• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.153-158
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• 2003

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study,$La_{0.5}SR_{0.5}CoO_3$(LSCO) thin films as an electrode material for ferroelectric memories have been prepared by spin coating method using photosensitive sol solution. La-2methoxyethoxide, Sr-ethoxide, Co-2methoxyethoxide were used as starting materials. As UV exposure time to the LSCO gel thin film increased, the UV absorption peak intensity of metal${beta}$-diketonate decreased due to reduced solubility by M(metal)-O-M bond formation. Solubility difference by UV irradiation on LSCO gel thin film allows to obtain a fine patterning of thin film. The LSCO thin films annealed over$680{\circ}C$ in air showed perovskite phase and the lowest resistivity$(4{ imes}10^{-3}{Omega}cm)$ of the thin films were obtained by annealing at$740{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.647-647
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• 1998

(La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures have been grown on LaAlO3 substrates by pulsed laser deposition (PLD) to investigate asymmetric polarization of Pb(Zr,Ti)O3 (PZT) thin flims with different electrode configuration. P-V hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LaCoO3 (LCO_/PZT/LSCO showed a largely asymmetric P-V hystersis loop and large relaxation of the remanent polarization at the negatively poled state, which means that the negatively poled state was unstable. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an interal electric firld inside the PZT layer. It is suggested that internal electric field is caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and CSCO/PZT interfaces were 0.6 V and -0.12 V, respectively.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.13-18
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• 2004

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrodes were prepared on ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) thin films by spin coating method using photosensitive sol-gel solution. Self-patterning technique of photosensitive sol-gel solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. Lanthanum(III) 2-methoxyethoxide, Stronitium diethoxide. Cobalu(II)2-methoxyethoxide were used as starting materials for LSCO electrode. UV irradiation on LSCO thin films lead to decrease solubility by M-O-M bond formation and the solubility difference allows us to obtain self-patternine. There was little composition change of the LSCO thin films between before leaching and after leaching in 2-methoxyethanol. The lowest resistivity of LSCO thin films deposited on $SiO_2$/Si substrate was $1.1{\times}10^{-2}{\Omega}cm$ when the thin film was ennealed at $740^{\circ}C$. The values of Pr/Ps and 2Pr of LSCO/SBT/Pt capacitor on the applied voltage of 5V were 0.51, 8.89 ${\mu}C/cm^2$, respectively.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.425-431
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• 1999

$Pb(Zr_{0.52}, Ti_{0.48})O_3$ (PZT) thick films as an actuating material with conducting oxides, $(La_{0.5}Sr_{0.5}) CoO_3$ (LSCO), have been fabricated by sol-gel method for Optical Micro-Electro-Mechanical System (MEMS) devices, in which PZT/LSCO/SiO2 structures were used. In order to improve the adhesion to LSCO solution in order to enhance the wetting behavior of a water-based LSCO precursor solution and further to improve the adhesion between LSCO and $SiO_2$ layers. PZT films were made using 1-3 propanediol based precursor solution which has a high viscosity and a boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxied and Zr-propoxied are partially substituted with acetylacetone to achieve the solution stability while maintaining reactivity. Crack free PZT films (0.8~1$\mu\textrm{m}$) have been successfully fabricated at crystallization temperatures above $700^{\circ}C$. Dielectric constants and dielectric losses of the PZT films were 900~1200and 2~5%, respectively. Piezoelectric constant $d_{33}$ of the PZT films constrained by a substrate were 200pm/V at 100kV/cm.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.40-40
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.214-214
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• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.

• Progress in Superconductivity and Cryogenics
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• v.23 no.2
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• pp.10-13
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• 2021

Superconductor-ferromagnet thin film heterostructure is an ideal system for studying the interplay between superconductivity and ferromagnetism. These two antagonistic properties combined in thin film heterostructure create interesting proximity effects such as spin-triplet superconductivity. Thin film heterostructure of optimally doped La_2-xSr_xCuO₄(LSCO) cuprate superconductor and SrRuO₃(SRO) ruthenate ferromagnet has been grown by pulsed laser deposition. Its temperature-dependent resistivity and Hall effect measurements show that our LSCO/SRO heterostructure has both superconductivity and ferromagnetism. In the Hall effect measurement results, we find additional hump-like structures appear in the anomalous Hall effect signal in the vicinity of superconducting transition. We conclude that giant magnetoresistance of the LSCO layer distorts the AHE signal, which results in a hump-like structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.116-119
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• 2003

