• 한국전기전자재료학회논문지
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• 제25권8호
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• pp.616-619
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• 2012

Oxides possess several interesting properties, such as ferroelectricity, magnetism, superconductivity, and multiferroic behavior, which can effectively be used oxide electronics based on epitaxially grown heterostructures. The microscopic properties of oxide interfaces may have a strong impact on the electrical transport properties of these heterostructures. It was recently demonstrated that high electrical conductivity and mobility can be achieved in the system of an ultrathin $LaAlO_3$ film deposited on a $TiO_2$-terminated $SrTiO_3$ substrate, which was a remarkable result because the conducting layer was at the interface between two insulators. In this study, we observe that the current-voltage characteristics exhibit $LaAlO_3$ thickness dependence of electrical conductivity in $TiO_2$-terminated $SrTiO_3$. We find that the $LaAlO_3$ layers with a thickness of up 3 unit cells, result in highly insulating interfaces, whereas those with thickness of 4 unit cells and above result in conducting interfaces.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
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• pp.122-123
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• 2010

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.452-452
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• 2011

Using ab initio calculations, we reveal the origins of the extraordinarily increased electric conductivity of the LaAlO3/SrTiO3 interface. In both of the two (LaAlO3)m/ SrTiO3 heterojunction models (m=3, 5), the oxygen atoms in the cells were displaced toward the n-type interface and the Ti-centered octahedron structure was compressed along the [001] direction by the atomic reconstructions at the (LaAlO3)m/(SrTiO3)4 interfaces. As a result, the 3dxy orbital of the Ti atom was preferentially occupied due to the lowered energy state of the 3dxy orbital, which arises from the crystal field asymmetry. We reason that the extra electrons occupy the 3dxy orbital are accumulated at the interface by the displacement of the oxygen atoms. This accumulation contributes to the conductivity of the n-type interface. In addition, through a comparison of the atomic displacements and charge accumulation amounts between the two thickness models (m=3, 5), the thickness-dependency of the conductivity can be explained.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.171.2-171.2
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• 2016

The 2-dimensiona electron gas (2DEG) layers have opened tremendous interests in the heterooxide interfaces formed between two insulating materials, especially between LaAlO3 and $SrTiO_3$. The 2DEG layers exhibit extremely high mobility and carrier concentrations along with metallic transport phenomena unlike the constituent oxide materials, i.e., $LaAlO_3$ and $SrTiO_3$. The current work inserted artificially the interfacial layer, $Sr_xCa_{1-x}TiO_3$ between $LaAlO_3$ and $SrTiO_3$, with the aim to controlling the 2-dimensional transports. The insertion of the additional materials affect significantly their corresponding electrical transports. Such features have been probed using DC and AC-based characterizations. In particular, impedance spectroscopy was employed as an AC-based characterization tool. Frequency-dependent impedance spectroscopy have been widely applied to a number of electroceramic materials, such as varistors, MLCCs, solid electrolytes, etc. Impedance spectroscopy provides powerful information on the materials system: i) the simultaneous measurement of conductivity and dielectric constants, ii) systematic identification of electrical origins among bulk-, grain boundary-, and electrode-based responses, and iii) the numerical estimation on the uniformity of the electrical origins. Impedance spectroscopy was applied to the $LaAlO_3/Sr_xCa_{1-x}TiO_3/SrTiO_3$ system, in order to understand the 2-dimensional transports in terms of the interfacial design concepts. The 2-dimensional conduction behavior system is analyzed with special emphasis on the underlying mechanisms. Such approach is discussed towards rational optimization of the 2-dimensional nanoelectronic devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.366.2-366.2
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• 2014

Impedance spectroscopy allows for simultaneous characterization of interface-controlled materials and/or devices in terms of electrical and dielectric aspects. Recently, there have tremendous interests in 2-dimensional electron gas layers (2DEGs) involving $LaAlO_3$ and $SrTiO_3$ whose features incorporates extremely high mobility and carrier concentrations along with metallic responses unlike the constituents, $LaAlO_3$ and $SrTiO_3$. Impedance spectroscopy offers the following unique features, such as simultaneous determination of conductivity and dielectric constants, identification of electrical origins among bulk-, grain boundary-, and electrode-based responses. Impedance spectroscopy was applied to the 2DEG $LaAlO_3/SrTiO_3$ system, in order to extract the electrical and dielectric information operating in the 2DEG system. The unique responses of the 2DEG system are investigated in terms of temperature and device structures. The underlying mechanism of the 2DEG system is proposed with the aim to optimizing the high-mobility 2DEG responses and to expedite the associated devices towards the high-density integrated chips.

