• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.23-28
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• 1992

Alumina ceramics was reinforced by in-situ formation of La-${\beta}$-aluminate in ${\alpha}$-alumina matrix. The powder mixture of which composition is (100-12x)Al2O3+x(La2O3+11Al2O3) was prepared for the formation of La-${\beta}$-aluminate in ${\alpha}$-alumina matrix. The amount of La-${\beta}$-aluminate in the matrix was controlled by varing x which is number of moles. The dense composite was produced by sintering at 1600$^{\circ}C$ in air or hot-pressing at 1550$^{\circ}C$ under 30 MPa. Bending strength and fracture toughness were increased, resulting from the grain growth inhibition and the crack deflection and crack bridging mechanism when La-${\beta}$-aluminate was produced in ${\alpha}$-alumina matrix.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.132.2-132
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• 2003

• The Journal of Engineering Research
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• v.3 no.1
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• pp.215-222
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• 1998

The effect of La and Si addition of the thermal stabilization of $\gamma-alumina$ powers have been studied. Reagent grade $La(NO_3)_3{\cdot}6H_2O$ and $Si(OC_2H_5)_4$ were used as starting materials. These additives were introduced by wet impregnation method. Both La and Si additives suppressed the sintering of alumina and were found to be good thermal stabilizers of $\gamma-alumina$. Especially, Si drastically suppressed the phase transition of alumina at high temperatures. The major mechanisms for the thermal stabilization of alumina were seemed to be new phase formation and retardation of surface diffusion by addition of La or Si into alumina matrix.

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.80-80
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• 2007

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.131.1-131
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.34-34
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• 1997

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.436-440
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• 2009

The structural and electrical properties of $Al_2O_3/La_2O_3/Al_2O_3$ (ALA) films using a tunnel oxide annealed at various temperatures were investigated. The program/erase properties of the ALA films using the tunnel oxide annealed at $600^{\circ}C$ were superior to others. The program/erase voltage and time of the ALA films using the tunnel oxide annealed at $600^{\circ}C$ were 11 V for 10 ms (program) and -11 V for 100 ms (erase), respectively, and the corresponding memory window was about 1.59 V. In the retention test, the $V_{th}$ distributions of all films were not changed up to about $10^4$ cycles. In this study, all data showed sufficient characteristics to be used in flash memory devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.2
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• pp.84-88
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• 2021

The change of the photoluminescence properties of La2O3-CaF2-Al2O3-SiO2 glass-ceramics doped with rare earth material, that is used as laser and optical sensors, was analyzed according to heat treatment temperature. The heat treatment conditions for fabricating glass-ceramics were obtained through non-isothermal thermal analysis, and X-ray diffraction analysis was performed to determine the degree of crystal growth and kinds of crystal phases generated according to the heat treatment temperature. Using Scherrer's equation, it was predicted that crystals with a size of 25~40 nm would be generated inside the glass-ceramics. Photoluminescence (PL) analysis showed that the specimens heat-treated at 660℃ to 670℃ for 1 hour had the highest PL intensity. Also, from the CIE color coordinate analysis, all glass-ceramics specimens emitted red-orange light regardless of the heat treatment condition.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.647-647
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• 1998

(La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures have been grown on LaAlO3 substrates by pulsed laser deposition (PLD) to investigate asymmetric polarization of Pb(Zr,Ti)O3 (PZT) thin flims with different electrode configuration. P-V hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LaCoO3 (LCO_/PZT/LSCO showed a largely asymmetric P-V hystersis loop and large relaxation of the remanent polarization at the negatively poled state, which means that the negatively poled state was unstable. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an interal electric firld inside the PZT layer. It is suggested that internal electric field is caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and CSCO/PZT interfaces were 0.6 V and -0.12 V, respectively.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.231-234
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• 1998

LaNiO3 thin films were fabricated on various substrates by spin-coating technique using metal naphthenates as starting materials. Highly-oriented LaNiO3 films with smooth and crack-free surfaces were grown on SrTiO3 (100) and LaAlO3(100) substrates, while films on MgO(100) and Si(100) substrates showed random orientation. In this study, we concluded that lattice-mismatches between LaNiO3 films and substrates used affect film's properties.