• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.616-619
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• 2012

Oxides possess several interesting properties, such as ferroelectricity, magnetism, superconductivity, and multiferroic behavior, which can effectively be used oxide electronics based on epitaxially grown heterostructures. The microscopic properties of oxide interfaces may have a strong impact on the electrical transport properties of these heterostructures. It was recently demonstrated that high electrical conductivity and mobility can be achieved in the system of an ultrathin $LaAlO_3$ film deposited on a $TiO_2$-terminated $SrTiO_3$ substrate, which was a remarkable result because the conducting layer was at the interface between two insulators. In this study, we observe that the current-voltage characteristics exhibit $LaAlO_3$ thickness dependence of electrical conductivity in $TiO_2$-terminated $SrTiO_3$. We find that the $LaAlO_3$ layers with a thickness of up 3 unit cells, result in highly insulating interfaces, whereas those with thickness of 4 unit cells and above result in conducting interfaces.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.122-123
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• 2010

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.452-452
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• 2011

Using ab initio calculations, we reveal the origins of the extraordinarily increased electric conductivity of the LaAlO3/SrTiO3 interface. In both of the two (LaAlO3)m/ SrTiO3 heterojunction models (m=3, 5), the oxygen atoms in the cells were displaced toward the n-type interface and the Ti-centered octahedron structure was compressed along the [001] direction by the atomic reconstructions at the (LaAlO3)m/(SrTiO3)4 interfaces. As a result, the 3dxy orbital of the Ti atom was preferentially occupied due to the lowered energy state of the 3dxy orbital, which arises from the crystal field asymmetry. We reason that the extra electrons occupy the 3dxy orbital are accumulated at the interface by the displacement of the oxygen atoms. This accumulation contributes to the conductivity of the n-type interface. In addition, through a comparison of the atomic displacements and charge accumulation amounts between the two thickness models (m=3, 5), the thickness-dependency of the conductivity can be explained.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.171.2-171.2
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• 2016

The 2-dimensiona electron gas (2DEG) layers have opened tremendous interests in the heterooxide interfaces formed between two insulating materials, especially between LaAlO3 and $SrTiO_3$. The 2DEG layers exhibit extremely high mobility and carrier concentrations along with metallic transport phenomena unlike the constituent oxide materials, i.e., $LaAlO_3$ and $SrTiO_3$. The current work inserted artificially the interfacial layer, $Sr_xCa_{1-x}TiO_3$ between $LaAlO_3$ and $SrTiO_3$, with the aim to controlling the 2-dimensional transports. The insertion of the additional materials affect significantly their corresponding electrical transports. Such features have been probed using DC and AC-based characterizations. In particular, impedance spectroscopy was employed as an AC-based characterization tool. Frequency-dependent impedance spectroscopy have been widely applied to a number of electroceramic materials, such as varistors, MLCCs, solid electrolytes, etc. Impedance spectroscopy provides powerful information on the materials system: i) the simultaneous measurement of conductivity and dielectric constants, ii) systematic identification of electrical origins among bulk-, grain boundary-, and electrode-based responses, and iii) the numerical estimation on the uniformity of the electrical origins. Impedance spectroscopy was applied to the $LaAlO_3/Sr_xCa_{1-x}TiO_3/SrTiO_3$ system, in order to understand the 2-dimensional transports in terms of the interfacial design concepts. The 2-dimensional conduction behavior system is analyzed with special emphasis on the underlying mechanisms. Such approach is discussed towards rational optimization of the 2-dimensional nanoelectronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.366.2-366.2
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• 2014

