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박주동;김지웅;오태성
- 한국진공학회지
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- 제9권4호
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- pp.360-366
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- 2000
LSMCD (Liquid Source Misted Chemical Deposition)공정으로 Sr/Ta몰비 0.35~0.65 조성범위에서 150 nm 두께의 $Sr_xBi_{2.4}Ta_2O_9$ (SBT)박막을 제조하여, Sr/Ta몰비에 따른 결정상과 미세구조, 강유전 특성 및 누설전류 특성을 분석하였다. LSMCD 공정으로 제조한 SBT박막은 Sr/Ta 몰비 0.425의 조성에서 최적의 강유전 특성을 나타내어 $\pm$5 V의 구동전압 인가시 15.01 $\mu$C/$\textrm{cm}^2$의 잔류분극 $2P_{r}$과 41kV/cm의 항전계 $E_{c}$를 나타내었다. LSMCD공정으로 제조한 Sr/Ta 몰비 0.35~0.5 범위의 SBT 박막은 100 kV/cm의 전기장 하에서 $10^{-5}$A/$\textrm{cm}^2$ 미만의 낮은 누설전류 밀도를 나타내었으며, $\pm$5V의 구동전압 인가시 $10^{10}$회의 스위칭 후에도 잔류분극 감소가 1% 미만인 우수한 분극피로 특성을 나타내었다.
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박주동;권용욱;연대중;오태성
- 한국진공학회지
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- 제8권3A호
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- pp.231-237
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- 1999
$SrBi_{22.4}Ta_2O_9$ (SBT) thin films of 70~150 nm thickness were prepared on platinized silicon substrates by Liquid Source Misted Chemical Deposition (LSMCD) process, and their microstructure, feroelectric and leakage current characteristics were investigated. By annealing at $800^{\circ}C$ for 1 hour in oxygen ambient, SBT films were fully crystallized to the Bi layered perovskite structure without preferred orientation. The grain size of the LSMCD- derived SBT films was about 100nm, and was not varied with the film thickness. $2P_r$ and $E_c$ of the SBT films increased with decreasing the film thickness, and the 70nm-thick SBT film exhibited $2P_r$ of 17.8 $\mu$C/$\textrm{cm}^2$ and $E_c$ of 74kV/cm at applied voltage of 5V. Within the film thickness range of 70~150nm, the relative dielectric permittivity of the LSMCD-derived SBT film decreased with decreasing the film thickness. Leakage current densities lower than $10^{-7}\textrm{A/cm}^2$ at 5V were observed in the SBT films thicker than 125nm.
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김길호;우성일;방정식
- 한국전기전자재료학회:학술대회논문집
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- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- pp.307-308
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- 2008
Zinc oxide is a direct band gap wurtzite-type semiconductor with band gap energy of 3.37eV at room temperature. the n-type doped ZnO oxides, B doped ZnO (BZO) is widely studied in TCOs materials as it shows good electrical, optical, and luminescent properties. we focused on the fabrication of B doped ZnO films with glass substrate using the LSMCD at low temperature. And Novel boron-doped ZnO thin films were deposited and characterized from the structural, optical, electrical point of view. The structure, morphology, and optical properties of the films were studied as a function of by employing the XRD, SEM, Hall system and micro Raman system.
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