• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.1
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• pp.10-14
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• 2004

A large area electron beam generator has been developed for industrial applications, for example, waste water cleaning, flue gas treatment, and food pasteurization. The operational principle is based on the emission of secondary electrons from the cathode when ions in the plasma contact the cathode, which are accelerated toward the exit window by the gradient of the electric potential. Conventional electron beam generators require an electron beam scanning mechanism because a small area thermal electron emitter is used. The electron beam of the large area electron beam generator does not need to be scanned over target material because the beam area is considerable. We have fabricated a large area electron beam generator with peak energy of 200keV, and a beam diameter of 200mm. The electron beam current has been investigated as a function of accelerating voltage and distance from the extracting window while its radial distribution in front of the extracting window has been also measured.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.773-776
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• 2007

A microstructure array has been proposed for micro plasma generation using electroplating and double exposed process. A stable atmospheric plasma has been generated at a low voltage by utilizing the micro electrode gap. Self-aligned microstructure can provide uniform electrode overlap with precisely controlled gap between the electrodes. The proposed structure allows for triode operation, which can expand the generated plasma over a large area by applying a lateral electric field. Electrical characteristics of the micro triode confirm the large numbers of the plasma ions are drifted to the secondary cathode by the lateral electrical field.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.490-490
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• 2013

In semiconductor industry, it is expected that plasma process which use 450 mm source will be used at next generation. However, main obstacle of the large area plasma source is plasma uniformity from it. When electrode is enlarged, field difference between center area and side area reduces the plasma uniformity [1-3]. Therefore we investigate multi-electrode which diminish this field difference.We designed two multi-electrode models. One has two segments and the other has five segments. Each multi-electrode model is connected with two power generator and two matchers. One generator and one matcher is connected with center electrode part. The other one generator and the other one matcher is connected with side electrode part. The ion density is measured at 29 points by using floating harmonic method [4-6]. After measuring the data of each multi-electrode model, we discuss the difference of profile between two models' data.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.141-141
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• 2006

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.384-390
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• 2001

The hollow cathode discharge is a kind of plasma formation scheme in which plasma is formed inside a hollow structure, the cathode, with current to a nearby anode of arbitrary shape. In this scheme, electrons reflex radially within the hollow cathode, establishing an efficient ionization mechanism for gas within the cavity. An existence condition for the hollow cathode effect is that the electron mean-free-path for ionization is of the order of the cavity radius. Thus the size of this kind of plasma source must decrease as the gas pressure is increased. In fact, the hollow cathode effect can occur even at atmospheric pressure for cathode diameters of order 10-100 $\mu\textrm{m}$. That is, the "natural" operating pressure regime for a "micro hollow cathode discharge" is atmospheric pressure. This kind of plasma source has been the subject of increasing research activity in recent years. A number of geometric variants have been explored, and operational requirements and typical plasma parameters have been determined. Large arrays of individual tiny sources can be used to form large-area, atmospheric-pressure plasma sources. The simplicity of the method and the capability of operation without the need for the usual vacuum system and its associated limitations, provide a highly attractive option for new approaches to many different kinds of plasma applications, including plasma surface modification technologies. Here we review the background work that has been carried out in this new research field.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.216-220
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• 1996

In the present paper, a new type of DC arc plasma torch is disclosed. The principles of the new magnetic and fluid dynamic controlled large orifice long discharge tunnel plasma torch is discussed. Two series of DC Plasma Jet diamond film deposition equipment have been developed. The 20kW Jet equipped with a $\Phi$70 mm orifice torch is capable of deposition diamond films at a growth rate as high as 40$\mu\textrm{m}$/h over a substrate area of $\Phi$65 mm. The 100kW high power Jet which is newly developed based on the experience of the low power model is equipped with a $\Phi$120 mm orifice torch, and is capable of depositing diamond films over a substrate area of $\Phi$110 mm at growth rate as high as 40 $\mu\textrm{m}$/h, and can be operated at gas recycling mode, which allows 95% of the gases be recycled. It is demonstrated that the new type DC plasma torch can be easily scaled up to even higher power Jet. It is estimated that even by the 100kW Jet, the cost for tool grade diamond films can be as low as less than ＄4/carat.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.241-245
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• 2006