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) and $La_{0.5}Sr_{0.5}CoO_3$(LSCO)thin films have been prepared by spin coating method using photosensitive sol solution. $Sr(OC_2H5)_2$, $Bi(TMHD)_3$ and $Ta(OC_2H)_5)_5$ were used as starting materials for SBT solution and $La(OCH_2CH_2OCH_3)_3$, $Sr(OC_2H_5)_2$, $CO(OCH_2CH_2OCH_3)_2$ were used for LSCO solution. Solubility difference by UV irradiation on LSCO thin film allows to obtain a fine patterning due to M-O-M bond formation. The lowest resistivity($4{\times}10^{-3}{\Omega}cm$) of LSCO thin films was obtained by annealing at $740^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.56-56
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• 2003

BaTiO$_3$, SrTiO$_3$단일막과 BaTiO$_3$ (BTO)/SrTiO$_3$ (STO) 산화물 인공격자를 pulsed laser deposition (PLD) 법에 의해서 100 nm 두께의 (La,Sr)CoO3 (LSCO) 산화물 전극이 코핑된 MgO 단결정 기판 위에 증착시켰다. 이러한 기판위에서 2 unit cell의 적층 두께를 갖는 BTO/STO 초격자 (=BTO2/STO2)를 100～5 nm까지 변화시켰다. 또한 BTO와 STO 단일막도 같은 두께로 변화시켰다. 이러한 두께 범위에서 BTO, STO 단일막과 초격자의 격자변형에 따른 유전특성을 살펴 보았다. 두께 변화에 따른 단일막과 초격자의 구조 분석은 포항 방사광 가속기의 x-ray 회절에 의해서 이루어졌다. 다양한 두께를 갖는 BTO2/STO2 초격자에서 BTO와 STO 충은 in-plane 방향으로 격자정합을 유지하면서 변형되었다. 두께가 얇아지면서 하부 LSCO영향으로 BTO, STO의 n-plane 격자상수는 LSCO 격자상수 쪽으로 접근하였다. Out-of-plane 방향의 BTO 격자상수는 두께가 얇아지면서 증가하였고 반면에 STO 격자상수는 감소하였다. STO와 BTO 단일막의 격자변형은 두께가 얇아지면서 in-plane 방향으로 압축응력으로 인해 증가하였다. 그러나, 격자부정합도가 큰 BTO격자에서 더 많이 변형되었다. 또한 초격자에서 BTO격자가 BTO 단일막보다 더 많이 변형되었는데 초격자에서는 BTO, STO 두 층의 발달된 변형뿐만 아니라 하부 LSCO/MgO 기판의 영향을 함께 받고 있기 때문이다. 초격자와 단일막의 유전상수를 살펴보면은 두께가 감소하면서 유전상수가 감소하는 size effect을 보이고 있다. 하지만 초격자에서의 유전상수가 단일막보다 우수한 유전특성을 보이고 있다. 이러한 결과로 볼 때 격자변형이 size effect 영향을 끼치는 중요한 요소임을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1070-1077
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• 1998

Effect of current collecting layer on the cathode was characterized by AC impedance spectroscopy at 800$^{\circ}C$ under flowing air. LSM-YSZ composite cathode showed lower polarization resistance due to the in-crease of triple phase (LSM/YSZ/Pore) boundary length by incorporation of YSZ. Ohmic resistance {{{{ {R }_{1 } }} of LSM-YSZ was higher than that of pure LSM however because in-plane resistance of the cathode was fair-ly high due to its high specific resistivity. To reduce the in-plane resistance of LSM-YSZ cathode cathode side current collecting layer was required. Ohmic resistance {{{{ {R }_{1 } }} was reduced after forming LSM current col-lecting layer on the LSM-YSZ cathode. In case of pure LSM cathode the formation of Pt, or LSCO current collecting layer reduced polarization resistance {{{{ {R }_{p } }} but ohmic resistance {{{{ {R }_{1 } }} was relatively constant. After annealing of LSM cathode with Pt current collector at higher temperature polarization resistance {{{{ {R }_{p } }} was in-creased but ohmic resistance {{{{ {R }_{1 } }} was constant. These phenomena indicate that Pt or LSCo current col-lecting layers act as a catalytic layer for oxygen reduction of pure LSM cathode. LSCO current collector was effective in reducing the ohmic and polarization resistance of LSM-YSZ cathode.