• Electrical & Electronic Materials
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• v.9 no.4
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• pp.379-384
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• 1996

The microwave dielectric properties of (I-x)CaTiO$_{3}$-xLaAIO$_{3}$ were investigated. The solid solution of (1-x)CaTiO$_{3}$-xLaAIO$_{3}$ had the perovskite structure in the range of all compositions. The crystal system of (1-x)CaTiO$_{3}$-xLaAIO$_{3}$ was transformed to orthorhombic(x.leq.0.4), psudo-cubic(x=0.5), and rhombohedral (x.geq.0.7) in turn, as the amount of LaAIO$_{3}$ increased. The dielectric constant and temperature coefficient of resonant frequency of solid solution were decreased with the content of LaAIO$_{3}$, whereas, the value of Q . f$_{o}$ was increased. The microwave dielectric material having Q . f$_{o}$ = 32, 500, .epsilon.$_{r}$ = 42, and .tau.$_{f}$ = 5 ppm/.deg. C was obtained from the 0.35CaTiO$_{3}$-0.65LaAIO$_{3}$ composition sintered at 1600.deg. C for 4hrs.hrs.hrs.

• Proceedings of the Korean Magnestics Society Conference
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• 2011.06a
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• pp.60-61
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• 2011

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.429-430
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• 2000

• Nuclear Engineering and Technology
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• v.53 no.8
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• pp.2576-2581
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• 2021

The thermal stability and crystallization behaviors of La₂O₃ containing B₂O₃-CaO-Al₂O₃ glass waste forms were investigated to evaluate the stability of waste form during emergencies in deep geological disposal. For glasses containing 15% La₂O₃, LaBO₃ phases were observed as major crystals from 780 ℃ and exhibited needlelike structures. Al, Ca, and O were homogeneously distributed throughout the entire specimen, while some portions of B and La were concentrated in some parts. By differential thermal analysis at various heating rates, the activation energy for grain growth and the crystallization rate of LaBO₃ were calculated to be 12.6 kJ/mol and 199.5 kJ/mol, respectively. These values are comparable to other waste forms being developed for the same purpose.

• Applied Chemistry for Engineering
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• v.10 no.4
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• pp.557-562
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• 1999

The reaction properties of Pd. Pd-Ce and Pd-La catalysts supported on ${\gamma}-Al_2O_3$ were investigated in the oxidation reaction of methane($CH_4$) exhausted from the compressed natural gas vehicle in a U-tube flow reactor with gas hourly space velocity of $72,000h^{-1}$. The catalysts were characterized by X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), BET surface area and hydrogen chemisorption. Pd catalyst prepared by $Pd(NO_3)_2$ as a palladium precursor and calcined at $600^{\circ}C$ showed the highest activity for a methane oxidation. Catalytic activity of calcined $Pd/{\gamma}-Al_2O_3$ in which most of palladium was converted into palladium oxide species was higher than that of reduced $Pd/{\gamma}-Al_2O_3$ in which most of palladium existed in palladium metal by XRD. As increasing the number of reaction cycles in the wide range of redox, the catalytic activity of $Pd/{\gamma}-Al_2O_3$ was decreased and the highly active window became narrower. Lanthanum oxide promoted Pd catalyst, $Pd/La/{\gamma}-Al_2O_3$ showed enhanced thermal stability compared with $Pd/{\gamma}-Al_2O_3$ even after aging at $1000^{\circ}C$, which was ascribed to the role of La as a promoter to suppress the sintering of palladium metal and ${\gamma}-Al_2O_3$ support. Almost all of methane was removed by the reaction with NO at the redox ratio of 1.2 in case of oxygen excluded steam, but that activity was significantly decreased in the steam containing oxygen.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.3-26
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• 1999

We have successfully grown <111>-oriented (La,Sr)(Al,Ta)$O_3$(LSAT) mixed-perovskite single crystals and <0001>-oriented $Ca_8La_2(PO_4)_6O_2$(CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they ar promising as new substrates for the growth of high quality GaN epitaxial layers.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.301-308
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• 2003

Glass-infiltrated alumina, which can be used as an all-ceramic dental crown, was prepared. The glasses in the system of SiO$_2$-B$_2$O$_3$-Al$_2$O$_3$-CaO-La$_2$O$_3$with various amount of $Al_2$O$_3$infiltrated into a porous sintered alumina. The effect of $Al_2$O$_3$on the infiltration characteristics and its mechanical strength were studied. The corrosion of the sintered alumina by infiltrated glasses was prevented by increasing the amount of $Al_2$O$_3$in the glass batches, this increased the bending strength of the glass infiltrated alumina composite. The crack like voids in the sintered alumina was a cause of the deteriorating the mechanical strength of the composite, and this can be eliminated by sintering the alumina at 130$0^{\circ}C$. Glass infiltration under the vacuum atmosphere enhanced the hording strength of the composite up to 453$\pm$31 MPa.

• Applied Microscopy
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• v.51
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• pp.1.1-1.2
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• 2021

We demonstrate a fabrication of an atomically controlled single-crystal heart-shaped nanostructure using a convergent electron beam in a scanning transmission electron microscope. The delicately controlled e-beam enable epitaxial crystallization of perovskite oxide LaAlO₃ grown out of the relative conductive interface (i.e. 2 dimensional electron gas) between amorphous LaAlO₃/crystalline SrTiO₃.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.69-72
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• 2002

B $i_{3.3}$L $a_{0.7}$ $Ti_3$ $O_{12}$(BLT) 강유전체 박막을 $Al_2$ $O_3$/Si 기판위에 졸-겔(sol-gel)법으로 스핀 코팅하여 Metal-Ferroelectric-Insulator-Silicon (MFIS) 구조를 형성하였다. 박막의 결정화를 위해 as-coated 박막을 산소분위기에서 $650^{\circ}C$ 및 $700^{\circ}C$에서 30분 동안 후속열처리를 실시하였다. BLT 박막의 열처리 온도를 $650^{\circ}C$에서 $700^{\circ}C$로 증가시킴에 따라서 c축으로 우선 배향되는 경향을 보였으며, FWHM 값이 감소하여 결정성이 향상됨을 확인할 수 있었다. $700^{\circ}C$에서 열처리된 BLT 박막의 memory window는 약 2.5V (인가전압 5V)를 나타내었으며, 누설전류는 약 1.5x$10^{-7}$ A/$\textrm{cm}^2$를 나타내었다.다.다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.256-256
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• 2008

We report epitaxial growth of ZnO thin films on (100) single-crystalline $LaAlO_3$ (LAO) substrates using pulsed laser deposition (PLD) at different substrate temperatures (400~$800^{\circ}C$). The structural and electrical properties of the films have been investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM), transmission line method (TLM). The poly-crystalline of $\alpha$- and c-axis oriented ZnO film was formed at lower deposition temperature ($T_s$) of $400^{\circ}C$. At higher $T_s$, however, the films exhibit single-crystalline of $\alpha$-axis orientation represented by ZnO[$\bar{1}11$ || LAO <001>. The electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for $\alpha$-axis oriented ZnO films.