• Journal of the Korean institute of surface engineering
• /
• v.48 no.5
• /
• pp.211-217
• /
• 2015

To fabricate white LED having a high color rendering index value, red color phosphor mixed with the green color phosphor together in the blue chip, namely the blue chips with RG phosphors packaging is most favorable for high power white LEDs. In our previous papers, we reported on successful syntheses of $Sr_{2-}$ $Si_5N_8:Eu^{2+}$ and $CaAlSiN_3$ phosphors for red phosphor. In this work, for high power green phosphor, greenemitting ternary nitride $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphor was synthesized in a high frequency induction furnace under $N_2$ gas atmosphere at temperatures up to $1400^{\circ}C$ using $EuF_3$ as a raw material for $Eu^{2+}$ dopant. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 250 - 500 nm, namely from UV to blue region with distinct enhanced emission spectrum peaking at ${\approx}530nm$.

• ETRI Journal
• /
• v.46 no.2
• /
• pp.347-359
• /
• 2024

A simultaneous transfer and bonding (SITRAB) process using areal laser irradiation is introduced for high-yield and cost-effective production of mini- or micro-light-emitting diode (LED) display panels. SITRAB materials are special epoxy-based solvent-free pastes. Three types of pot life are studied to obtain a convenient SITRAB process: Room temperature pot life (RPL), stage pot life (SPL), and laser pot life (LPL). In this study, the RPL was found to be 1.2 times the starting viscosity at 25℃, and the SPL was defined as the time the solder can be wetted by the SITRAB paste at given stage temperatures of 80℃, 90℃, and 100℃. The LPL, on the other hand, was referred to as the number of areal laser irradiations for the tiling process for red, green, and blue LEDs at the given stage temperatures. The process windows of SPL and LPL were identified based on their critical time and conversion requirements for good solder wetting. The measured RPL and SPL at the stage temperature of 80℃ were 6 days and 8 h, respectively, and the LPL was more than six at these stage temperatures.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.3 s.32
• /
• pp.37-45
• /
• 2004

Electroless Ni(P) has been widely used for under bump metallization (UBM) of flip chip and surface finish layer in microelectronic packaging because of its excellent solderability, corrosion resistance, uniformity, selective deposition without photo-lithography, and also good diffusion barrier. However, the brittle fracture at solder joints and the spatting of intermetallic compound (IMC) associated with electroless Ni(P) are critical issues for its successful applications. In the present study, the mechanism of IMC spatting and microstructure change of the Ni(P) film were investigated with varying P content in the Ni(P) film (4.6,9, and $13 wt.\%$P). A reaction between Sn penetrated through the channels among $Ni_3Sn_4$ IMCs and the P-rich layer ($Ni_3P$) of the Ni(P) film formed a $Ni_3SnP$ layer. Thickening of the $Ni_3SnP$ layer led to $Ni_3Sn_4$ spatting. After $Ni_3Sn_4$ spatting, the Ni(P) film directly contacted the molten solder and the $Ni_3P$ phase further transformed into a $Ni_2P$ phase. During the crystallization process, some cracks formed in the Ni(P) film to release tensile stress accumulated from volume shrinkage of the film.

• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.4
• /
• pp.49-53
• /
• 2011

High-speed Cu filling into a through-silicon-via (TSV) and simplification of bumping process by electroplating for three dimensional stacking of Si dice were investigated. The TSV was prepared on a Si wafer by deep reactive ion etching, and $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to increase the filling rate of Cu into the via, a periodic-pulse-reverse wave current was applied to the Si chip during electroplating. In the bumping process, Sn-3.5Ag bumping was performed on the Cu plugs without lithography process. After electroplating, the cross sections of the vias and appearance of the bumps were observed by using a field emission scanning electron microscope. As a result, voids in the Cu-plugs were produced by via blocking around via opening and at the middle of the via when the vias were plated for 60 min at -9.66 $mA/cm^2$ and -7.71 $mA/cm^2$, respectively. The Cu plug with a void or a defect led to the production of imperfect Sn-Ag bump which was formed on the Cu-plug.

• Journal of the Microelectronics and Packaging Society
• /
• v.10 no.3
• /
• pp.29-35
• /
• 2003

The Sn-based lead-free solders with varying microstructure were prepared by changing the cooling rate from the melt. Bulky as-cast SnAg, SnAgCu, and SnCu, alloys were cold rolled and thermally stabilized before the creep tests so that there would be very small amount of microstructural change during creep (TS), and thin specimens were water quenched from the melt (WQ) to simulate microstructures of the as-reflowed solders in flip chips. Cooling rates of the WQ specimens were 140∼150 K/sec, and the resultant $\beta-Sn$ globule size was 5∼10 times smaller than that of the TS specimens. Subsequent creep tests showed that the minimum strain rate of TS specimens was about $10_2$ times higher than that of the WQ specimens. Fractographic analyses showed that creep rupture of the TS-SnAgCu specimens occurred by the nucleation of voids on the $Ag_3Sn$ Sn or $Cu_6Sn_5$ particles in the matrix, their subsequent growth by the power-law creep, and inter-linkage of microcracks to form macrocracks which led to the fast failure. On the other hand, no creep voids were found in the WQ specimens due to the mode III shear rupture coming from the thin specimens geometry.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.26 no.1
• /
• pp.14-18
• /
• 2016

