• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.25-33
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• 2007

In this paper, the high isolation and wideband 94 GHz MIMIC(Millimeter-wave Monolithic Integrated Circuit) single balanced cascode mixer was designed and fabricated. Also, we designed and fabricated a 3 dB tandem coupler which has a high isolation and wideband characteristic. The single balanced resistive mixer which does not require an external IF balun was designed using the 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT's are 665 mA/mm of drain current density, 691 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 189 GHz and the maximum oscillation frequency($f_{max}$) is 334 GHz. A 94 GHz single balanced cascode mixer was fabricated using our 0.1 ${\mu}m$ MHEMT MIMIC process. From the measurements, the fabricated couplers showed wideband characteristics. The conversion loss of single balanced cascode mixer was 9.8 dB at an LO power of 10.9 dBm. The LO to RF isolation of single balanced cascode mixer was 29.5 dB at 94 GHz. We obtained in this study a higher LO-RF isolation compared to some other single balanced mixers.

• Journal of information and communication convergence engineering
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• v.14 no.1
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• pp.35-39
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• 2016

In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.6
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• pp.514-520
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• 2002

In this paper, the study of a design and fabrication of the receiver MMIC mixer for L-band application is described. The mixer is composed of active LO and RF balun to integrate on a chip and applied a newly proposed bias circuit to compensate the process variations of active devices. The conversion gain of the mixer is -14 dB, IIP3 is approximately 4 dBm and port-to-port isolation is over 25 dB. The newly proposed bias circuit is composed of a few FETs and resistors, and can compensate the variation of the threshold voltage by the process variations, temperature changes and etc. The designed chip size is $1.4\;mm{\times}1.4\;mm$.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.15-20
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• 2000

We demonstrated a single balanced mixer of the combination of high-T. superconductor (HTS) and III-V GaAs beam lead Schottky diodes operating in the mini-cryogenic chamber. The HTS hybrid mixer was designed with a center frequency of 27.5 GHz and a bandwidth of 1 GHz, and consisted of a rat-race coupler circuit with beam-lead diodes attached to its balanced ports. The HTS hybrid mixer with 1 GHz RF bandwidths exhibits a conversion loss of 6 dB. A LO-to-RF isolation was greater than 40 dB in the range of operating frequencies. Since the HTS/III-V hybrid mixer devices have lower noise and conversion loss, this technique provide us with new capabilities that can be effectively utilized in the field of local-point distribution service (LMDS) systems.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.1
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• pp.110-115
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• 2000

A K-band GaAs MMIC receiver module has been developed using 0.15 ${\mu}{\textrm}{m}$ HEMT technology process. It incorporates two front end low noise amplifiers, a double balanced diode mixer, and filters. The RF input frequency ranges 20.1 to 21 GHz and the IF output 1.1 to 2 GHz. Test results show an overall conversion gain of more than 27 dB, and less than a 2.2 dB noise figure. The image-rejection ratio greater than 21 dB has been obtained. The isolation between RF and IF ports is better than 27 dB, and between LO and IF is more than 50 dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.5
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• pp.197-203
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• 2003

In this paper, we have presented millimeter-wave high conversion gain quadruple subharmonic mixers adopting the cascode harmonic generator The subharmonic mixers were successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs pseudomorphic HEMTs(PHEMTs) and coplanar waveguide(CPW) structures. Measured output of 1st, 2nd and 4th harmonics of the fabricated cascode 4th harmonic generator are -21.42 dBm, -32.65 dBm and -13.45 dBm, respectively, for an input power of 10 dBm at 14.5 GHz. We showed that the highest conversion gain of 3.4 dB has obtained thus far at a LO power of 13 dBm from the fabricated subharmonic mixers. The millimeter-wave subharmonic mixer also ensure a high degree of isolation showing -53.6 dB in the LO-to-IF and -46.2 dB in the LO-to-RF, respectively, at a frequency of 14.5 GHz. The high conversion gain achieved in this work is the first report among the millimeter-wave subharmonic mixers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.11 s.102
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• pp.1114-1122
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• 2005

