• Current Photovoltaic Research
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• v.7 no.2
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• pp.29-32
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• 2019

Large band gap attenuation of CdS nanoclusters in hybrid sol gel matrix comprised of 3-(trimethoxysilyl)propyl methacrylate (TMSPM), 15 wt. % zirconium, and various amounts of cadmium acetate was observed after $H_2S$ exposure. Hybrid sol gel matrixes were prepared by hydrolysis and condensation reactions. The sol gels contained with various amount of cadmium acetate were spin coated to glass substrates and exposed to $H_2S$ gas. The UV-visible absorption peaks were shifted toward blue with increasing the amount of CdS nanoclusters and were shifted to the red after thermal process. Significant amount of -OH absorption peaks were reduced after thermal process. Strong room temperature photoluminescence (PL) of CdS nanoclusters was observed after exposing to $H_2S$ gas. The PL intensity increased for several minutes and slowly decreased thereafter. The luminescence peaks were continuously shifted toward blue as the time passed. Extraordinary Stokes shift (approximately 160 nm) was observed.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1353-1364
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• 1996

Recently semiconductor doped glasses have attracted attention as nonlinear optical materials because of their large third order nonlinear optical properties. The transparent and homogeneous CdS-doped SiO2 glass thin films were obtained by the dip=coating process of the sol-gel method. Thin films were consisted of glasses containing CdS microcrystallites which were formed by dissolved Cd2+ and S2- ions in a SiO2 matrix solutions. A subsequent thermal treatment of this samples led the formation of colloidal agglomerates and finally of microcrystallites. The size of CdS microcrystallites was about 4 to 15 nm after thermal treatments at various heating conditions. From the optical absorption spectra of the CdS-doped SiO2 glass films it was found that the absorption edge was blue-shifted compared with that of the bulk CdS crystal(~2, 4 eV) and that the amount of energy shift was inversely proportional to the crystal size. And the band gap energy increased with the decrease in crystallite size indicating that the quantum size effects occured.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.150-154
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• 2000

We investigated the quantum well intermixing (QWI) of a compressively strained InGaAs/InGaAsP multiple quantum well (MQW) by using impurity free vacancy diffusion technique. The samples with InGaAs/$SiO_2$ capping layer showed a higher degree of intermixing compared to that of InP/$SiO_2$ capping layer after rapid thermal annealing (RTA). Band-gap shift difference as large as 123 meV (195 nm) was observed between samples capped with InGaAs/$SiO_2$ and with InP/$SiO_2$ layer at RTA temperature of $700^{\circ}C$. Using the InGaAs/$SiO_2$ cap layer, the band-gap wavelength of MQW was changed by the intermixing from 1.55 $\mu\textrm{m}$ band to 1.3 $\mu\textrm{m}$ band with a wavelength shift of a 237 nm. The transform from MQW structure to homogenous alloy was observed above the RTA temperature of $700^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.50-53
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• 1995

In this paper we have obtained property by considering the change of optical energy gap as a function of photo-does for exposing photo on Ag/a-Se$\sub$75/Ge$\sub$25/ thin films. This U-type property was obsered for all photo-exposing except for blu-pass filtered Hg lamep. Expecially, very large band shift(~0.3[eV]) is obtained by exposing He-Ne laser (6328[${\AA}$]). It is impossible to explain this property for exposing He-Ne and semiconductor laser through DWP model, which was explained for photo-exposing above the energy gap. Therefore we suggest a new modified model of DWP model for Ag/a-Se$\sub$75/Ge$\sub$25/ bilayer thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.187-189
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• 1994

The degree of the photodoping process in Ag(100 )/a-$Se_{75}Ge_{25}$(2000 ) films has been measured as a funcition of photon energy between 1.5eV and 2.9eV with the exposing time. The window of Ag occurs at 3400 (3.65eV) and Ag is almost transparent in this region. It was shown that transmitance is always constant (40∼50%) for the wavelength ranges of our experiment. It was found that the energy gap of a unexposed a-$Se_{75}Ge_{25}$ film is 1.81eV. Ag photodoping process result in the photodarkenting effect which the absorption edge shift to the large wavelength. Especially, we could obtain very large band shut ( ∼0.3eV) resulting in exposing He-Ne laser(6328[ ]). From the result of our experimental, we suggest that Ag photodoping process depends on the photon absorption in Ag.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.472-477
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• 1995

The degree of the photodoping process in Ag(100[.angs.])/a-Se$_{75}$Ge$_{25}$(1500[.angs.]) films has measured as a function of the photon energy between 1.5[eV] and 2.9[eV] with the exposing time. The "window" characteristics of Ag occur at 3400[.angs.] (3.65[eV]) and Ag is almost transparent in this region. It is shown that transmittance is almost constant (40-50%) for the wavelength ranges of our experiment. It is found that the energy gap of a unexposed a-Se$_{75}$Ge$_{25}$ film is 1.81[eV]. Ag photodoping process results in the photodarkening effect which the absorption edge shifts to the long wavelength. Especially, very large band shift (-0.3[eV]) is obtained by exposing He-Ne laser(6328[.angs.]).. We have obtained "the U-type property" for Ar He-Ne and semiconductor laser. It is associated with the variation of energy gap(E$_{g}$) with photo-dose and substantially is explained by DWP model.l.gap(E$_{g}$) with photo-dose and substantially is explained by DWP model.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.883-886
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• 2008

In optical information technology, an electro-controllable Photonic Band Gap (PBG) in a photonic crystal (PC) material is potentially useful for the manipulation of light. Despite a great deal of research on PBGs, the reliable use of electro-active PBG material systems is restricted to only a few cases because of the complex and limiting nature of the structures involved. Here, we propose a PBG system that uses a liquid crystal (LC) polymer composite. The composite is made of nematic LCs (NLCs) embedded in polymeric helical networks of photo-polymerized cholesteric LCs (CLCs). The composite film shows a large field-induced reversible color shift over 150 nm of the reflection band, due to the reorientational undulation of the helical axis, similar to the Helfrich effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.409-409
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• 2014

Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

• Korean Journal of Materials Research
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• v.33 no.11
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• pp.491-496
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• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.