding, as exemplified by a number of unique properties-extraordinary hardness, high thermal conductivity, and a high melting tempera tore. Therefore, it is very important to investigate the synthesis of semiconducting diamond and its use as semiconductor devices. An inductively coupled rf plasma CVD system for producing amorphous carbon films were developed. Uniform temperature and concentration profiles are requisites for the deposition of high quality large-area films. The system consists of rf matching network, deposition chamber, pumping lines for gas system. Gas mixtures with methane, and hydrogen have been used and Si (100) wafers used as a substrate. Amorphous carbon films were deposited with methane concentration of 1.5% at the process pressure of S torr~20 torr, and process temperature of about $750^{\circ}C$. The nucleation and growth of the amorphous carbon films have been characterized by several methods such as SEM and XRD.

• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.891-894
• /
• 1999

ICP reactor produces high-density and high-uniformity plasma in large area, are has excellent characteristic of direction in the case of etching. Until now, many algorithms used one mesh method. These algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously. And difficult consider am-bipolar drift effect.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.223.2-223.2
• /
• 2015

Polyurethane acrylate (PUA) has been introduced to utilize as a mold material for sub-100 nm lithography as it provides advantages of stiffness for nanostructure formation, short curing time, flexibility for large area replication and transparency for relevant biomedical applications. Due to the ability to fabricate nanostructures on PUA, there have been many efforts to mimic extracellular matrix (ECM) using PUA especially in a field of tissue engineering. It has been demonstrated that PUA is useful for investigating the nanoscale-topographical effects on cell behavior in vitro such as cell attachment, spreading on a substrate, proliferation, and stem cell fate with various types of nanostructures. In this study, we have conducted surface modification of PUA films with micro/nanostructures on their surfaces using plasma treatment. In general, it is widely known that the plasma treated surface increases cell attachment as well as adsorption of ECM materials such as fibronectin, collagen and gelatin. Effect of plasma treatment on PUA especially with surface of micro/nanostructures needs to be understood further for its biomedical applications. We have evaluated the modified PUA film as a culture platform using adipose derived stem cells. Then, the behavior of stem cells and the level of adsorbed protein have been analyzed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.2
• /
• pp.89-94
• /
• 2011

The cause of the thickness non-uniformity in the large area deposition of $SiO_2$ films by PECVD(Plasma Enhanced Chemical Vapor Deposition) was investigated by the plasma diagnostics. The spatial distribution of the plasma species in the chamber was obtained with DLP(Double Langmuir Probe) and the new-designed probe-type QMS(Quadrupole Mass Spectrometer). From the relationship between the spatial distribution of the plasma species and the depositing rate of the $SiO_2$ films, it was conformed that the non-uniform deposition of $SiO_2$ films was related with the spatial distribution of the oxygen radical density and electron temperature.

• Nuclear Engineering and Technology
• /
• v.40 no.6
• /
• pp.459-466
• /
• 2008

The KSTAR Magnet Power Supply (MPS) was dedicated to the SC coil commissioning and $1^{st}$ plasma experiment as a part of the system commissioning. Although many efforts to develop large-current power supplies that are useful for high power electronic devices have been made in various application fields, such as for large metal-plating devices, there were clear discrepancies between conventional power supply technologies and that for the SC coils due to the special SC coil load conditions. Therefore, most of the power supply technologies for the SC coils were a challenge in the domestic research area due to their limited application. However, the MPS commissioning result showed that all of the hardware and controlling software operated well, and this result finally led to the success of SC coil commissioning and the KSTAR $1^{st}$ plasma experiment. This paper will describe key features of KSTAR MPS for the $1^{st}$ plasma experiment, and will also report the commissioning results of the magnet power supplies.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.277.1-277.1
• /
• 2016

We report on synthesis of large-area MoS2 using chemical vapor deposition (CVD). Relatively uniform MoS2 are obtained. To fabricate field-effect transistor (FET) devices, MoS2 films are transferred to another SiO2/Si substrate using polystyrene (PS) and patterned using oxygen plasma. In addition, to reduce contact resistance, synthesis of graphene used as channel. Device characteristics are presented and compared with the reported results.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.11
• /
• pp.496-500
• /
• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to significantly impact terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (RIE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi-Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7% efficiency of mono-crystalline silicon solar cell and 10.2% multi-crystalline silicon solar cell.

• The Journal of Engineering Geology
• /
• v.31 no.3
• /
• pp.433-445
• /
• 2021

Plasma blasting by high voltage arc discharge were performed in laboratory-scale soil samples to investigate the fluid penetration efficiency. A plasma blasting device with a large-capacity capacitor and columnar soil samples with a diameter of 80 cm and a height of 60 cm were prepared. Columnar soil samples consist of seven A-samples mixed with sand and silt by ratio of 7:3 and three B-samples by ratio of 9:1. When fluid was injected into A-sample by pressure without plasma blasting, fluid penetrated into soil only near around the borehole, and penetration area ratio was less than 5%. Fluid was injected by plasma blasting with three different discharge energies of 1 kJ, 4 kJ and 9 kJ. When plasma blasting was performed once in the A-samples, penetration area ratios of the fluid were 16-25%. Penetration area ratios were 30-48% when blastings were executed five times consecutively. The largest penetration area by plasma blasting was 9.6 times larger than that by fluid injection by pressure. This indicates that the higher discharge energy of plasma blasting and the more numbers of blasting are, the larger are fluid penetration areas. When five consecutive plasma blasting were carried out in B-sample, fluid penetration area ratios were 33-59%. Penetration areas into B-samples were 1.1-1.4 times larger than those in A-samples when test conditions were the same, indicating that the higher permeability of soil is, the larger is fluid penetration area. The fluid penetration radius was calculated to figure out fluid penetration volume. When the fluid was injected by pressure, the penetration radius was 9 cm. Whereas, the penetration radius was 27-30 cm when blasting were performed 5 times with energy of 9 kJ. The radius increased up to 333% by plasma blasting. All these results indicate that cleaning agent penetrates further and remediation efficiency of contaminated soil will be improved if plasma blasting technology is applied to in situ cleaning of contaminated soil with low permeability.