• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.121-124
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• 1996

It is well known that the metallo- phthalocyanine (MPcs) are sensitive to toxic gaseous molecules such as NO$_2$and also chemically and thermally stable. Therefore, lots of MPcs have been studied for the potential chemical sensor for NO$_2$gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, thin films of octa(2-ethylhexyloxy) copper-phthalocyanine were prepared by Langmuir -Blodgett method and characterized by using UV-VIS spectroscopy and ellipsometry. Transfer condition, and characterization of LB films were investigated and preliminary results of current-voltage(I-V) characteristics of these films exposed to NO$_2$gas as a function of film thickness, temperature and temperature were discussed.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1244-1246
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• 1997

In conducting systems based on Langmuir - Blodgett (LB) films, tetracyanoquinodimethane(TCNQ) derivatives have been extensively studied as electron acceptor molecules. We have fabricated N-docosyl N'-methyl viologen diTCNQ (DMVT) anion radical LB film and investigated the FT-IR, ESR, and AFM images as the optical, magnetic properties and morphology of the LB film. We have measured in-plane electrical conductivity with number of layers. The in-plane conductivities are approximately $10^{-7}{\sim}10^{-6}\;S/cm$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.7
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• pp.753-759
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• 1992

For the fabrication of the microscale memory or electrical devices, Langmuir-Blodgett(LB) method is the most possible candidate. N-Alkylquinolium-TCNQ compounds were synthesized. The structure of the compounds were identified by the NMR spectroscopy and the purity were checked to be good by the elemental analysis. The surface pressure($\pi$) was measured at the air-water interface. The isotherm showed two transitions at 30mN/m and 45mN/m. The LB films were deposited by the home-made Kuhn type apparatus. The transfer ratio($\tau$) of the deposition was more than 0.95 for the up-stroke and less than 0.4 for the down-stroke. The absorbance peaks of the LB films appear at around 420nm and 700-820nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.99-102
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• 1994

The use of preformed polymers and their cross-linking have been a attempted in order to improve the intrinsic fraqility of monolayers and Langmuir-Blodgett (LB)films and to make their technological applications possible. It has shown that an imidization followed a polyion-complexation can stabilize the LB films against heat and solvents. And when the polymer structure was properly designed concurrent removal of the alkyl tails together with imide formation could be accomplished. In this paper we present a characteristic monolayer behavior of polymer with pendent polythers and carboxyls it’s polyion-complexed LB film with subphase polymer PAA and a possible skeletonization of the LB film by thermal imidization. Also deposition status of LB films are evaluated by using QCM

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1115-1121
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• 1998

MLS capacitor with lipid ultra thin films were deposited by Langmuir-Blodgett (LB) method on the silicon wafer. The current versus voltage and capacitance versus voltage relationships are depend on the applied voltage, electrode area and electrode materials. LB films deposited were made of L-$\alhpa$-DLPC, the 1 layer’s thickness of 35${\AA}$ was measured by ellipsometer. And MLS capacitor with different electrode materials, the work function of these materials was investigated to increase the leakage current. The result indicated the lower leakage current and very high saturation value of capacitance was reached within 700-800 pF when the two electrode was Ag. And $\varepsilon$1, $\varepsilon$2 versus photon energy showed good film formation.

• Journal of the Korean Applied Science and Technology
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• v.16 no.4
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• pp.281-286
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• 1999

We carried out this subject to observe photoisomerization using 8A5H and phospholipid(DLPC) containing azobenzene group which has reversible to cis-trans by light irradiation. We investigated the photoisomerization and property of the monolayer film on quartz substrate prepared by the mixture of 8A5H and phospholipid deposited using Langmuir-Blodgett(LB) method. It was found that the absorption spectrum of the 8A5H and phospholipid LB monolayer was induced to photoisomerization by alternate light irradiation. And the absorbance of both the solution of mixtures of 8A5H-phospholipid and LB film was reversibly changed by the acid-base exposure and alternate temperatures.

• Bulletin of the Korean Chemical Society
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• v.19 no.5
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• pp.544-548
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• 1998

A Monte Carlo simulation incorporated with the genetic algorithm is presented to describe the defect known as "transition from Y-to X-type deposition" of the cadmium arachidate Langmuir-Blodgett multilayer film. Simulation is performed based on the detachment models of XY-type deposition. The transition is simulated by introducing a probability of surface molecule detachment considering interaction between neighboring molecules. The genetic algorithm is incorporated into Monte Carlo simulation to get the optimum value of the probability factors. The distribution of layers having different thickness predicted by the simulation correlates well with the measured distribution of thickness using the small-angle X-ray reflectivity. The effect of chain length and subphase temperature on the detachment probability are investigated using the simulation. Simulation results show that an increase (or a decrease) of two hydrocarbon chain is roughly equivalent to the detachment probability to a temperature decrease (or increase) of 15 K.

• Journal of Sensor Science and Technology
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• v.7 no.4
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• pp.254-262
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• 1998

Multilayer Langmuir-Blodgett (LB) films coated on quartz crystal microbalance (QCM) of octa-substituted metallophhtalocyanines ($MPc(OEH)_8$, M = Cu, Co, and Sn) and dihydrogen phthalocyanines ($H_2Pc(OEH)_8$) were used to quantify $NO_2$ concentrations. They were exposed to various concentrations of $NO_2$ in dry $N_2$. Among the four phthalocyanines we tested, the metal-free $H_2Pc(OEH)_8$ was observed to be most sensitive to $NO_2$. However, its LB film showed a partially irreversible behavior, that is part of the frequency change due to $NO_2$ adsorption could not be recovered even after purging with pure $N_2$ gas for an extended period. Examining the spectra of NMR and FTIR revealed fact that the irreversible portion of frequency change was due to ether groups in the linkage between side chains and the Pc unit. In order to remove the effect of such initial deactivation, on $NO_2$ quantification experiment, a freshly fabricated LB film was treated at a high concentration of $NO_2$ so that the ether sites were saturated. A pretreated LB film showed a reproducible performance for repeated uses. The $CuPc(OEH)_8$ LB film showed a satisfactory sensing performance down to as low as 4 ppm. For the $H_2Pc(OEH)_8$ LB film, the lower detection limit was found to be 35ppb of $NO_2$. In order to make the experimental condition more realistic, the carrier gas, dry nitrogen, was replaced by air. It was observed that the presence of oxygen, a weak electron acceptor, reduced the sensitivity and thus increased the sensing limit to hundreds of ppb. Results of experiments with moisture added showed that the interference of moisture was quite severe.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.674-679
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• 1996

Using the home made Kuhn type LB (Langmuir - Blodgett) film's deposition apparatus, We measured the displacement current of monolayer film on the water surface. The obtained displacement current had each different pattern by the kind of solution while varying pressure of the monolayer. Solution of 4 - octyl - 4' - (5 - carboxyl - pentamethyleneoxy ) - azobenzene (8A5H) and stearic acid (CH$_{3}$(CH$_{2}$)$_{16}$COOH) (C18) were spreaded at the air water interface respectively, and the current induced by the dynamic behavior of molecules were pressed by barrier. Displacement current of 8A5H measured small current than C18 at same condition and it was positive direction when increasing pressure but it was negative direction when decreasing pressure. Also, Two patterns of displacement current were symmetrical form and appeared repeatedly. The C18 has unsymmetrical form of displacement current and weak current when decreasing pressure (expansion). The C18 molecules have two distinct peak values of displacement current that show that the orientations of molecules were changed largely at this points. From these results, we obtained that the 8A5H has more elasticity than the C18.8.C18.