• Bulletin of the Korean Chemical Society
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• v.30 no.3
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• pp.657-660
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• 2009

The surface of $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ cathode particle was modified by lanthanum based oxide to improve electrochemical property and thermal stability. The XRD pattern of surface layer was indexed with that of $La_4NiLiO_8$. The discharge capacity of modified electrode was higher than that of pristine sample, specially at fast charge-discharge rate and high cut-off voltage. In the DSC profile of the charged sample, the generation of heat by exothermic reaction was decreased by surface modification. Such enhancement may by attributed to the presence of stable lanthanum based oxide, which effectively suppressd the reaction between electrode and electrolyte on the surface of $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ electrode.

• Journal of Powder Materials
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• v.20 no.6
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• pp.453-459
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• 2013

Lanthanum/gadolinium zirconate coatings are deposited via suspension plasma spray with suspensions fabricated by a planetary mill and compared with hot-pressed samples via solid-state reaction. With increase in processing time of the planetary mill, the mean size and BET surface area change rapidly in the case of lanthanum oxide powder. By using suspensions of planetary-milled mixture between lanthanum or gadolinium oxide and nano zirconia, dense thick coatings with fully-developed pyrochlore phases are obtained. The possibilities of these SPS-prepared coatings for TBC application are also discussed.

• Korean Journal of Materials Research
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• v.19 no.9
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• pp.462-467
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• 2009

The Charge Trap Flash (CTF) memory device is a replacement candidate for the NAND Flash device. In this study, Pt/$Al_2O_3/La_2O_3/SiO_2$/Si multilayer structures with lanthanum oxide charge trap layers were fabricated for nonvolatile memory device applications. Aluminum oxide films were used as blocking oxides for low power consumption in program/erase operations and reduced charge transports through blocking oxide layers. The thicknesses of $SiO_2$ were from 30 $\AA$ to 50 $\AA$. From the C-V measurement, the largest memory window of 1.3V was obtained in the 40 $\AA$ tunnel oxide specimen, and the 50 $\AA$ tunnel oxide specimen showed the smallest memory window. In the cycling test for reliability, the 30 $\AA$ tunnel oxide sample showed an abrupt memory window reduction due to a high electric field of 9$\sim$10MV/cm through the tunnel oxide while the other samples showed less than a 10% loss of memory window for $10^4$ cycles of program/erase operation. The I-V measurement data of the capacitor structures indicated leakage current values in the order of $10^{-4}A/cm^2$ at 1V. These values are small enough to be used in nonvolatile memory devices, and the sample with tunnel oxide formed at $850^{\circ}C$ showed superior memory characteristics compared to the sample with $750^{\circ}C$ tunnel oxide due to higher concentration of trap sites at the interface region originating from the rough interface.

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.364-369
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• 2000

Silicon nitride with adding La$_2$O$_3$ was sintered by gas pressure sintering (GPS) technique at $1950^{\circ}C$, in $N_2$ gas at 3 MPa, for 2h. Mechanical properties such as hardness, flexural strength, and fracture toughness were determined as a function of the GPS holding time and the contents of La$_2$O$_3$ in silicon nitride. Also machinability of silicon nitride ball with various GPS holding time and amount of La$_2$O$_3$ was evaluated by magnetic fluid grinding (MFG) method. In this study it was found that machinability was influenced significantly with La$_2$O$_3$ contents. However, the different GPS holding time did not affect the machinability very much.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.162-162
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• 2004

• Journal of the Korean Ceramic Society
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• v.43 no.3 s.286
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• pp.162-168
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• 2006

The perovskites with nominal compositions $La_{0.8}Sr_{0.2}Fe_{1-x}M_xO_3$ (M=Co, Mn, Ni, x=0.1-0.3) were fabricated by a solid-state reaction method as cathode materials of low-temperature operating Solid Oxide Fuel Cells (SOFCs). X-ray diffraction analysis and microstructure observation for the sintered samples were performed. The ac complex impedance were measured in the temperature range $600-900^{\circ}C$ in air and fitted with a Solatron ZView program. The electrical conductivity and polarization resistance of $La_{0.8}Sr_{0.2}Fe_{1-x}M_xO_3$ (M=Co, Mn, Ni, x=0.1-0.3) were characterized systematically. The porosities of the sintered samples were in the range of 25% to 38%. The polarization resistance of $La_{0.8}Sr_{0.2}Fe_{0.7}M_{0.3}O_3$ was $0.291{\Omega}cm^2\;at\;700^{\circ}C$.

• Korean Journal of Materials Research
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• v.7 no.3
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• pp.196-202
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• 1997

Perovskite lanthanum doped lead titanate ($(Pb,La)TiO_{3}$ or PLT) thin films were successfully fabricated on Pt/TijSiO.iSi substrates at the temperatures as low as $440~500^{\circ}C$ by eleclron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVII). Since the volatilities of the MC sources arid oxide molecules (especially Ph oxide) increased with increasing deposition temperature, the film deposition rate and the (I'b + La)/'Ti ratio decreased Stoichiometric perovskite PL'T films with good dielectric and leakeage current properties were obtained at the temperatures of $460~480^{\circ}C$. The lanthanum content of the film was nearly directly propotional to $La(DPM)_{3}$ flow rate. As the La/Ti ratio increased from 3.0 to 9.5%, the dielectric constant increased from 360 to 650 and the leakeage current density at 100kV/cm electric field decreased from $4{\times}10^{-5}$ to $4{\times}10_{-8}A/cm^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.1
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• pp.14-19
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• 2013

We have successfully synthesized $Bi_{4-x}La_xTi_3O_{12}$ (x~2) having Aurivillius-type layered perovskite structure from exfoliated layered perovskite oxide of $K_2La_2Ti_3O_{10}$ with Ruddlesden-Popper structure. The reaction between the exfoliated lanthanum titanate nanosheets and BiOCl nanocrystal resulted in the formation of polycrystalline $Bi_{4-x}La_xTi_3O_{12}$ (x~2) after heating above $700^{\circ}C$. Colloidal suspension of the nanosheets could be obtained by intercalating ethylamine (EA) into the protonated lanthanum titanate, $H_2La_2Ti_3O_{10}$, derived from $K_2La_2Ti_3O_{10}$. Transmission electron microscopic (TEM) analysis show that the exfoliated lanthanium titanate nanosheets have a thickness of a few nano meters. According to X-ray diffraction (XRD) analysis, the exfoliated lanthanium titanate was found to be transformed into $Bi_{4-x}La_xTi_3O_{12}$ (x~2) after restacking with BiOCl and subsequent thermal treatment at > $700^{\circ}C$.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.163-167
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• 2004

TiAl(La)N thin films were oxidized in vacuum of about 7 Pa to reduce the oxidation of WC-Co as a substrate. The oxidation rate constants of the thin films were quantified by an assumption of parabolic oxidation. Increasing AI content significantly decreased the parabolic oxidation rate constant. A simultaneous addition of AI and La was more effective to reduce the oxidation rate. The parabolic oxidation rate constant of $Ti_{0.66}$ $Al_{0.32}$ $La_{ 0.02}$N thin film at 1273 K showed about ten times lower than that of TiN. The addition of a small amount of La with Al induced the preferential formation of dense $\alpha$ $-Al_2$$O_3$ film in oxide film, leading to the abrupt reduction of oxidation rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2005.02a
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• pp.125-125
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• 2005