• 한국세라믹학회지
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• 제35권7호
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• pp.647-647
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• 1998

비대칭적인 전극 구조를 가지는 Pb(Zr,Ti)$O_3$(PZT) 박막의 비대칭적인 스위칭 특성을 연구하기 위해 Pulsed Laser Deposituin(PLD)방법으로 $LaAlO_3$ 기판 위에 (La,Sr)$CoO_3$/Pb(Zr,Ti)$O_3$/(La,Sr)$CoO_3$(LSCO) 다층구조를 성장시켰다. PZT 박막 캐시터의 전극이 모두 같은 조성일 때, 즉 $(La_0.5Sr_0.5)CoO_3$(LSCO)일 때 PZT 박막의 이력곡선은 대칭성을 보여주고 있다. 그러나 산화물 전극의 조성이 변할 때 PZT 박막 캐패시터는 비대칭성을 보여주고 있다. $LaCoO_3(LCO)$를 상층 전극, $La_0.5,Sr_0.5)CoO_3$(LSCO)를 하층 전극으로 사용하였을 때 이력 곡선은 음의 방향으로 분극된 상태가 불안정 하여 음의 잔류 분극의 완화 현상을 보여준다. 반면 상층 전극이 LSCO, 하층 전극이 LCO인 PZT 박막 캐패시터는 양의 방향의 분극 상태가 불안정하여 양의 잔류 분극이 완화현상을 보여준다. 이러한 이력 곡선의 완화 현상은 LCO/PZT 계면에서의 전자 밴드 구조의 변형에 의한 내부 전계의 형성 때문이라 생각할 수 있다. 내부 전계는 LCO/PZT와 LSCO/PZT 계면에서의 전자 밴드 구조의 변형에 의한 내부 전계의 형성 때문이라 생각할 수 있다.내부 전계는 LCO/PZT 계면에서의 인가된 전압 강하 차이에 의해 발생되며 전압 강하는 각각의 계면에서 0.6V와 -0.12V의 크기를 갖는다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.480-483
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• 2001

Epitaxial rutile-TiO$_2$ and anatase-TiO$_2$ films were grown at 80$0^{\circ}C$ on $Al_2$O$_3$ (1102) and LaAlO$_3$ (001), respectively, using pulsed laser deposition. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also successfully deposited epitaxial rutile-TiO$_2$ and anatase-TiO$_2$ films on conductive RuO$_2$ and La$_{0.5}$Sr$_{0.5}$CoO$_3$ electrodes, respectively Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO$_2$ film grown on RuO$_2$ showed a very broad peak in the visible light region. An epitaxial anatase-TiO$_2$ film grown on La$_{0.5}$Sr$_{0.5}$CoO$_3$ showed a strong peak with a threshold energy of 3.05 eV 3.05 eV

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.480-483
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• 2001

Epitaxial rutile-$TiO_2$ and anatase-$TiO_2$ films were grown at $800^{\circ}C$ on $Al_2O_3$ (1102) and $LaAlO_3$ (001), respectively, using pulsed laser deposition. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also successfully deposited epitaxial rutile-$TiO_2$ and anatase-$TiO_2$ films on conductive $RuO_2$ and $La_{0.5}Sr_{0.5}CoO_{3}$ electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-$TiO_2$ film grown on $RuO_2$ showed a very broad peak in the visible light region. An epitaxial anatase-$TiO_2$ film grown on $La_{0.5}Sr_{0.5}CoO_{3}$ showed a strong peak with a threshold energy of 3.05 eV.

• 마이크로전자및패키징학회지
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• 제31권1호
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• pp.43-48
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• 2024

SrTiO₃ (STO) 기판 위에 성장된 LaAlO₃ (LAO) 계면에서의 이차원 전자 가스 (2DEG)의 발견은 복합 산화물 이종 구조를 기반으로 한 혁신적인 전자소자 연구의 장을 제공함으로써 많은 관심을 받아왔다. 하지만 LAO 박막을 형성하기 위하여, 일반적으로 물리기상증착법(PVD)을 기반으로 하는 펄스 레이저 증착 (PLD) 등의 기법이 주로 사용되어 왔으나, 공정 비용이 많이 들며 LAO 내 La와 Al의 정밀한 조성 제어가 어려운 단점이 있다. 본 연구에서는 PVD에 비해 경제적인 대안인 용액 기반 공정을 사용하여 LAO 박막을 제조하였고, 그 전기적 특성을 평가하였다. LAO 전구체 용액의 농도를 다르게 하여 LAO의 두께를 2에서 65 nm까지 변화시켰으며, 각 두께에 따른 면저항 및 캐리어 농도를 도출하였다. 진공 열처리 후 형성된 전도성 채널의 면저항 값은 0.015에서 0.020 Ω·sq^-1 범위로 나타났으며, 이러한 결과는 기존 문헌과 비교하였을 때 LAO와 STO 사이의 계면에서의 전자 이동뿐만 아니라 계면으로부터 떨어져 있는 STO bulk 영역으로의 전자 전도를 시사한다. 본 연구 결과는 용액 기반 공정을 통한 2DEG 형성 및 제어를 구현한 것으로, 공정 비용을 줄이고 전자 소자 제조에서 보다 광범위한 응용 가능성을 제시한다는 점에 그 의의가 있다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.