In this study, the characteristics of large area internal linear ICP sources of 1020mm X 920mm(substrate area is 880 X 660mm) were investigated using two different types of antenna, that is, a conventional serpentine-type antenna and a newly developed multiple U-type antenna. The multiple antenna showed a higher plasma density, a higher radical density, and more plasma stability compared to the serpentine-type antenna, and it appeared from the higher inductively coupling and less standing wave effect compared to the serpentine-type antenna. Using the multiple U-type antenna, the plasma density of $2\times10^{11}/cm^3$ with the plasma uniformity of 4% could be obtained using 15mTorr Ar and 5000W of RF power.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.68-68
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• 2001

Thin films of polycrystalline silicon (poly-Si) is a promising material for use in large-area electronic devices. Especially, the poly-Si can be used in high resolution and integrated active-matrix liquid-crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs) because of its high mobility compared to hydrogenated _amorphous silicon (a-Si:H). A number of techniques have been proposed during the past several years to achieve poly-Si on large-area glass substrate. However, the conventional method for fabrication of poly-Si could not apply for glass instead of wafer or quartz substrate. Because the conventional method, low pressure chemical vapor deposition (LPCVD) has a high deposition temperature ($600^{\circ}C-1000^{\circ}C$) and solid phase crystallization (SPC) has a high annealing temperature ($600^{\circ}C-700^{\circ}C$). And also these are required time-consuming processes, which are too long to prevent the thermal damage of corning glass such as bending and fracture. The deposition of silicon thin films on low-cost foreign substrates has recently become a major objective in the search for processes having energy consumption and reaching a better cost evaluation. Hence, combining inexpensive deposition techniques with the growth of crystalline silicon seems to be a straightforward way of ensuring reduced production costs of large-area electronic devices. We have deposited crystalline poly-Si thin films on soda -lime glass and SiOz glass substrate as deposited by PVD at low substrate temperature using high power, magnetron sputtering method. The epitaxial orientation, microstructual characteristics and surface properties of the films were analyzed by TEM, XRD, and AFM. For the electrical characterization of these films, its properties were obtained from the Hall effect measurement by the Van der Pauw measurement.

• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.271-276
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• 2011

We investigated the possibility of introducing functional groups without damaging surface polymeric chains through the treatment of a polypropylene(PP) film immersed in liquid phase using an atmospheric pressure plasma with large area. The ionic liquid of 1-butyl-3-methylimidazolium tetrafluoroborate: $[BMIM]^{+}[BF_{4}]^{-}$- was successfully applied for generating stable plasmas in the plasma-solution system. We successfully treated the film surface using the plasma-solution system and confirmed various oxygen-containing functional groups formed on the surface of PP film. The surface free energy of PP film was increased with increasing plasma treatment time and power. It also showed a maximum value at the PP sample treated in the ionic liquid solution of 1.5 M. ATR-FTIR analyses revealed the increase of various carbonyl groups(1,726 $cm^{-1}$, 1,643 $cm^{-1}$) and OH groups$(3,100{\sim}3,500\;cm^{-1})$ after plasma treatment of PP film, and XPS also supported the ATR-FTIR result.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.5
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• pp.34-39
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• 2022

The ion implantation technology changes the chemical state of the surface of a material by implanting ions on the surface. It improves the wear resistance, friction characteristics, etc. Plasma ion implantation can effectively reinforce a surface by implanting a sufficient amount of plasma nitrogen ions and using the injection depth instead of an ion beam. As plasma ion implantation is a three-dimensional process, it can be applied even when the surface area is large and the surface shape is complicated. Furthermore, it is less expensive than competing PVD and CVD technologies. and the material is The accommodation range for the shape and size of the plasma is extremely large. In this study, we improved wear resistance by implanting plasma nitrogen ions into a carbide end mill tool, which is frequently used in high-speed machining