• Title/Summary/Keyword: Large area deposition

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The performance of large-area organic solar cells by spray deposition process

  • Park, Seon-Yeong;Park, Dong-Seok;Kim, Do-Geun;Kim, Jong-Guk;Kim, Ju-Hyeon;Gang, Jae-Uk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.291-291
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    • 2010
  • Organic solar cells have attracted much interest due to the potential advantage of the lightness, simple solution processing and flexibility. Until recently, the focus of organic solar cells research has been on optimization of material processing to improve the power conversion efficiency. However, area scaling is an important position for alternative to the market dominating solar cells. Spray deposition technologies have advantage of less material wastage and possibility of large scale photoactive area coating when compared with spin coating process. We investigated the performance of organic solar cells as a function of active area using two types of deposition process. The commonly used process is spin coating which can be fabricated organic materials deposition for devices. Spray deposition process compare with spin coating for large-area organic solar cells. The spray deposition organic layer shows excellent performance up to the active area of $4\;cm^2$ with the PCE of ~3.0 % under AM.1.5 simulated illumination with an intensity of $100mW/cm^2$. This indicates that the spray deposition process can be used as a mass production process for evaluating large-area organic solar cells.

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Fabrication of Pentacene Thin Film Transistors by using Organic Vapor Phase Deposition System (Organic Vapor Phase Deposition 방식을 이용한 펜타센 유기박막트랜지스터의 제작)

  • Jung Bo-Chul;Song Chung-Kun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.6
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    • pp.512-518
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    • 2006
  • In this paper, we investigated the deposition of pentacene thin film on a large area substrate by Organic Vapor Phase Deposition(OVPD) and applied it to fabrication of Organic Thin Film Transistor(OTFT). We extracted the optimum deposition conditions such as evaporation temperature of $260^{\circ}C$, carrier gas flow rate of 10 sccm and chamber vacuum pressure of 0.1 torr. We fabricated 72 OTFTs on the 4 inch size Si Wafer, Which produced the average mobility of $0.1{\pm}0.021cm^2/V{\cdot}s$, average subthreshold slope of 1.04 dec/V, average threshold voltage of -6.55 V, and off-state current is $0.973pA/{\mu}m$. The overall performance of pentacene TFTs over 4 ' wafer exhibited the uniformity with the variation less than 20 %. This proves that OVPD is a suitable methode for the deposition of organic thin film over a large area substrate.

YBCO - film production by thermal co-evaporation for microwave and electrical power applications

  • Prusseit, W.;Semerad, R.
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.145-145
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    • 2000
  • Large area YBCO - films are series produced by thermal co-evaporation using a deposition scheme known as Garching process, which allows intermittent oxygen supply in a high vacuum ambient by an oxygen cup spaced closely underneath the moving substrates. The deposition area of 9" diameter is capable to handle very large wafers up to 8" diam. or numerous smaller wafers. The large distance between substrates and boat sources and an elaborate heater design guarantee excellent film uniformity over the entire deposition area. YBCO - films deposited by this technique are commercially fabricated for a variety of applications - the most prominent are resistive fault current limiters and microwave filters for mobile or satellite communications. IMUX and OMUX - filters are currently space qualined by Robert Bosch GmbH and are expected to be launched and installed on an experimental platform of the international space station ALPHA in 2001. Both of the above applications require quite different film specifications on the one hand, but at the same time extremely high uniformity and reproducibility on the other hand, since hundreds of YBCO - films are combined to large systems or have to be approved for manned space missions. The success of such projects is direct evidence that the technique of thermal evaporation is readily capable to meet these high demands and has become the major deposition technique to support the emerging HTS market.

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Template-directed Atomic Layer Deposition-grown $TiO_2$ Nanotubular Photoanode-based Dye-sensitized Solar Cells

  • Yu, Hyeon-Jun;Panda, Sovan Kumar;Kim, Hyeon-Cheol;Kim, Myeong-Jun;Yang, Yun-Jeong;Lee, Seon-Hui;Sin, Hyeon-Jeong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.239.1-239.1
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    • 2011
  • Dye sensitized solar cells (DSC) are promising devices for inexpensive, nontoxic, transparent, and large-scale solar energy conversion. Generally thick $TiO_2$ nanoporous films act as efficient photoanodes with their large surface area for absorbing light. However, electron transport through nanoparticle networks causes the slowdown and the loss of electron transport because of a number of interparticle boundaries inside the conduction path. We have studied DSCs with precisely dimension-controlled $TiO_2$ nanotubes array as photoanode. $TiO_2$ nanotubes array is prepared by template-directed fabrication method with atomic layer deposition. Well-ordered nanotubes array provides not only large surface area for light absorbing but also direct pathway for electrons with minimalized grain boundaries. Large enlongated anatase grains in the nanotubes could enhance the conductivity of electrons, but also suppress the recombination with holes through defect sites during diffusion into the electrode. To study the effect of grain boundaries, we fabricated two kinds of nanotubes which have different grain sizes by controlling deposition conditions. And we studied electron conduction through two kinds of nanotubes with different grain structures. The solar cell performance was studied as a function of thickness and grain structures. And overall solar-to-electric energy conversion efficiencies of up to 7% were obtained.

