• 제목/요약/키워드: Lab

검색결과 14,275건 처리시간 0.045초

Measurement of Energy bands of the MgO Layer in AC-PDPs

  • Jeoung, S.J.;Lee, H.J.;Son, C.G.;Kim, J.H.;Park, E.Y.;Hong, Y.J.;You, N.L.;Lee, S.B.;Han, Y.G.;Jeoung, S.H.;Song, K.B.;Moon, M.W.;Oh, P.Y.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.906-909
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    • 2006
  • The secondary electron emission coefficient $({\gamma})$ of the cathode is an important factor for improving the discharge characteristics of AC-PDPs because of its close relationship to discharge voltage. In AC-PDPs, MgO is most widely used as a surface protective layer. In this experimental, we have investigated the electronic structure of the energy band structure of the MgO layer responsible for the high ${\gamma}$. The MgO layers have been deposited by electron beam evaporation method, where the $O_2$ partial pressures have been varied as 0, $5.2{\times}10^{-5}$ torr, $1.0{\times}10^{-4}$ torr, and $4.1{\times}10^{-4}$ torr, in this experiment. It is noted that work function that is energy gap between surface and first defect level of MgO layer has the lowest value for the highest O2 partial pressure of $4.1^{\ast}10^{-4}$ Torr.

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Influence of the degradation of MgO protective layer on the Surface profiles and discharge characteristics in AC-PDP.

  • Lee, Soo-Beom;Jeoung, J.M.;Ko, B.D.;Oh, P.Y.;Moon, M.W.;Lee, J.H.;Lim, J.E.;Lee, H.J.;Han, Y.G.;Yoo, N.L.;Jeoung, S.H.;Son, C.G.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1207-1210
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    • 2005
  • The MgO protective layer provides protection from the discharge, lowers the discharge voltage and prolongs the AC-PDP lifetime. We have investigated the characteristics of degradation of MgO protective layer, which correlates to the image-sticking[1] and the lifetime in AC-PDP. The degraded MgO have been changed the surface morphology of MgO. It was found that panel lifetime depended on degradation of MgO protective.

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중간지원조직의 리빙랩 현황과 플랫폼으로서의 발전 가능성 탐색 (Exploring Possibilities of Intermediary Living Lab as a Platform)

  • 성지은;한규영
    • 기술혁신학회지
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    • 제20권4호
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    • pp.915-938
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    • 2017
  • 본 연구는 중간지원조직 주도의 리빙랩 사례를 살펴보고 리빙랩 플랫폼으로의 발전가능성을 탐색한다. 분석 사례는 국내에서 중간지원조직 주도로 리빙랩 플랫폼을 구축한 대표 사례인 '서울혁신파크리빙랩', 성남 고령친화종합체험관의 '한국시니어리빙랩', '재난대응분야 리빙랩'을 대상으로 한다. 분석결과 세 가지 사례 모두 사용자 패널을 구축하여 리빙랩 플랫폼을 형성하고 내 외부 조직에 리빙랩 운영 서비스를 제공하기 위한 과정이 진행되었다. 또한 기술플랫폼에 4Ps 기반의 거버넌스 플랫폼이 결합된 공통적인 특징을 도출할 수 있었다. 그러나 각 사례가 내포하고 있는 의의와 성격, 추진체계는 서로 다른 양상을 보인다. 현재 국내의 리빙랩 플랫폼은 확산되어 가는 초기 단계이기 때문에 향후 리빙랩 플랫폼은 개별적으로 진행되고 있는 리빙랩 경험을 공유하여 공동학습이 진행될 필요가 있다. 이를 통해 관련 유사 사업과의 연계 및 협력 방안을 모색하고, 리빙랩 관련 제도적 기반 및 인프라 정비를 공동으로 추진할 필요가 있다.

Active-Matrix Cathodes though Integration of Amorphous Silicon Thin-Film Transistor with triode -and Diode-Type field Emitters

  • Song, Yoon-Ho;Cho, Young-Rae;Hwang, Chi-Sun;Kim, Bong-Chul;Ahn, Seong-Deok;Chung, Choong-Heui;Kim, Do-Hyung;Uhm, Hyun-Seok;Lee, Jin-Ho;Cho, Kyoung-Ik
    • Journal of Information Display
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    • 제2권3호
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    • pp.72-77
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    • 2001
  • Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.

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Design of RF coupler for KIRAMS-13;Korea Institute of Radiological & Medical Sciences-13

  • Jung, In-Su;An, Dong-Hyun;Kim, Yu-Seok;Yang, Tae-Gun;Kim, Jea-Hong;Jang, Hong-Seok;Hong, Bong-Hwan;Lee, Min-Yong;Hong, Sung-Seok;Chai, Jong-Seo;Oh, Bong-Hun
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2003년도 ICCAS
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    • pp.2203-2205
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    • 2003
  • KIRAMS-13, the first medical cyclotron developed by domestic technique, is used to produce radio-isotope such as $^{18}F$ whose life time is relatively short through test operation. For high-power operation of charged particle accelerators, the power coupler must withstand enormous stresses due to charging induced by high RF power passing through. High-power RF testing with peak power in excess of 30kW has been performed on prototype power coupler for KIRAMS-13 normal conducting cavities. CST MICROWAVE STUDIO(CST MWS) is used for fundamental RF Design, and power coupler is manufactured according to fundamental power coupler design requisite. The qualification of the couplers has occurred for the time being only in a limited set of conditions as the available RF system and control instrumentation are under improvement.

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Ultra low temperature polycrystalline silicon thin film transistor using sequential lateral solidification and atomic layer deposition techniques

  • Lee, J.H.;Kim, Y.H.;Sohn, C.Y.;Lim, J.W.;Chung, C.H.;Park, D.J.;Kim, D.W.;Song, Y.H.;Yun, S.J.;Kang, K.Y.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.305-308
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    • 2004
  • We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

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The Study of a-Si Film Crystallization using an XeCl Laser Annealing on the Plastic Substrate

  • Kim, Do-Young;Suh, Chang-Ki;Shim, Myung-Suk;Kim, Chi-Hyung;Yi, Jun-Sin;Lee, Min-Chul;Han, Min-Gu
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.634-638
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    • 2003
  • We reported the a-Si crystallization using a XeCl excimer laser annealing on the plastic substrate. The poly-Si film is able to grow in the low temperature and light substrate like a plastic. For the preparation of sample, substrate is cleaned by organic liquids. The film of $CeO_{2}$ layer as the buffer layer was grown by sputtering methods. After a-Si film deposition using ICPCVD, the film was crystallized by XeCl excimer laser. In this paper, we present the crystallization properties of a-Si on the plastic substrate

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Code development and preliminary validation for lead-cooled fast reactor thermal-hydraulic transient behavior

  • Chenglong Wang;Chen Wang;Wenxi Tian;Guanghui Su;Suizheng Qiu
    • Nuclear Engineering and Technology
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    • 제56권6호
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    • pp.2332-2342
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    • 2024
  • Lead-cooled fast reactors (LFRs) have a wide range of application scenarios, which require the thermal-hydraulic characteristics of LFRs to be reliable. In the present paper, the Lead-cooled fast reactor Thermal-Hydraulic Analysis Code LETHAC was developed, including the models of pipe, heat exchanger, and pool. To verify the correctness of LETHAC, two experimental facilities and three experimental cases were selected, including GFT and PLOFA tests for NACIE-UP and Test-1 for CIRCE. The calculated results show the same and consistent trend with the experimental data, but there are some discrepancies. It can be found that LETHAC is suitable and reliable in predicting the transient behavior of lead-cooled system.