A novel $Ce^{3+}$ doped $(Ce_xLu_{1-x})_3MgAl_3SiO_{12}$ phosphor was successfully synthesized by a conventional solid-state reaction. Heat-treatment temperature was controlled from 1250 to $1550^{\circ}C$ for 5 h. XRD and PL properties were analyzed for the optimum heat-treatment condition. Ce doping concentration was varied from 2.0 to 10.0 mol% for the optimum Ce doping concentration. The PL intensity, peak wavelength and FWHM were calculated with the Ce doping concentration, and evaluated for the application to LED packaging. Particle size and morphology were also characterized for synthesized phosphor sample at optimum heat-temperature and Ce doping concentration.

• Journal of the Korean Institute of Landscape Architecture
• /
• v.34 no.2 s.115
• /
• pp.72-79
• /
• 2006

Integrated CI (country identity, community identity) planning is necessary for establishing identity and a distinct image as well as for managing green tourism villages. In addition, CI planning will be helpful for improving and advertising a village's image, capitalizing on its specialties and attracting many visitors to the village. Therefore, this study mainly intended to plan and design integrated CI for a green tourism village. For this purpose, this study selected Hari village in Hongsung-Kun, Chungnam province, which the Ministry of Agriculture and Forestry designated as a green tourism village in 2003. Twenty CI alternatives were developed, and a vote was conducted with 143 visitors and rural residents attending a village festival in 2004. This study resulted in a new brand-name, 'Hanuri,' and developed symbols, logotypes, distinctive colors, signature system as a basic system and name cards, packaging materials, and signs for use. Above all, this study led the residents to pursue a village identity, village image and community spirit, which can be an effective management strategy to create a distinct image in a green tourism village.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.1
• /
• pp.45-50
• /
• 2014

Effects of wet chemical treatment and thermal cycle conditions on the quantitative interfacial adhesion energy of $Cu/SiN_x$ thin film interfaces were evaluated by 4-point bending test method. The test samples were cleaned by chemical treatment after Cu chemical-mechanical polishing (CMP). The thermal cycle test between Cu and $SiN_x$ capping layer was experimented at the temperature, -45 to $175^{\circ}C$ for 250 cycles. The measured interfacial adhesion energy increased from 10.57 to $14.87J/m^2$ after surface chemical treatment. After 250 thermal cycles, the interfacial adhesion energy decreased to $5.64J/m^2$ and $7.34J/m^2$ for without chemical treatment and with chemical treatment, respectively. The delaminated interfaces were confirmed as $Cu/SiN_x$ interface by using the scanning electron microscope and energy dispersive spectroscopy. From X-ray photoelectron spectroscopy analysis results, the relative Cu oxide amounts between $SiN_x$ and Cu decreased by chemical treatment and increased after thermal cycle. The thermal stress due to the mismatch of thermal expansion coefficient during thermal cycle seemed to weaken the $Cu/SiN_x$ interface adhesion, which led to increased CuO amounts at Cu film surface.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
• /
• v.20 no.3
• /
• pp.85-89
• /
• 2014

TTI is a small label of which the color changes by time-temperature history during food storage. The food shelf life (SL) was compared with that of TTI, the time for TTI to reach the end-point of its color change, for the various discrepancies in two Arrhenius activation energies (Ea), an important parameter of temperature dependence. The SL of TTI and food were mathematically simulated, based on zero-order and first-order kinetics, respectively. In the case Ea of food was smaller than that of TTI, the SL of food was larger than that of TTI, meaning TTI reaches the end-point of color change earlier even though food is still fresh. In the case of Ea of food > Ea of TTI, the food reaches the SL earlier than the TTI. In addition, the magnitude of ${\Delta}Ea$ between food and TTI led to the bigger ${\Delta}SL$. To be safe, $SL_{Food}$ > $SL_{TTI}$ would be practical although $SL_{Food}{\fallingdotseq}SL_{TTI}$ is ideal.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.4 s.37
• /
• pp.289-299
• /
• 2005

The ball shear force was investigated in terms of test parameters, i.e. displacement rate and probe height, with an experimental and non-linear finite element analysis for evaluation of the solder joint integrity in area array packages. The increase in the displacement rate and the decrease in the probe height led to the increase in the shear force. Excessive probe height could cause some detrimental effects on the test results such as unexpected high standard deviation and probe sliding from the solder ball surface. The low shear height conditions were favorable for assessing the mechanical integrity of the solder joints. The mechanical and electrical properties of the Sn-37Pb/Cu and Sn-3.5Ag/Cu BGA solder joints were also investigated with the number of reflows. The total thickness of the intermetallic compound (IMC) layers, consisting of Cu6Sn5 and Cu3Sn, was increased as a function of cubic root of reflow time. The shear force was increased up to 3 or 4 reflows, and then was decreased with the number of reflows. The fracture occurred along the bulk solder, in irrespective of the number of reflows. The electrical resistivity was increased with increasing the number of reflows.