Impedance spectroscopy allows for simultaneous characterization of interface-controlled materials and/or devices in terms of electrical and dielectric aspects. Recently, there have tremendous interests in 2-dimensional electron gas layers (2DEGs) involving $LaAlO_3$ and $SrTiO_3$ whose features incorporates extremely high mobility and carrier concentrations along with metallic responses unlike the constituents, $LaAlO_3$ and $SrTiO_3$. Impedance spectroscopy offers the following unique features, such as simultaneous determination of conductivity and dielectric constants, identification of electrical origins among bulk-, grain boundary-, and electrode-based responses. Impedance spectroscopy was applied to the 2DEG $LaAlO_3/SrTiO_3$ system, in order to extract the electrical and dielectric information operating in the 2DEG system. The unique responses of the 2DEG system are investigated in terms of temperature and device structures. The underlying mechanism of the 2DEG system is proposed with the aim to optimizing the high-mobility 2DEG responses and to expedite the associated devices towards the high-density integrated chips.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.647-647
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• 1998

(La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures have been grown on LaAlO3 substrates by pulsed laser deposition (PLD) to investigate asymmetric polarization of Pb(Zr,Ti)O3 (PZT) thin flims with different electrode configuration. P-V hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LaCoO3 (LCO_/PZT/LSCO showed a largely asymmetric P-V hystersis loop and large relaxation of the remanent polarization at the negatively poled state, which means that the negatively poled state was unstable. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an interal electric firld inside the PZT layer. It is suggested that internal electric field is caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and CSCO/PZT interfaces were 0.6 V and -0.12 V, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.480-483
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• 2001

Epitaxial rutile-TiO$_2$ and anatase-TiO$_2$ films were grown at 80$0^{\circ}C$ on $Al_2$O$_3$ (1102) and LaAlO$_3$ (001), respectively, using pulsed laser deposition. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also successfully deposited epitaxial rutile-TiO$_2$ and anatase-TiO$_2$ films on conductive RuO$_2$ and La$_{0.5}$Sr$_{0.5}$CoO$_3$ electrodes, respectively Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO$_2$ film grown on RuO$_2$ showed a very broad peak in the visible light region. An epitaxial anatase-TiO$_2$ film grown on La$_{0.5}$Sr$_{0.5}$CoO$_3$ showed a strong peak with a threshold energy of 3.05 eV 3.05 eV

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.480-483
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• 2001

Epitaxial rutile-$TiO_2$ and anatase-$TiO_2$ films were grown at $800^{\circ}C$ on $Al_2O_3$ (1102) and $LaAlO_3$ (001), respectively, using pulsed laser deposition. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also successfully deposited epitaxial rutile-$TiO_2$ and anatase-$TiO_2$ films on conductive $RuO_2$ and $La_{0.5}Sr_{0.5}CoO_{3}$ electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-$TiO_2$ film grown on $RuO_2$ showed a very broad peak in the visible light region. An epitaxial anatase-$TiO_2$ film grown on $La_{0.5}Sr_{0.5}CoO_{3}$ showed a strong peak with a threshold energy of 3.05 eV.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.43-48
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• 2024

The discovery of a two-dimensional electron gas (2DEG) at the interface of LaAlO₃ (LAO) and SrTiO₃ (STO) substrates has sparked significant interest, providing a foundation for cutting-edge research in electronic devices based on complex oxide heterostructures. However, conventional methods for producing LAO thin films, typically employing techniques like pulsed laser deposition (PLD) within physical vapor deposition (PVD), are associated with high costs and challenges in precisely controlling the La and Al composition within LAO. In this study, we adopted a cost-effective alternative approach-solution-based processing-to fabricate LAO thin films and investigated their electrical properties. By adjusting the concentration of the precursor solution, we varied the thickness of LAO films from 2 to 65 nm and determined the sheet resistance and carrier density for each thickness. After vacuum annealing, the sheet resistance of the conductive channel ranged from 0.015 to 0.020 Ω·s^-1, indicating that electron conduction occurs not only at the LAO/STO interface but also into the STO bulk region, consistent with previous studies. These findings demonstrate the successful formation and control of 2DEG through solution-based processing, offering the potential to reduce process costs and broaden the scope of applications in electronic device manufacturing.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.