In this paper, the study of a design, fabrication and measurement of the receiver MMIC LNA, mixer for S-band application is described. The LNA is designed by 2-stage common source. The mixer is composed of active LO and RF balun to integrate on a chip and applied a newly proposed bias circuit to compensate the process variations of active devices. The LNA has 15.51 dB-gain and 1.02dB-Noise Figure at 2.1 GHz. The conversion gain of the mixer is -12 dB, IIP3 is approximately 4.25 dBm and port-to-port isolation is over 25 dB. The newly proposed bias circuit is composed of a few FETs and resistors, and can compensate the variation of the threshold voltage by the process variations, temperature changes and etc. The designed chip size is $1.2[mm]\times1.4[mm]$.

• Journal of IKEEE
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• v.2 no.1 s.2
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• pp.1-14
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• 1998

In this paper, Antenna, LNA, Mixer, VCO, and Modulation/Demodulation in Baseband processor which are the RF main components in Wireless LAN system for ultra high-speed communications network are studied. Antenna bandwidth and selective fading due to multipath can be major obstacles in high speed digital communications. To solve this problem, wide band MSA which has loop-structure magnetic antenna characteristics is designed. Distributed mixer using dual-gate GaAs MESFET can achieve over 10dB LO/RF isolation without hybrid, and minimize circuit size. As linear mixing signal is produced, distortions can be decreased at baseband signals. Conversion gain is achieved by mixing and amplification simultaneously. Mixer is designed to have wide band characteristics using distributed amplifier. In VCO design, Oscillator design method by large signal analysis is used to produce stable signal. Modulation/Demodulation system in baseband processor, DS/SS technique which is robust against noise and interference is used to eliminate the effect of multipath propagation. DQPSK modulation technique with M-sequences for wideband PN spreading signals is adopted because of BER characteristic and high speed digital signal transmission.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.339-342
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• 2004

본 논문은 밀리미터파 대역 무선통신 시스템 송신부의 응용을 위해 CPW 구조를 이용하여 V-band용 상향 주파수 혼합기와 2단 구동증폭기를 설계$\cdot$제작하였다. 능동소자는 본 연구실에서 제작한 $0.1{\mu}m$ 게이트 GaAs Pseudomorphic HEMTs(PHEMTs)를 사용하였으며 입$\cdot$출력단은 CPW를 사용해 정합 회로를 설계하였다. 제작된 상향 주파수 혼합기는 LO power 5.4 dBm, 2.4 GHz IF 신호를 -10.25 dBm으로 입력하였을 때 Conversion Loss 1.25 dB, LO-to-RF Isolation은 58 GHz에서 13.2 dB의 특성을 나타내었다 2단 구동 증폭기는 측정결과 60 GHz에서 S21 이득 13 dB, $58\;GHz\;\~\;64\;GHz$ 대역에서 S21 이득 12 dB 이상을 유지하는 광대역 특성을 얻었고 증폭기의 Pl dB는 3.8 dBm, 최대 출력전력은 6.5 dBm의 특성을 얻었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.670-680
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• 2010

A low power single-chip CMOS receiver for 60 GHz mobile application are proposed in this paper. The single-chip receiver consists of a 4-stage current re-use LNA with under 4 dB NF, Cgs compensating resistive mixer with -9.4 dB conversion gain, Ka-band low phase noise VCO with -113 dBc/Hz phase noise at 1 MHz offset from 26.89 GHz, high-suppression frequency doubler with -0.45 dB conversion gain, and 2-stage current re-use drive amplifier. The size of the fabricated receiver using a standard 0.13 ${\mu}m$ CMOS technology is 2.67 mm$\times$0.75 mm including probing pads. An RF bandwidth is 6.2 GHz, from 55 to 61.2 GHz and an LO tuning range is 7.14 GHz, from 48.45 GHz to 55.59 GHz. The If bandwidth is 5.25 GHz(4.75~10 GHz) The conversion gain and input P1 dB are -9.5 dB and -12.5 dBm, respectively, at RF frequency of 59 GHz. The proposed single-chip receiver describes very good noise performances and linearity with very low DC power consumption of only 21.9 mW.