• Current Optics and Photonics
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• 제5권2호
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• pp.173-179
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• 2021

The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.

• Current Optics and Photonics
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• 제3권2호
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• pp.164-171
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• 2019

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

• 한국재료학회지
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• 제32권6호
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• pp.293-300
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• 2022

This study investigated a graded-refractive-index (GRIN) coating pattern capable of improving the light extraction efficiency of GaN light-emitting diodes (LEDs). The planar LEDs had total internal reflection thanks to the large difference in refractive index between the LED semiconductor and the surrounding medium (air). The main goal of this paper was to reduce the trapped light inside the LED by controlling the refractive index using various compositions of (TiO₂)_x(SiO₂)_1-x in GRIN LEDs consisting of five dielectric layers. Several types of multilayer LEDs were simulated and it was determined the transmittance value of the LEDs with many layers was greater than the LEDs with less layers. Then, the specific ranges of incident angles of the individual layers which depend on the refractive index were evaluated. According to theoretical calculations, the light extraction efficiency (LEE) of the five-layer GRIN is 25.29 %, 28.54 % and 30.22 %, respectively. Consequently, the five-layer GRIN LEDs patterned enhancement outcome LEE over the reference planar LEDs. The results suggest the increased light extraction efficiency is related to the loss of Fresnel transmission and the release of the light mode trapped inside the LED chip by the graded-refractive-index.

• Journal of information and communication convergence engineering
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• 제19권4호
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• pp.269-275
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• 2021

Light-emitting diodes (LEDs) are modulated using a square wave pulse sequence for flicker prevention and dimming control in visible light communication (VLC). In a VLC transmitter, the high and low bits of the non-return-to-zero (NRZ) data are converted to two square waves of different frequencies, which continue for a finite time defined by the fill ratio in an NRZ bit time. As the average optical power was kept constant and independent of data transmission, the LED was flicker-free. Dimming control is carried out by changing the fill ratio of the square wave in the NRZ bit time. In the experiments, the illumination of the LED light was controlled in the range of approximately 19.2% to 96.2% of the continuous square wave modulated LED light. In the VLC receiver, a high-pass filter combined with a latch circuit was used to recover the transmitted signal while preventing noise interference from adjacent lighting lamps.

• Ocean and Polar Research
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• 제39권2호
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• pp.107-114
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• 2017

In this study, we investigated the effects of light spectra on physiology stress and DNA damage in juvenile rock bream (Oplegnathus fasciatus) using light-emitting diodes (LEDs; green, 520 nm; red, 630 nm) at two intensities (0.25 and $0.5W/m^2$ ) with application of thermal stress (25 and $30^{\circ}C$). We measured the mRNA expression of heat shock protein 70 (HSP70) and the levels of plasma cortisol, glucose, aspartate aminotransferase (AspAT), and alanine aminotransferase (AlaAT). Additionally, DNA damage was measured using comet assays. Our findings showed that HSP70 mRNA expression and plasma cortisol, glucose, AspAT, and AlaAT levels were significantly higher after exposure to high temperatures and were significantly lower after exposure to green LED light. Thus, although high water temperatures induced stress in juvenile rock bream, green LED light inhibited stress. In particular, green LED light reduced stress and DNA damage to a greater degree than other light sources.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.23.2-23.2
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• 2011

This presentation will include an overview of III-Nitride LED technology, applications, key areas for future improvements, challenges such as efficiency droop. GaN-based high-power light-emitting diodes (LEDs) suffer from high-current loss mechanisms that lead to a significant decrease in internal quantum efficiency at high drive currents, a well-known phenomenon commonly referred to as efficiency droop. Although many attempts have been made to uncover this LED's darkest secret, there is still a lack of consensus on the dominant mechanism responsible for this detrimental phenomenon. In this presentation, proposed origins and corresponding solutions to the droop-causing mechanisms will be reviewed and discussed.

• 대한환경공학회지
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• 제34권8호
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• pp.523-527
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• 2012

본 연구는 담수미세조류의 일종인 클로렐라를 적색 발광다이오드를 이용하여 효율적으로 반연속 배양하기 위한 조건을 찾기 위해 수행되었다. 클로렐라 배양에 가장 효율적인 적색 LED를 사용하여 반연속배양을 실시하였으며, 배양 중 인과 질소가 급격히 감소하였으며 이는 클로렐라의 성장과 반비례의 관계를 보여 주었다. 효율적인 반연속 배양을 위해 인과 질소의 농도를 증가시킨 배지를 사용하여 배지교체 주기를 연장시켜 배양 효율성을 높였다. 배지교체 시 클로렐라의 셀 농도는 지속적으로 증가하였으나, 셀 크기는 감소하였다. 셀 농도와 셀 크기를 고려할 때 배양 전과정을 통해 생산되는 바이오매스의 양은 일정하게 유지되었다.

• 한국재료학회지
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• 제21권5호
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• Journal of Information Display
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• 제8권3호
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• pp.1-4
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• 2007

The influence of a silane layer on the performances of polymer light emitting diode(pLED)s has been studied. Glycidoxypropyltrimethoxysilane(GPS) with an epoxy functional group was used as a surface modifier for ITO substrates. The GPS layer was inserted between an ITO and a poly(3,4)-ethylenedioxythiophene/polystyrenesulfonate(PEDOT) by wet process and the performances of PLEDs were investigated. The introduction of GPS layer increased the brightness and efficiency of PLEDs by 30%. In addition, the lifetime of PLEDs was also improved considerably by using GPS as a surface modifier.

• 전기전자학회논문지
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• 제27권1호
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• pp.30-37
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• 2023

양자점 발광 다이오드(QD-LED)의 효율과 안정성 향상을 위해서 QD 발광층에 주입되는 전하의 균형을 이루는 것은 필수이다. 산화 아연(ZnO)은 최신 QD-LED에서 전자수송층(electron transport layer, ETL)을 구성하기 위해 가장 많이 사용되고 있으나, ZnO의 자발적인 전자 주입은 QD-LED의 성능을 크게 열화시키는 과도한 전자 주입을 유발한다. 본 연구에서는 자기조립단분자막(self-assembled monolayer, SAM) 처리를 통해 ZnO의 전자 주입 특성을 조절하여 QD-LED의 성능을 향상시켰다. 전하 균형도를 향상시킨 결과, SAM을 처리한 QD-LED는 SAM을 처리 안한 소자와 비교하여 내부 양자 효율(external quantum efficiency, EQE)이 25%, 최대 휘도는 200% 향상되었다.