• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1364-1366
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• 1998

An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay. pixel charging ratio, level-shift of the pixel voltage were simulated with varying the parameters. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

• ETRI Journal
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• v.41 no.1
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• pp.23-31
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• 2019

Since the late 20th century, there has been rapid development in the display industry. Only 30 years ago, we used big cathode ray tube displays with poor resolution, but now most people use televisions or smartphones with very high-quality displays. People now want images that are more realistic, beyond the two-dimensional images that exist on the flat screen, and digital holography-one of the next-generation displaysis expected to meet that need. The most important parameter that determines the performance of a digital hologram is the pixel pitch. The smaller the pixel pitch, the higher the level of hologram implementation possible. In this study, we fabricated the world-smallest $3-{\mu}m$-pixel-pitch holographic backplane based on the spatial light modulator technology. This panel could display images with a viewing angle of more than $10^{\circ}$. Furthermore, a comparative study was conducted on the fabrication processes and the corresponding holographic results from the large to the small pixel-pitch panels.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.25 no.6
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• pp.498-503
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• 2016

Many types of robot systems are used in the mass production line of thin film solar cells and flat panel displays. There are some issues such as the deflection and the vibration of the end-effector because robots handle large and heavy substrates at high speed. Heavy payload and high speed cause much vibration because the end-effector (fork) is made of carbon fiber reinforced polymer because of its light weightiness and sufficient stiffness. This study performs a dynamic simulation of an 8.5G solar cell substrate handling robot, including rigid and flexible bodies and a vibration controller. The fifth polynomial trajectory and the zero vibration derivative input shaping algorithm are applied. The vibration reduction is also proved in the experiments.

• The Journal of the Convergence on Culture Technology
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• v.7 no.1
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• pp.662-667
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• 2021

Vibrotactile feedback is a major function of the latest touch displays, which greatly improves the user's operability and immersion when interacting with the interface on the screen. In this study, we propose a vibrotactile actuator suitable for mounting on the back side of a mid- to large-sized display because it can generate a strong vibration output by applying an electrostatic force-based mechanism and can be manufactured in a thin flat panel type. The proposed actuator was developed in a structure capable of amplifying the vibration force by alternating up and down with electrostatic force by the upper and lower electrodes that are spaced apart from the electrically grounded mass suspended from a radial leaf spring. As a result of the performance evaluation, the developed bar-type module with two built-in actuators showed excellent vibration output of up to 3.3 g at 170 Hz, confirming the possibility of providing haptic feedback in medium and large touch displays.

• Journal of Magnetics
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• v.21 no.3
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• pp.348-355
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• 2016

Precision motion stages used in the manufacturing process of flat-panel displays have inevitably low settling performance due to their huge mass and bulky structures. In order to improve the settling performance, several methods of frame vibration compensation have been developed so far. These methods are used to cancel the vibration by imposing a counter force or modifying the resonance mode of the frame of the stage. To compensate the frame vibration, high force actuators are required. In this paper, a mighty voice coil actuator is proposed to generate the counter force against the frame vibration. The proposed voice coil actuator has an axis-symmetric rectangular structure to achieve a large force with simple and low cost fabrication. Also, the voice coil actuator allows radial clearance up to ${\pm}4mm$. Using an optimized design process and a magnetic circuit model, the power consumption is minimized while the required force is obtained. With a power of 322 W, the VCA has been designed to have a maximum force of 574 N with a force constant of 164 N/A. Experimental results verified the force constant of the fabricated voice coil actuator is well matched with the designed value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.53-56
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.194-194
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• 2006

Polymer light-emitting diodes(PLEDs) have great potential application in large area flat panel displays and general lighting so intense academic and industrial research, and impressive scientific and technological progress has been achieved in this field. However, the efficiency and stability of PLEDs till need to be improved in order to fully realize the advantages of low cost and ease of fabrication provided by organic materials. Here, we report our effort to enhance the PLED' s performance in two approaches : 1) Utilizing nano-structured materials such as nano particles, clay, nano porous silica in active layer 2) Modifying the device structure in nano scale to improve not only the device efficiency but also its stability.

• Journal of Magnetics
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• v.17 no.1
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• pp.9-12
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• 2012

Attempts to dope carbon nanotube (CNT) with impurities in order to control the electronic properties of the CNT is a natural course of action. Boron is known to improve both the structural and electronic properties. In this report, we study the field emission properties of Boron-doped double-walled CNT (DWCNT). Boron-doped DWCNT films were fabricated by catalytic decomposition of tetrahydrofuran and triisopropyl borate over a Fe-Mo/MgO catalyst at $900^{\circ}C$. We measured the field emission current by varying the doping amount of Boron from 0.8 to 1.8 wt%. As the amount of doped boron in the DWCNT increases, the turn-on-field of the DWCNT decreases drastically from 6 V/${\mu}m$ to 2 V/${\mu}m$. The current density of undoped CNT is 0.6 mA/$cm^2$ at 9 V, but a doped-DWCNT sample with 1.8 wt% achieved the same current density only at only 3.8 V. This shows that boron doped DWCNTs are potentially useful in low voltage operative field emitting device such as large area flat panel displays.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2005.11a
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• pp.37-41
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• 2005

When screen size of the Flat Panel Display (FPD) becomes larger, the traditional photo-lithography using photomasks and UV lamps might not be possible to make patterns on Photo Resist (PR) material due to limitation of the mask size. Though the maskless photo-lithography using UV lasers and scanners had been developed to implement large screen display, it was very slow to apply the process for mass-production systems. The laser exposure system using 405 nm semi-conductor lasers and Digital Micromirror Devices (DMD) has been developed to overcome above-mentioned problems and make more than 100 inches FPD devices. It makes very fine patterns for full HD display and exposes them very fast. The optical engines which contain DMD, Micro Lens Array (MLA) and projection lenses are designed for 10 to 50 ${\mu}m$ bitmap pattern resolutions. The test patterns for LCD and PDP displays are exposed on PR and Dry Film Resists (DFR) which are coated or laminated on some specific substrates and developed. The fabricated edges of the sample patterns are well-defined and the results are satisfied with tight manufacturing requirements.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.35-38
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• 2014

Flat panel displays fabricated on glass substrate use amorphous Si for data processing circuit. Recent progress in display technology requires a new material to replace the amorphous Si, and ZnO is a good candidate. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. ZnO is usually grown by sputtering using ZnO ceramic target. However, ceramic target is more expensive than metal target, and making large area target is very difficult. In this work we studied characteristics of ZnO thin-film transistor grown by rf sputtering using Zn metal target and $CO_2$. ZnO film was grown at $450^{\circ}C$ substrate temperature, with -70 V substrate bias voltage applied. By using these methods, our ZnO TFT showed $5.2cm^2/Vsec$ mobility, $3{\times}10^6$ on-off ratio, and -7 V threshold voltage.