• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1799-1800
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• 2007

Radial Basis Function Network (RBFN)을 이용하여 플라즈마 전자밀도를 모델링하였다. RBFN의 예측성능은 학습인자의 함수로 최적화하였다. 체계적인 모델링을 위해 통계적인 실험계획법이 적용되었으며, 실험은 반구형 유도 결합형 플라즈마 장비를 이용하여 수행이 되었다. 전자밀도 측정에는 Langmuir probe가 이용되었다. 최적화된 GA-RBFN모델을 일반 RBFN모델과 비교하였으며, 11%정도 모델의 예측성능을 향상시켰다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.186-186
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• 2015

레이저 홀로그램에서 추출한 입자 데이터와 Langmuir probe로 측정한 이온 플럭스간의 개선된 상관관계를 보고한다. 레이저 홀로그램 센서 시스템을 이용하여 척 온도 변화에 따른 플라즈마 공간에서의 입자에너지 분포를 이미징하였다. 진공에너지분포를 뺀 에너지분포에 나타나는 두 종류의 분포에 관여하는 전체 입자수 분포는 이온플럭스 데이터와 전체 온도 범위에서 매우 유사한 경향성을 보였다.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1938-1939
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• 2007

Radial Basis Function Network (RBFN)을 이용하여 플라즈마 전자밀도를 모델링하였다. RBFN의 예측성능은 학습인자의 함수로 최적화하였다. 체계적인 모델링을 위해 통계적인 실험계획법이 적용되었으며, 실험은 반구형 유도결합형 플라즈마 장비를 이용하여 수행이 되었다. 전자밀도측정에는 Langmuir probe가 이용되었다. 최적화된 RBFN모델을 통계적인 회귀 모델과 비교하였으며, 59%정도 모델의 예측성능을 향상시켰다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.334-334
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• 2012

다음 세대 웨이퍼 공정인 450mm 웨이퍼 공정을 위한 이중 주파수 유도결합 플라즈마 소스를 이용하여 각각의 안테나에 파워를 인가하고, 이 때 방전되는 플라즈마의 특성을 Langmuir probe를 통하여 확인할 수 있었다. 또한 인가되는 파워를 조절하여 플라즈마 내의 전자에너지를 조절할 수 있다는 가능성을 확인할 수 있었다.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.1-5
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• 2014

The plasma density distribution in between the electrode and lateral wall of a narrow gap CCP was investigated. The plasma density distribution was obtained using single Langmuir probe, having two peaks of density distribution at the center of electrode and at the peripheral area of electrodes. The plasma density distribution was compared with the RF fluctuation of plasma potential taken from capacitive probe. Ionization reactions obtained from numerical analysis using CFD-$ACE^+$ fluid model based code. The peaks in two region for plasma density and voltage fluctuation have similar spatial distribution according to input power. It was found that plasma density distribution between the electrode and the lateral wall is closely related with the local ionization.

• Publications of The Korean Astronomical Society
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• v.15 no.spc2
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• pp.45-52
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• 2000

Four plasma instruments are currently under development for KAISTSAT-4 (K-4) which is scheduled for launch in 2002. They are the Solid-State Telescope, Electro-Static Analyzer, Langmuir Probe, and the Scientific Magnetometer, that will respectively allow in-situ detection of high energy and low energy components of auroral particles, ionospheric thermal electrons, and magnetic field disturbances. These instruments, together with the Far-ultraviolet IMaging Spectrograph, will provide micro-scale physics of Earth's polar ionosphere with detailed spectral information that has not been previously achieved with other space missions. In this paper, we review the concept of the four space plasma instruments as well as the anticipated results from the instruments.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.287-292
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• 1997

This study was tried to form the silica waveguide using high density plasma. Plasma characteristics have been investigated as a function of etch parameters using a single Langmuir probe and optical emission spectroscopy(OES). As etch parameters, $CF_4/CHF_3$ ratio, bias power, and source power were chosen as main variables. The oxide etch characteristics of inductively coupled plasma(ICP) dry etcher such as the etch rate, etch profile, and surface roughness were investigated s a function of etch parameters. On the basis of these results, the core pattern of the wave guide composed of $SiO_2-P_2O_5$ was formed. It was confirmed that the etch rate of $SiO_2-P_2O_5$ core layer was 380 nm/min and the aluminum selectivity to oxide, that is, mask layer was approximately 30:1. The SEM images showed vertical etched profiles and minimal loss of pattern width.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.91-96
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• 1997

The electrical characteristics and the plasma parameters of planar inductively coupled plasmas (ICP) have been measured. The resistance of the total load including the coil and the plasma varied from 1 to 4 W and the inductance from 1.5 m to 2 mH when the power was changed from 100 to 1000 W and the pressure from 1 to 10 mTorr. The density of electron measured by Langmuir probe was over $10^{11}/\textrm{cm}^3$ and the temperature varied between 3 and 5 eV as the process conditions were changed. Bias modulation was adopted as a new method to improve the selectivity of $SiO_2$on Si in $C_4F_8$ (octafluorocyclobutane) plasma. The selectivity was improved as the duty ratio decreased, but the etch rate of $SiO_2$decreased below 400$\AA$/min. $H_2$addition to $C_4F_8$ plasma showed that the etch selectivity could be higher than 50 and the etch rate of $SiO_2$over 2000$\AA$/min when 60% $H_2$was added.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.63-69
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• 1999

The characteristic parameters of high density plasma source (Helical Resonator) have been measured with Langmuir probe to get the plasma density electron temperature, ion current density, etc. Optical emission spectra of Si and SiCl have been analyzed in $Cl_2$$/poly-Si system to elucidate etching mechanism. In this system, the main reaction to remove silicon atoms on the surface is proceeding mostly through chemical reaction, not pure physical reaction. The emission intensity of SiCl (chemical etching product) increases much faster than Si (pure physical etching product) with increasing the concentration of impurities (P). This is due to the electron transfer from substrate to the surface via Si-Cl bond. As a result, Si-Cl bond becomes more ionic and mobile, therefore the Cl-containing etchant forms $SiCl_x$ with surface more easily. Consequently, for the removal of Si atom from poly silicon surface, the chemical etching is more favorable than physical etching with increasing P concentrations.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.161-166
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• 2005

The plasma ion density in AC-PDP has shown to be increased from $5.6{\times}10^{11}cm^{-3}$ to $9.0{\times}10^{11)cm^{-3}$ as the Xe mixture ratio to neon increase from 1 % to 10 %, respectively, at fixed pressure of 400 Torr, by using the micro-Langmuir probe. It is noted that the plasma ion density is density increases as the gas pressure increases in this experiment. The electron temperature decreases from 2.3 to 1.2 eV as the Xe mole fraction increases from 1 % to 10 % at fixed pressure of 400 Torr, which is measured by the micro Langmuir probe and high-speed ICCD camera in this experiment. It is noted that the electron temperature decreases as the gas pressure increases from 150 to 400 Torr in this experiment. It is also observed that the exited Xe atom density and the plasma ion density are in strong correlation sharp between each other in this experiment. It is noted that $5.2{\times}10^{12}cm^{-3}$ in the $1s_5$ metastable state and $1.2{\times}10^{12}cm^{-3}$ in the $1s_4$ resonance state for the PDP cell with gap of 50 um distances under the fixed gas pressure of 400 Torr and Xe content ratio of 10 %.