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Cylindrical Hollow Cathode Sputtering Deposition for Uniform Large Area YBCO Thin Film (균질한 대면적 YBCO 박막증착을 위한 실린더형 할로우 캐소드 스퍼터링 증착법)

  • Suh, Jeong-Dae;Han, Seok-Kil;Sung, Gun-Yong;Kang, Kwang-Yong
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.67-70
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    • 1999
  • We have fabricated YBa$_2Cu_3O_{7-x}$ thin films by cylindrical hollow cathode sputtering. For 2 inch diameter of MgO (100) substrate, we obtained the zero resistance temperature in the range from 83 K to 86 K and thickness uniformity better than 5 % over the whole area. Also, the average deposition rate was 100nm/h which is higher than 10 times compare to conventional off-axis sputtering method. These results indicate that cylindrical hollow cathode sputtering seems to have unique capabilities for high rate and homogeneous deposition of large area thin film.

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Synthesis of Single Crystal Diamond by Variation of Deposition Pressure by HFCVD (HFCVD에 의한 증착압력 변화에 따른 Single Crystal Diamond 합성)

  • Kim, Min Su;Bae, Mun Ki;Kim, Seong-Woo;Kim, Tae Gyu
    • Journal of the Korean Society for Heat Treatment
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    • v.33 no.1
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    • pp.20-24
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    • 2020
  • Single crystal diamonds are in great demand in such fields as mechanical, electronic applications and optoelectronics. Large area single crystal diamonds are attracting attention in future industries for mass production and low cost. In this study, hot filament CVD (HFCVD) is used to grow large area single crystal diamond. However, the growth rate of large area single crystal diamond using HFCVD is known to be very low. The goal of this study is to use single crystal diamond substrates in HFCVD with methane-hydrogen gas mixtures to increase the growth rate of single crystal diamond and to optimize the conditions by analysing the effects of deposition conditions for high quality crystallinity. The deposition pressure, the ratio of CH4/H2 gas, the substrate temperature and the distance between the filament and the substrate were optimized. The sample used a 4×4 (mm2) size single crystal diamond substrate (100), the CH4/H2 gas ratio was fixed at 5%, the substrate temperature was synthesized to about 1000℃. At this time, the deposition pressure was changed to three types of 50, 75, 85 Torr and deposited. Finally, optimization was investigated under pressure conditions to analyse the growth rate and quality of single crystal diamond.

Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene

  • Cho, Hyunjin;Lee, Changhyup;Oh, In Seoup;Park, Sungchan;Kim, Hwan Chul;Kim, Myung Jong
    • Carbon letters
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    • v.13 no.4
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    • pp.205-211
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    • 2012
  • Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.

Graphene Growth with Solid Precursor-Polyethylene (고체 전구체-폴리에틸렌을 이용한 그래핀 성장)

  • Ryu, Jongseong;An, Sung Jin
    • Korean Journal of Materials Research
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    • v.29 no.5
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    • pp.304-310
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    • 2019
  • Chemical vapor deposition method using $CH_4$ gaseous hydrocarbons is generally used to synthesize large-area graphene. Studies using non-gaseous materials such as ethanol, hexane and camphor have occasionally been conducted. In this study, large-area graphene is synthesized via chemical vapor deposition using polyethylene as a carbon precursor. In particular, we used a poly glove, which is made of low-density polyethylene. The characteristics of the synthesized graphene as functions of the growth time of graphene and the temperature for vaporizing polyethylene are evaluated by optical microscopy and Raman spectroscopy. When the polyethylene vaporizing temperature is over $150^{\circ}C$, large-area graphene with excellent quality is synthesized. Raman spectroscopy shows that the D peak intensity increased and the 2D peak intensity decreased with increasing growth time. The reason for this is that sp3 bonds in the graphene can form when the correct amount of carbon source is supplied. The quality of the graphene synthesized using polyethylene is similar to that of graphene synthesized using methane gas.

HIGH TEMPERATURE SUPERCONDUCTING THIN FILMS PREP ARED BY PULSED LASER DEPOSITION

  • Park, Yong-Ki;Kim, In-Seon;Ha, Dong-Han;Hwang, Doo-Sup;Huh, Yun-Sung;Park, Jong-Chul
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.430-436
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    • 1996
  • We have grown superconducting thin films on various substrates using a pulsed laser deposition (PLD) method. $YBa_2Cu_3O_7-\delta$ (YBCO) superconducting thin films with the superconducting transition temperature ($T_{c. offset}$) of 87K were grown on Si substrates using yittria-stabilized zirconia (YSZ) and $CeO_2$ double buffer layers. We have developed a large area pulsed laser deposition system. The system was designed to deposit up to 6 different materials on a large area substrate up to 7.5cm in diameter without breaking a vacuum. The preliminary runs of the deposition of YBCO superconducting thin films on $SrTiO_3$ substrate using this system showed a very uniform thickness profile over the entire substrate holder area. $T_{c}$ of the deposited YBCO thin film, however, was scattered depending on the position and the highest value was 85K.

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Large Area Bernal Stacked Bilayer Graphene Grown by Multi Heating Zone Low Pressure Chemical Vapor Deposition

  • Han, Jaehyun;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.239.2-239.2
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    • 2015
  • Graphene is a most interesting material due to its unique and outstanding properties. However, semi-metallic properties of graphene along with zero bandgap energy structure limit further application to optoelectronic devices. Recently, many researchers have shown that band gap can be induced in the Bernal stacked bilayer graphene. Several methods have been used for the controlled growth of the Bernal staked bilayer graphene, but it is still challenging to control the growth process. In this paper, we synthesize the large area Bernal stacked bilayer graphene using multi heating zone low pressure chemical vapor deposition (LPCVD). The synthesized bilayer graphenes are characterized by Raman spectroscopy, optical microscope (OM), scanning electron microscopy (SEM). High resolution transmission electron microscopy (HRTEM) is used for the observation of atomic resolution image of the graphene layers.

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